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Patent # Description
US-9,564,334 Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device includes forming a device structure in a surface of a semiconductor substrate, forming, in a face of the...
US-9,564,333 Method for forming a metal silicide using a solution containing gold ions and fluorine ions
A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: exposing the...
US-9,564,332 Mechanism for forming metal gate structure
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a metal gate stack...
US-9,564,331 Apparatus and method for rounded ONO formation in a flash memory device
A method and apparatus for continuously rounded charge trapping layer formation in a flash memory device. The memory device includes a semiconductor layer,...
US-9,564,330 Normally-off enhancement-mode MISFET
The present disclosure relates to an enhancement mode MISFET device. In some embodiments, the MISFET device has an electron supply layer located on top of a...
US-9,564,329 Method and apparatus for fabricating dielectric structures
A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy...
US-9,564,328 Method for fabricating a template of conductors on a substrate by means of block copolymers
The method for fabricating patterns made from first material having: providing a substrate covered by a covering layer, forming a first mask by means of a...
US-9,564,327 Method for forming line end space structure using trimmed photo resist
One or more techniques or systems for forming a line end space structure are provided herein. In some embodiments, a first patterned second hard mask (HM)...
US-9,564,326 Lithography using interface reaction
A method of forming a semiconductor structure by; forming a first mask trench in a first mask, where the first mask is on a substrate; forming a second mask in...
US-9,564,325 Methods of fabricating a semiconductor device
A method for fabricating a semiconductor device is provided. In the method, a first hard mask layer is formed on a stepped structure. The first hard mask layer...
US-9,564,324 Methods of forming a pattern and devices formed by the same
The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure...
US-9,564,323 Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field...
US-9,564,322 Method of excimer laser annealing
A method of excimer laser annealing includes generating a focused long line beam with a laser beam output from at least one laser source; and scanning the long...
US-9,564,321 Cyclic epitaxial deposition and etch processes
A cyclic deposition and etch method is provided. The method includes depositing an epitaxial layer over a substrate at a first temperature and etching a portion...
US-9,564,320 Large area nitride crystal and method for making it
Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed....
US-9,564,319 Method of fabricating transient semiconductor based on single-wall nanotube
A method of fabricating a transient semiconductor based on a single-wall nanotube includes stacking a thermal oxide layer on a silicon substrate and depositing...
US-9,564,318 Method of manufacturing nanowire array using induced growth
Provided is a method of manufacturing a nanowire array using induced growth, in which a nitride inorganic nanowire is grown from a nitride seed by forming the...
US-9,564,317 Method of forming a nanowire
A method of fabricating a semiconductor device is disclosed. The method includes forming a first material layer over a substrate. The first material layer has a...
US-9,564,316 Method of manufacturing semiconductor device and method of maintaining deposition apparatus
A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al)...
US-9,564,315 Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer
A manufacturing method for manufacturing a silicon carbide epitaxial wafer includes: introducing a cleaning gas into a growth furnace to remove dendrite-like...
US-9,564,314 Methods for forming doped silicon oxide thin films
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments,...
US-9,564,312 Selective inhibition in atomic layer deposition of silicon-containing films
Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves...
US-9,564,311 Method of depositing thin film
A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a...
US-9,564,310 Metal-insulator-metal capacitor fabrication with unitary sputtering process
A method for the formation of a MIM capacitor on a substrate is described. Initially, a target comprising a metal is sputtered in the presence of nitrogen to...
US-9,564,309 Si precursors for deposition of SiN at low temperatures
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise...
US-9,564,308 Methods for processing bevel edge etching
The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber...
US-9,564,307 Constraining arcuate divergence in an ion mirror mass analyser
A charged particle analyzer apparatus comprising two opposing ion mirrors each mirror comprising inner and outer field-defining electrode systems elongated...
US-9,564,306 Mass spectrometer with improved magnetic sector
The present invention relates to a compact and portable mass spectrometer device comprising a source of ions, a non-scanning magnetic sector for separating ions...
US-9,564,305 Ion funnel for efficient transmission of low mass-to-charge ratio ions with reduced gas flow at the exit
A sample inlet device and methods for use of the sample inlet device are described that include an ion funnel having a plurality of electrodes with apertures...
US-9,564,304 Ion trap mass analyzer apparatus, methods, and systems utilizing one or more multiple potential ion guide...
In one aspect of the invention, an ion trap mass analyzer includes a variable- or multi-potential type ion guide (MPIG) assembly which has been pre-configured...
US-9,564,303 Maldi support with magnetically held spring steel plate
The invention relates to a low-cost spring steel plate as the sample support on a dimensionally stable and precisely shaped substructure, machined from an...
US-9,564,302 Contamination filter for mass spectrometer
Methods and systems for performing mass spectrometry are provided herein. In accordance with various aspects of the applicants' teachings, the methods and...
US-9,564,301 Setting ion detector gain using ion area
A control system and method of determining a signal to noise (S/N) ratio of an ion detector system, including an ion detector, electron multiplier or...
US-9,564,300 Centering of a plate in a holder both at room temperatures and at higher temperatures
A system that has a plate with a holder, in which the plate is centered in the holder both at room temperatures and at higher temperatures, independently of the...
US-9,564,299 Methods of manufacturing large-area sputtering targets using interlocking joints
In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
US-9,564,298 Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the same
A semiconductor manufacturing apparatus may include a chamber accommodating a substrate to be processed, a first electrode providing electric field in the...
US-9,564,297 Electron beam plasma source with remote radical source
In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process...
US-9,564,296 Radial waveguide systems and methods for post-match control of microwaves
A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first...
US-9,564,295 Diagnosis system for pulsed plasma
A diagnosis system for pulsed plasma includes an optical emission sensor (OES) to receive light generated the pulsed plasma, the pulsed plasma having been...
US-9,564,294 Plasma treatment apparatus and plasma antenna
According to one embodiment of the present invention, a plasma treatment apparatus comprises: a chamber having an inner space in which processes for an object...
US-9,564,293 Charged particle beam writing apparatus, and buffer memory data storage method
A charged particle beam writing apparatus includes a buffer memory including a memory region capable of contemporarily storing writing data for data processing...
US-9,564,292 Ion beam measuring device and method of measuring ion beam
An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y...
US-9,564,291 Hybrid charged-particle beam and light beam microscopy
A charged-particle beam microscope is provided for imaging a sample. The microscope has a stage to hold a sample and a charged-particle beam column to direct a...
US-9,564,290 Micro machined two dimensional faraday collector grid
A system for detecting particles in a gas stream comprises a Faraday collector separating charged particles into positive and negative streams to be detected....
US-9,564,289 Ion implanter and method of controlling the same
An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power...
US-9,564,288 Sample storage container, charged particle beam apparatus, and image acquiring method
A sample storage container of the present invention includes: a storage container (100) that stores a sample (6) under an atmosphere different from an...
US-9,564,287 Substrate processing apparatus and substrate processing method using same
A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate,...
US-9,564,286 Method of forming thin film of semiconductor device
Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a...
US-9,564,285 Hybrid feature etching and bevel etching systems
A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing...
US-9,564,284 Anode having a linear main extension direction
An anode with a linear main direction of extent for an x-ray device, has an anode body and a focal track layer, which is connected to the anode body in a...
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