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| Patent # | Description |
|---|---|
| US-9,653,752 |
Secondary battery, battery pack, electric vehicle, electric power storage
system, electric power tool, and... A secondary battery includes: a cathode; an anode; and a gel electrolyte. The gel electrolyte includes an electrolytic solution and a polymer compound. The... |
| US-9,653,743 |
Method and apparatus for detecting defects of fuel cell membrane-electrode
assembly Disclosed herein is a method of detecting defects of a fuel cell membrane-electrode assembly which comprises a gas diffusion layer, a catalyst layer and an... |
| US-9,653,739 |
Electrical connection material for solid oxide fuel cell, solid oxide fuel
cell, solid oxide fuel cell module,... A method for manufacturing solid oxide fuel cells, which includes preparing an electrical connection material, preparing a stacked body by stacking a plurality... |
| US-9,653,737 |
Co-deposition of conductive material at the diffusion media/plate
interface A method of depositing a conductive material is described. The method includes: providing a plate selected from anode plates, cathode plates, bipolar plates, or... |
| US-9,653,736 |
Method of producing porous metal-carbon materials A method for creating a metal-carbon composite. In one embodiment, the method includes the steps of providing a polymer Schiff base transition metal film... |
| US-9,653,735 |
Lithium anodes for electrochemical cells Provided is an anode for use in electrochemical cells, wherein the anode active layer has a first layer comprising lithium metal and a multi-layer structure... |
| US-9,653,731 |
Layered oxide materials for batteries Materials are presented of the formula: A.sub.xM.sub.yM.sup.i.sub.ziO.sub.2-d, where A is sodium or a mixed alkali metal including sodium as a major... |
| US-9,653,730 |
Non-aqueous secondary battery having a blended cathode active material An electrochemically active material comprising a mixture or blend of two groups of particles, exhibits synergetic effect. The two groups of particles are... |
| US-9,653,728 |
Graphene, power storage device, and electric device An object is to provide graphene which has high conductivity and is permeable to ions of lithium or the like. Another object is to provide, with use of the... |
| US-9,653,723 |
Battery terminal, fuse unit, and method for manufacturing fuse unit A battery terminal includes a terminal main body provided in opposed plates thereof as a pair, formed by folding approximately in a U shape a strip plate made... |
| US-9,653,721 |
Rechargeable battery A rechargeable battery including an electrode assembly including a separator, and a negative electrode and a positive electrode provided on opposite surfaces of... |
| US-9,653,718 |
Unification-typed electrode assembly and secondary battery using the same Disclosed herein is an integrated electrode assembly including a cathode, an anode, and a separation layer integrated between the cathode and the anode. The... |
| US-9,653,716 |
Manufacturing method for battery case lid including explosion-proof valve A battery case lid is formed by working a metal plate, and includes a substrate section and an explosion-proof valve formed in the substrate section. The... |
| US-9,653,703 |
Electroluminescent device including a protective film between an
electroluminescent element and a desiccant layer In an organic EL display device (electroluminescent device) equipped with an organic EL element (electroluminescent element), the organic EL element is... |
| US-9,653,698 |
Organic light-emitting display apparatus and fabrication method thereof Provided are an organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes a display... |
| US-9,653,691 |
Phosphorescence-sensitizing fluorescence material system Novel molecules are provided that include a sensitizer group, an acceptor group, and an electron-transfer barrier that suppresses triplet-triplet energy... |
| US-9,653,686 |
Organic film transistor, organic semiconductor film, organic semiconductor
material and application of these An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor... |
| US-9,653,683 |
Phase change memory cell with improved phase change material A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the... |
| US-9,653,671 |
Light emitting device and method for operating a plurality of light
emitting arrangements According to various examples, systems, methods, and devices for a light emitting device are described herein. As one example, a light emitting device includes... |
| US-9,653,665 |
LED dome with inner high index pillar Affixed over a transparent growth substrate (34) of an LED die (30) is a transparent rectangular pillar (40), having a footprint approximately the same size as... |
| US-9,653,664 |
Chip substrate comprising a groove portion and chip package using the chip
substrate Disclosed is a chip substrate. The chip substrate includes: conductive portions laminated in one direction to constitute the chip substrate; insulation portions... |
| US-9,653,661 |
Light-emitting device, method of manufacturing the same, method of
mounting the same and lighting device A method of manufacturing a light-emitting device includes a hole forming process for forming a through-hole that continues from a front surface to a back... |
| US-9,653,660 |
Chip scale LED packaging method A chip scale LED packaging method includes the following steps: clamping an upper mold with a plurality of through holes and a plate-shaped lower mold together;... |
| US-9,653,655 |
Light emitting diodes with zinc oxide current spreading and light
extraction layers deposited from low... A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure... |
| US-9,653,652 |
Flexible display apparatus and method of manufacturing the same Provided is a flexible display apparatus having an improved light extracting efficiency and a method of manufacturing the flexible display apparatus. The... |
| US-9,653,648 |
LED die An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode... |
| US-9,653,647 |
Ultrathin solid state dies and methods of manufacturing the same Various embodiments of SST dies and solid state lighting ("SSL") devices with SST dies, assemblies, and methods of manufacturing are described herein. In one... |
| US-9,653,639 |
Laser using locally strained germanium on silicon for opto-electronic
applications The subject matter disclosed herein relates to formation of silicon germanium devices with tensile strain. Tensile strain applied to a silicon germanium device... |
| US-9,653,637 |
Air cooled photovoltaic cells An apparatus is provided that comprises photovoltaic cells provided on a first rotatable member, an electric motor having an axial shaft, and a second rotatable... |
| US-9,653,634 |
Interlocking edges having electrical connectors for building integrable
photovoltaic modules Provided are novel building integrable photovoltaic (BIP) modules that are mechanically and electrically interconnectable. According to various embodiments, the... |
| US-9,653,631 |
Optoelectronic device with modulation doping An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type... |
| US-9,653,628 |
Absorber layer for photovoltaic device, and method of making the same A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, and an absorber layer disposed above the back contact layer. The... |
| US-9,653,625 |
Method for manufacturing anti-reflective coating for solar cell having
moth-eye structure and solar cell... A method of manufacturing antireflective coating for solar cell having a moth-eye structure and a solar cell including the same are provided to greatly reduce... |
| US-9,653,624 |
Optical sensor device The following configuration is adopted in order to provide a highly reliable optival sensor device which enhances the reliability of devices without making the... |
| US-9,653,623 |
Methods of manufacturing a semiconductor device In a method for fabricating a semiconductor, a first conductive pattern structure partially protruding upwardly from first insulating interlayer is formed in... |
| US-9,653,619 |
Chip diode and method for manufacturing same The present invention is directed to a chip diode with a Zener voltage Vz of 4.0 V to 5.5 V, including a semiconductor substrate having a resistivity of 3... |
| US-9,653,616 |
Display panel and display device using the same A display panel comprising a TFT substrate, a display medium and an opposite substrate is provided. The display medium is disposed between the TFT substrate and... |
| US-9,653,613 |
Semiconductor device and manufacturing method thereof Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first... |
| US-9,653,608 |
Array substrate and manufacturing method thereof, display device and thin
film transistor An array substrate and a manufacturing method thereof, a display device and a thin film transistor are provided. The method includes forming a pattern that... |
| US-9,653,605 |
Fin field effect transistor (FinFET) device and method for forming the
same A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate... |
| US-9,653,602 |
Tensile and compressive fins for vertical field effect transistors Various embodiments disclose a method for fabricating one or more vertical fin field-effect-transistors. In one embodiment, a spacer layer is formed in contact... |
| US-9,653,600 |
Semiconductor device and method of fabricating same A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a... |
| US-9,653,590 |
Compound semiconductor device and method of manufacturing the same A compound semiconductor device includes: a semiconductor substrate; a channel layer over the semiconductor substrate; a carrier supply layer over the channel... |
| US-9,653,589 |
Semiconductor multi-layer substrate, semiconductor device, and method for
manufacturing the same A semiconductor multi-layer substrate includes a substrate made of Si and a multi-layer semiconductor layer. The multi-layer semiconductor layer includes an... |
| US-9,653,588 |
GaN substrate, semiconductor device and method for fabricating GaN
substrate and semiconductor device A gallium nitride (GaN) substrate, a semiconductor device, and methods for fabricating a GaN substrate and a semiconductor device are provided. The GaN... |
| US-9,653,586 |
Amplifier device comprising enhanced thermal transfer and structural
features A heterojunction bipolar transistor (HBT) amplifier device includes transistor fingers arranged in parallel on a substrate. Each transistor finger includes a... |
| US-9,653,585 |
Vertical gate-all-around TFET A vertical tunneling FET (TFET) provides low-power, high-speed switching performance for transistors having critical dimensions below 7 nm. The vertical TFET... |
| US-9,653,582 |
Forming a Fin using double trench epitaxy The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a fin using double trench epitaxy.... |
| US-9,653,574 |
Selective etching in the formation of epitaxy regions in MOS devices A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate; forming a recess in the semiconductor substrate and... |
| US-9,653,573 |
Replacement metal gate including dielectric gate material A method of fabricating a semiconductor device includes forming at least one semiconductor fin on a semiconductor substrate. A plurality of gate formation... |
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