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Patent # Description
US-9,680,229 Modular reflector assembly for a reflector antenna
An modular reflector assembly may include a shell and a support frame. The modular reflector assembly may also include a plurality of support links that...
US-9,680,223 Mobile device and manufacturing method thereof
A mobile device includes a ground plane, a first radiation branch, and a second radiation branch. The second radiation branch is coupled to the ground plane,...
US-9,680,215 Omnidirectional broadband antennas including capacitively grounded cable brackets
Disclosed are exemplary embodiments of omnidirectional broadband antennas and capacitively grounded cable brackets. In an exemplary embodiment, an ...
US-9,680,210 Antenna arrangement
An antenna arrangement including a first antenna element connected to a first feed point and having a first electrical length; a second antenna element...
US-9,680,202 Electronic devices with antenna windows on opposing housing surfaces
An electronic device housing may have a base unit and a lid. Aligned antenna windows may be formed on opposing upper and lower surfaces of the base unit along a...
US-9,680,199 System and apparatus for driving antenna
A multiple-antenna positioning system with a single drive element, providing reduced weight and complexity over systems that have a drive element for each...
US-9,680,197 Micro bandpass filter
A micro bandpass filter comprises a substrate, a first signal transmission member, a second signal transmission member and a resonator structure. The resonator...
US-9,680,175 Integrated fuel line to support CPOX and SMR reactions in SOFC systems
A fuel cell system comprises at least one fuel cell stack, a CPOX reactor, and a conduit for providing a fuel stream to the at least one fuel cell stack through...
US-9,680,164 Current collector for fuel cell and stack structure including the same
Provided are a current collector for a fuel cell and a stack structure having the same. The fuel cell includes an electrolyte layer, and an air electrode layer...
US-9,680,151 Sub-stoichiometric, chalcogen-containing-germanium, tin, or lead anodes for lithium or sodium ion batteries
The disclosure relates to an anode or an electrolytic capacitor electrode including an active anode material containing a chalcogen-containing-germanium...
US-9,680,147 Battery having an electrode structure comprising long metal fibers and a production method therefor
The present invention relates to a battery having an electrode structure using long metal fibers, and to a production method therefor. According to one...
US-9,680,145 Prismatic secondary battery
A prismatic nonaqueous electrolyte secondary battery includes a convex portion on a stepped portion of a stepped through hole of a positive electrode external...
US-9,680,133 Display device
A display device includes a plurality of pixels each including a light emitting region; and a light blocking layer provided on a side of the plurality of pixels...
US-9,680,114 Flexible organic light emitting display and method for manufacturing the same
A flexible organic light emitting display and a method for manufacturing the same are disclosed. The method is: sequentially forming a first buffer layer, a...
US-9,680,112 Semiconductor composition
An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition...
US-9,680,110 Compounds for use in opto-electrical devices
A composition for use in fabricating opto-electrical devices comprising a solution processable triazine host material and a phosphorescent moiety.
US-9,680,108 Organic light-emitting device
An organic light-emitting device includes a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and...
US-9,680,106 Pyrene-based compound and organic light-emitting device including the same
A pyrene-based compound is represented by Formula 1: ##STR00001## where R.sub.11 to R.sub.14, L.sub.11, m11, n11, k11, a12, a13, and a14 are as defined in the...
US-9,680,099 Method for forming organic semiconductor film
A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a...
US-9,680,079 Production method of thermoelectric converter, production method of electronic device equipped with...
As the first conductive paste, a paste is used which is made by adding an organic solvent to powder of alloy in which a plurality of atoms keep a given crystal...
US-9,680,076 Light-emitting device, illumination device and backlight for display device
An LED chip (3) is disposed in a recessed portion (21p) formed by bending a metal lead frame (2). A reflector (4) has a resin reflection surface (4a) and the...
US-9,680,073 Light emitting module
A light emitting module includes: a substrate having a recess part formed thereon; a body surrounding some of side surfaces and an upper surface of the...
US-9,680,057 Ultraviolet light-emitting devices incorporating two-dimensional hole gases
In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote...
US-9,680,056 Ultraviolet light-emitting device with a heavily doped strain-management interlayer
A heteroepitaxy strain-management structure for a light emitting device includes: a substrate or template; an epitaxial layer to be epitaxially formed over the...
US-9,680,055 Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same
A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a...
US-9,680,054 Quantum dot light enhancement substrate and lighting device including same
A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer...
US-9,680,053 Nitride semiconductor device
A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the...
US-9,680,052 Optoelectronic gan-based component having increased ESD resistance via a superlattice and method for the...
An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film...
US-9,680,051 Light emitting diode with quantum barrier doping
A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a...
US-9,680,050 Semiconductor light emitting device
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode...
US-9,680,049 Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
In at least one embodiment, a method is designed to produce optoelectronic semiconductor chips. A carrier assembly, which is a sapphire wafer, is produced. A...
US-9,680,048 Method for producing a radiation-emitting semiconductor component
A method for producing a radiation-emitting semiconductor component is provided, comprising the following steps: --providing a growth substrate (1),...
US-9,680,047 Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing...
One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a...
US-9,680,039 Nanostructures and methods for manufacturing the same
A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a...
US-9,680,034 Manufacturing method for semiconductor device with point defect region doped with transition metal
A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. Plasma...
US-9,680,029 Semiconductor memory device
A semiconductor memory device includes a bit line; two or more word lines; and a memory cell including two or more sub memory cells that each include a...
US-9,680,027 Nickelide source/drain structures for CMOS transistors
A nickelide material with reduced resistivity is provided as source/drain contact surfaces in both NMOS and PMOS technology. The nickelide material layer may be...
US-9,680,026 Semiconductor device having gate electrode overlapping semiconductor film
A semiconductor device that can operate at high speed or having high strength against stress is provided. One embodiment of the present invention is a...
US-9,680,017 Semiconductor device including Fin FET and manufacturing method thereof
A semiconductor device includes a fin structure for a fin field effect transistor (FET). The fin structure includes a base layer protruding from a substrate, an...
US-9,680,009 High voltage semiconductor device
In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a...
US-9,680,008 Laterally diffused metal oxide semiconductor device and method of forming the same
A transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a...
US-9,680,007 Method for fabricating a metal high-k gate stack for a buried recessed access device
A method for fabricated a buried recessed access device comprising etching a plurality of gate trenches in a substrate, implanting and activating a source/drain...
US-9,680,006 Silicon carbide semiconductor device and method of manufacturing the same
A silicon carbide semiconductor device includes a silicon carbide layer having a first main surface and a second main surface opposite to the first main...
US-9,680,005 Semiconductor device having an active trench and a body trench
A semiconductor substrate having a first main surface and a transistor cell includes a drift region, a body region between the drift region and the first main...
US-9,680,004 Power MOSFET with seperate gate and field plate trenches
A power MOSFET includes a gate electrode in a gate trench in a main surface of a semiconductor substrate, the gate trench extending parallel to the main...
US-9,680,003 Trench MOSFET shield poly contact
A recess is formed at a semiconductor layer of a device to define a plurality of mesas. An active trench portion of the recess residing between adjacent mesas....
US-9,680,002 Semiconductor device with a variable-width vertical channel formed through a plurality of semiconductor layers
Semiconductor devices and manufacturing methods are provided for making channel and gate lengths independent from lithography. Also, semiconductor devices and...
US-9,680,001 Nitride semiconductor device
A nitride semiconductor device includes: a substrate; a buffer layer formed on the substrate; a laminated body formed by two or more cycles of semiconductor...
US-9,680,000 Terahertz radiating device and fabricating method for the same
The present invention relates to a terahertz radiating device, which includes a high electron mobility transistor (HEMT); a source provide to the HEMT; a gate...
US-9,679,999 Bidirectional bipolar transistors with two-surface cellular geometries
A two-surface bidirectional power bipolar transistor is constructed with a two-surface cellular layout. Each emitter/collector region (e.g. doped n-type) is a...
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