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Patent # Description
US-9,748,121 Thermal coupled quartz dome heat sink
Embodiments described herein generally relate to apparatus for processing substrates. The apparatus generally include a process chamber having a substrate...
US-9,748,120 Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus
An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared...
US-9,748,119 Wafer processing method
Disclosed herein is a wafer processing method in which laser processing is carried out on a wafer along streets. The wafer processing method includes a step of...
US-9,748,118 Substrate treating apparatus
Provided is a substrate treating apparatus. The substrate treating apparatus includes a treating container having an opened upper portion, a substrate heating...
US-9,748,117 Substrate treating apparatus and substrate treating method
Provided is a substrate treating apparatus. The substrate treating apparatus includes a chamber, a support member disposed within the chamber to support a...
US-9,748,116 Electronic device and method of manufacturing the same
Various embodiments provide an electronic device, wherein the electronic device comprises a mounting surface configured to mount the electronic device to an...
US-9,748,115 Electronic component and method for producing the same
An aspect of the invention is an electronic component including a semiconductor substrate 11 that has an electrode pad 12, a first resin layer 14 and a third...
US-9,748,114 Method for forming through silicon via in N+ epitaxy wafers with reduced parasitic capacitance
A semiconductor device includes an epitaxy layer formed on semiconductor substrate, a device layer formed on the epitaxy layer, a trench formed within the...
US-9,748,113 Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a...
US-9,748,112 Quality evaluation method for silicon wafer, and silicon wafer and method of producing silicon wafer using the...
After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device...
US-9,748,111 Method of fabricating semiconductor structure using planarization process and cleaning process
A method for fabricating a semiconductor structure includes following steps. First, a first layer, a second layer and a third layer are sequentially formed on...
US-9,748,110 Method and system for selective spacer etch for multi-patterning schemes
Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme, the method comprising: providing a substrate...
US-9,748,109 CMP-friendly coatings for planar recessing or removing of variable-height layers
An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a...
US-9,748,108 Method of forming graphene nanopattern by using mask formed from block copolymer
Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of...
US-9,748,107 Method for removing semiconductor fins using alternating masks
A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology)...
US-9,748,106 Method for fabricating semiconductor package
A method for fabricating a semiconductor package, the method includes forming at least one conductive via having a first end and a second end opposite the first...
US-9,748,105 Tungsten deposition with tungsten hexafluoride (WF6) etchback
Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises...
US-9,748,104 Method of depositing film
A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a...
US-9,748,103 SONOS stack with split nitride memory layer
A semiconductor device includes a polysilicon substrate, a first oxide layer formed on the polysilicon substrate, an oxygen-rich nitride layer formed on the...
US-9,748,102 Semiconductor chip arrangement and method thereof
A method for processing a semiconductor carrier is provided, the method including: providing a semiconductor carrier including a doped substrate region and a...
US-9,748,101 Substrate treatment method, computer storage medium, and substrate treatment system
The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic...
US-9,748,100 Substrate processing method, storage medium and substrate processing system
There is provided a method of processing a substrate using a block copolymer composed of a first polymer containing an oxygen atom and a second polymer...
US-9,748,099 Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes modifying a first laser beam from a first laser to form a first linear-shaped laser beam and modifying...
US-9,748,098 Controlled confined lateral III-V epitaxy
After forming a seed layer over a first end of a sacrificial semiconductor layer composed of silicon germanium, a remaining portion of the sacrificial...
US-9,748,097 Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for...
To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium...
US-9,748,096 Methods of preparation of semiconductor nanocrystals group IIIA and group VA elements
A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a...
US-9,748,095 Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having...
A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor...
US-9,748,094 Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and...
A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor...
US-9,748,093 Pulsed nitride encapsulation
Aspects of the disclosure pertain to methods of forming conformal liners on patterned substrates having high height-to-width aspect ratio gaps. Layers formed...
US-9,748,092 Liquid chemical for forming protecting film
Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of...
US-9,748,091 Substrate treatment apparatus and substrate treatment method
In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying...
US-9,748,090 Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
A semiconductor manufacturing apparatus according to an embodiment includes a first cleaner and a second cleaner. The first cleaner polishes a semiconductor...
US-9,748,089 Method for producing mirror-polished wafer
A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained...
US-9,748,088 Method, storage medium and system for controlling the processing of lots of workpieces
A method includes processing each of a plurality of lots with at least one first equipment and moving some of the plurality of lots to a first storage. For each...
US-9,748,087 Short arc flash lamp and light source device
Disclosed herein are a short arc type flash lamp having high lamp starting performance and capable of reducing the diameter of its seal tube part, and a light...
US-9,748,086 Laser driven sealed beam lamp
A method and apparatus for a sealed high intensity illumination device are disclosed. The device is configured to receive a laser beam from a laser light...
US-9,748,085 Systems and methods of detecting and demonstrating heat damage to hair via evaluation of peptides
A method to measure heat damage of keratin fibers comprising eluting a peptide from a hair sample with an aqueous solution; extracting the peptide using a...
US-9,748,084 Direct sample analysis device adapters and methods of using them
Certain embodiments described herein are directed to adapters for use in coupling a direct sample analysis device to an analytical instrument such as, for...
US-9,748,083 Method of tandem mass spectrometry
A method of tandem mass spectrometry is disclosed. A quasi-continuous stream of ions from an ion source (20) and having a relatively broad range of mass to...
US-9,748,082 Apparatus for cylindrical magnetron sputtering
A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic...
US-9,748,081 Method of manufacturing semiconductor device and sputtering apparatus
Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of...
US-9,748,080 Cu--Ga alloy sputtering target and method for producing same
According to the present invention, a Cu--Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a...
US-9,748,079 Cylindrical sputtering target material
Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios...
US-9,748,078 Dual phase cleaning chambers and assemblies comprising the same
In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture...
US-9,748,077 Substrate processing device and substrate processing method
Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least...
US-9,748,076 Apparatus for frequency tuning in a RF generator
A radio-frequency (RF) generator is provided that includes an exciter, a power amplifier, a filter, a sensor, and a frequency-tuning subsystem. The...
US-9,748,075 Apparatus for manufacturing template and method for manufacturing template
According to one embodiment, an apparatus for manufacturing a template includes a vacuum chamber, an electrode and an adjustor. The vacuum chamber includes an...
US-9,748,074 Data generating apparatus, energy beam writing apparatus, and energy beam writing method
In one embodiment, a data generating apparatus generates data including an irradiation amount of a beam in each pixel for an energy beam writing apparatus. The...
US-9,748,073 Analysis method using electron microscope, and electron microscope
An analysis method using an electron microscope, detects by a first electronography detector an electron beam transmitted through or scattered by a sample to...
US-9,748,072 Lower dose rate ion implantation using a wider ion beam
In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator....
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