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Patent # Description
US-9,768,392 Organic light-emitting device
An organic light-emitting device includes a first electrode; a second electrode; and an organic layer between the first electrode and the first electrode and...
US-9,768,391 Derivatives of 2-diarylaminofluorene and organic electronic compounds containing them
The present invention relates to certain fluorenes, to the use of the compounds in an electronic device, and to an electronic device comprising at least one of...
US-9,768,390 Phenanthroline derivative for organic electroluminescent device
The present invention discloses a phenanthroline derivative is represented by the following formula(I), the organic EL device employing the phenanthroline...
US-9,768,389 Compound for optoelectronic device, organic light-emitting diode including same, and display device including...
Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic...
US-9,768,388 Amine-based compound and organic light-emitting diode including the same
An amine-based compound is represented by Formula 1 below: ##STR00001## wherein Z.sub.11 to Z.sub.24, R.sub.1 to R.sub.4 and Ar.sub.1 are as indicated in the...
US-9,768,387 Organic light emitting diode and organic light emitting display apparatus having the same
An organic light emitting diode includes a hole injection layer, a hole transport layer, an emission layer, an electron transport layer and an electron...
US-9,768,386 Composition for encapsulation film, encapsulation film, and electronic device comprising the same
There are provided a composition for encapsulation film, an encapsulation film, and an electronic device having the same. The present application may provide an...
US-9,768,384 Organic light-emitting display apparatus and method of manufacturing the same
A method of manufacturing an organic light-emitting display apparatus including forming a liftoff layer containing a fluoropolymer on a substrate, forming a...
US-9,768,383 Method for applying an organic semiconductor layer based on epindolidione to a carrier
A method is described for applying an organic semiconductor layer based on epindolidione to a carrier. In order to provide advantageous production conditions it...
US-9,768,382 Display substrate, its manufacturing method and display device
The present disclosure relates to the field of display technology, and provides a display substrate, its manufacturing method, and a display device. Pixel...
US-9,768,381 Resistive random access memory device having a nano-scale tip, memory array using the same and fabrication...
The present invention relates to a resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereof....
US-9,768,380 Nonvolatile semiconductor memory device and method of manufacturing the same
According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor...
US-9,768,379 Non volatile resistive memory cell and its method of making
A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two...
US-9,768,378 Cross-point memory and methods for fabrication of same
The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same....
US-9,768,377 Magnetic cell structures, and methods of fabrication
A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a...
US-9,768,376 Magnetic memory cells, semiconductor devices, and methods of operation
A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be...
US-9,768,375 Piezoelectric material, piezoelectric element, multilayered piezoelectric element, manufacturing method for...
Provided is a piezoelectric material that is free of lead and potassium, has satisfactory insulation property and piezoelectricity, and has a high Curie...
US-9,768,374 Method of manufacturing cylindrical piezoelectric element
In manufacturing method of a cylindrical piezoelectric element, a cylindrical piezoelectric material is formed by molding a piezoelectric material into a...
US-9,768,373 Switched resonant ultrasonic power amplifier system
A switched resonant power amplifier system for ultrasonic transducers is disclosed. The system includes an amplifier that receives and processes a driver output...
US-9,768,372 Semiconductor device, superconducting device, and manufacturing method of semiconductor device
A semiconductor device of an embodiment includes a layered substance formed by laminating two-dimensional substances in two or more layers. The layered...
US-9,768,371 Systems and methods for fabrication of superconducting integrated circuits
Various techniques and apparatus permit fabrication of superconductive circuits. A niobium/aluminum oxide/niobium trilayer may be formed and individual...
US-9,768,370 Low AC loss high temperature superconductor tape
A superconductor tape includes a plurality of conductive strips having respective long directions parallel to a long tape direction of the superconductor tape,...
US-9,768,369 LED metal substrate package and method of manufacturing same
The present invention relates to an LED metal substrate package, and particularly, to an LED metal substrate package having a heat dissipating structure, and a...
US-9,768,368 Side interconnect for light emitting device
Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal...
US-9,768,367 Light emitting device
A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize...
US-9,768,366 Solid state optoelectronic device with preformed metal support substrate
A wafer-level process for manufacturing solid state lighting ("SSL") devices using large-diameter preformed metal substrates is disclosed. A light emitting...
US-9,768,365 Light emitting device
A light emitting device includes a flexible substrate, at least one light emitting element, a sealing resin and an adhesion layer. The flexible substrate...
US-9,768,364 Light emitting device and method of manufacturing the same
The light emitting device is manufactured by processing that includes forming encapsulating member at least on the upper surface and upper surface perimeter of...
US-9,768,363 Light emitting device module
Embodiments provide a light emitting device module including a circuit board, a light emitting device bonded to a conductive layer on the circuit board via a...
US-9,768,362 Light-emitting device and method of manufacturing the same
Disclosed are a light-emitting device and a manufacturing method thereof. A light-emitting device according to a preferred embodiment of the disclosure...
US-9,768,361 Light emitter and light detector modules including vertical alignment features
This disclosure describes various modules that can provide ultra-precise and stable packaging for an optoelectronic device such as a light emitter or light...
US-9,768,360 Optoelectronic component and method of producing an optoelectronic component
An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives...
US-9,768,359 Semiconductor device, method for manufacturing same, light-emitting diode, and method for manufacturing same
A semiconductor device is disclosed, and the semiconductor device comprises: a semiconductor layer; and a transparent electrode which is formed from a...
US-9,768,358 Vertical type light emitting device having transparent electrode and method of manufacturing the same
Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to...
US-9,768,357 Ultraviolet reflective rough adhesive contact
A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer...
US-9,768,356 Method for forming a metal contact on a surface of a semiconductor, and device with a metal contact
A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used...
US-9,768,355 Production of graphene and nanoparticle catalysts supported on graphene using laser radiation
Methods and apparatuses to produce graphene and nanoparticle catalysts supported on graphene without the use of reducing agents, and with the concomitant...
US-9,768,354 Light emitting diode chip
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of...
US-9,768,353 Power light emitting diode and method with uniform current density operation
A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick...
US-9,768,352 Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction...
US-9,768,351 Optoelectronic semiconductor device with barrier layer
An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a...
US-9,768,350 In-series electrical connection of light-emitting nanowires
An optoelectronic device includes at least first and second light-emitting nanowires on a support, each comprising an area for the injection of holes and an...
US-9,768,349 Superlattice structure
A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different...
US-9,768,347 High speed surface plasmon coupled light emitting diodes
A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped...
US-9,768,346 Light-emitting device
A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first...
US-9,768,345 LED with current injection confinement trench
A method and structure for forming an array of LED devices is disclosed. The LED devices in accordance with embodiments of the invention may include a confined...
US-9,768,344 Method of producing a semiconductor body
A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged...
US-9,768,343 Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate
Laser patterning methods utilize a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions to improve cell...
US-9,768,342 Solar cell and method for manufacturing the same
A method for manufacturing a solar cell includes forming a first dielectric layer on a second surface opposite a first surface of a substrate; forming second...
US-9,768,341 Proximity detector device with interconnect layers and related methods
A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby,...
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