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Patent # Description
US-9,768,236 Organic light emitting diode display panel and manufacturing method thereof
An organic light emitting diode display panel and a manufacturing method thereof. The display panel includes a plurality of pixel units arranged in arrays, each...
US-9,768,235 Organic light emitting display device
An organic light emitting display device includes a substrate, a first pixel configured emit light having a first color, and a second pixel configured to emit...
US-9,768,234 Resistive memory architecture and devices
Providing a high-density two-terminal memory architecture(s) having performance benefits of two-terminal memory and relatively low fabrication cost, is...
US-9,768,233 Semiconductor device and method of manufacturing the same
A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating...
US-9,768,232 Variable resistance memory device and a method of manufacturing the same
A variable resistance memory device including a substrate, a first insulation layer disposed on the substrate, first and second conductive lines, and memory...
US-9,768,231 High density multi-time programmable resistive memory devices and method of forming thereof
Multi-time programmable (MTP) random access memory (RRAM) devices and methods for forming a MTP RRAM device are disclosed. The method includes providing a...
US-9,768,230 High rectifying ratio diode
Devices and methods for forming a device are disclosed. The device includes a substrate and a selector diode disposed over the substrate. The diode includes...
US-9,768,229 Bottom pinned SOT-MRAM bit structure and method of fabrication
Embodiments of the present disclosure generally relate to data storage and computer memory systems, and more particularly, to a SOT-MRAM chip architecture. The...
US-9,768,228 Semiconductor device and method for manufacturing the same
The present invention relates to a semiconductor device, including: a substrate; a plurality of first semiconductor elements and a second semiconductor element...
US-9,768,227 Light-emitting element having a plurality of light-emitting structures
A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first...
US-9,768,226 Solid-state imaging device
A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode...
US-9,768,225 Overmolded reconstructed camera module
A camera module including a die having a top side and a bottom side, an image sensor is positioned on the top side of the die and a conductive via is formed...
US-9,768,224 Image sensor including multiple lenses and method of manufacture thereof
A method includes fabricating an image sensing element in a substrate. A plurality of inter-metal dielectric (IMD) layers are formed over the substrate. Each...
US-9,768,223 Electronics device package and fabrication method thereof
Embodiments provide a chip device package and a method for fabricating thereof. A semiconductor chip has a substrate. A supporting brick is separated from the...
US-9,768,222 Light detection device including a semiconductor light detection element, a mounting substrate, and quenching...
A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the...
US-9,768,221 Pad structure layout for semiconductor device
A semiconductor device including a light sensing region disposed on a substrate is provided that includes a bond structure having one or more patterned layers...
US-9,768,220 Deep trench isolation structure for image sensors
Some embodiments of the present disclosure relate to a deep trench isolation structure. This deep trench isolation structure is formed on a semiconductor...
US-9,768,219 Imaging device and method of manufacturing the same
A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including...
US-9,768,218 Self-aligned back side deep trench isolation structure
A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region...
US-9,768,217 Solid-state image sensing device and camera with asymetric microlenses
A solid-state image sensing device including a pixel array including a plurality of pixels, wherein each pixel comprises a photoelectric conversion portion...
US-9,768,216 Image sensor device with different width cell layers and related methods
An image sensor device may include an interconnect layer, an image sensor IC on the interconnect layer, and a barrel adjacent the interconnect layer and having...
US-9,768,215 Solid-state imaging apparatus, method of manufacturing the same, and electronic apparatus
A solid-state imaging apparatus including a plurality of phase difference detection pixels configured adjacent to one another; and an isolation structure...
US-9,768,214 Structure of dielectric grid for a semiconductor device
A device includes a substrate having a non-pixel region and a pixel region; sensor elements disposed in the pixel region; and a metal layer disposed over the...
US-9,768,213 Solid-state image sensor and camera
A solid-state image sensor comprising pixels, each including a first region of a first conductivity type, a second region of the first conductivity type formed...
US-9,768,212 Method and apparatus for enabling sensors in a dual matrix sensor array
The subject matter disclosed herein describes an optical sensor used in a safety system. The sensor includes two pixel matrices on a single substrate. Each of...
US-9,768,211 Integrated avalanche photodiode arrays
A photodetector includes an array of pixels, each pixel comprising a defined doped region defined in a doped semiconductor layer. The defined doped region is...
US-9,768,210 Semiconductor device having antenna and sensor elements
When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion...
US-9,768,209 Display apparatus and method of manufacturing the same
A display apparatus includes a base substrate, a pixel on the base substrate, and a color filter part between the base substrate and the pixel. The pixel...
US-9,768,208 Method of manufacturing organic light emitting display apparatus
An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching...
US-9,768,207 Manufacturing method of semiconductor device
It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at...
US-9,768,206 Display substrate and method of manufacturing the same
A display substrate includes a base substrate comprising a plurality of sub-pixels, a first switching element disposed on the base substrate and electrically...
US-9,768,205 Display device
A display device includes a pixel including a thin film transistor, and an under layer below the thin film transistor. The thin film transistor includes a first...
US-9,768,204 Array substrate and display device and method for making the array substrate
An array substrate includes a substrate, driving TFTs, and switch TFTs directly on the substrate. The driving TFT includes a buffer layer, a gate, a first gate...
US-9,768,203 TFT arrangement structure comprising stacked dual TFT's
The present invention provides a TFT arrangement structure, comprising a first thin film transistor (T1) and a second thin film transistor (T2) controlled by...
US-9,768,202 TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and...
The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T1) and a drive...
US-9,768,201 Display device and electronic device
A display device includes overlapping two display panels. The display panel on the upper side includes a first display region and a region that transmits...
US-9,768,200 TFT backplate structure and manufacture method thereof
A TFT backplate structure and a manufacture method thereof are provided. The TFT backplate structure includes a switch TFT (T1) and a drive TFT (T2). The switch...
US-9,768,199 Semiconductor device
An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including...
US-9,768,198 Display device and electronic device
A bendable display device, lighting device, or electronic device which is unlikely to be broken when handled. The display device, lighting device, or electronic...
US-9,768,197 Flexible display panel
A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers...
US-9,768,196 Flexible display apparatus, flexible display motherboard and method for manufacturing flexible display motherboard
A flexible display motherboard is disclosed. The motherboard includes a first group of flexible display units, where the first group includes at least one...
US-9,768,195 Semiconductor structure with integrated passive structures
A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method...
US-9,768,194 Methods of forming memory arrays
A method of forming a memory array includes filling a circular hole that is lined with a charge trapping layer with a conductor, forming a first slot and a...
US-9,768,193 Three-dimensional (3D) semiconductor devices and methods of fabricating 3D semiconductor devices
A three-dimensional (3D) semiconductor device includes a stack of conductive layers spaced from each other in a vertical direction, the stack having a...
US-9,768,192 Three-dimensional memory device containing annular etch-stop spacer and method of making thereof
An etch-stop annular spacer can be formed around a protruding portion of a sacrificial pillar structure that fills a lower memory opening through a first...
US-9,768,191 Semiconductor device
According to one embodiment, a semiconductor device includes a stacked body; a columnar portion; a plate portion; and a blocking insulating film. The stacked...
US-9,768,190 Semiconductor memory devices having vertical pillars that are electrically connected to lower contacts
A semiconductor memory device may include an electrode structure including a selection line on a substrate and word lines between the substrate and the...
US-9,768,189 Semiconductor memory device
According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate;...
US-9,768,188 Semiconductor memory
A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions...
US-9,768,187 Method of manufacturing split-gate non-volatile memory with hi-voltage and low-voltage peripheral circuitry
To provide a semiconductor device having improved performance. A method of manufacturing the semiconductor device includes forming, after formation of a control...
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