Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,786,784 Vertical field effect transistor and method of fabricating the same
A vertical fin field effect transistor (V-FinFET) is provided as follows. A T-shaped fin structure extend vertically from an upper surface of a substrate. The...
US-9,786,783 Transistor architecture having extended recessed spacer and source/drain regions and method of making same
Techniques are disclosed for forming transistor architectures having extended recessed spacer and source/drain (S/D) regions. In some embodiments, a recess can...
US-9,786,782 Source/drain FinFET channel stressor structure
A semiconductor structure includes a material stack of, from bottom to top, an insulator structure and a semiconductor fin portion located on a pedestal portion...
US-9,786,781 Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic...
A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and...
US-9,786,780 Integrated circuits having source/drain structure
An integrated circuit includes a gate structure over a substrate. A silicon-containing material structure is in each of recesses that are adjacent to the gate...
US-9,786,779 High voltage double-diffused MOS (DMOS) device and method of manufacture
A method of forming an integrated DMOS transistor/EEPROM cell includes forming a first mask over a substrate, forming a drift implant in the substrate using the...
US-9,786,778 Semiconductor device
A semiconductor device including a first electrode, a second electrode, and a silicon carbide layer of which at least a portion is provided between the first...
US-9,786,777 Semiconductor device and method of making same
A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one...
US-9,786,776 Vertical semiconductor device and manufacturing method thereof
The present invention discloses a vertical semiconductor device and a manufacturing method thereof. The vertical semiconductor device includes: a substrate...
US-9,786,775 Normally-off high electron mobility transistors and fabrication methods thereof
Disclosure includes a normally-off field-effect semiconductor device and the fabrication method thereof. An antigrowth portion is formed on a template. A first...
US-9,786,774 Metal gate of gate-all-around transistor
The disclosure relates to a semiconductor device. An exemplary structure for a semiconductor device comprises a nanowire structure comprising a channel region...
US-9,786,773 Thin-substrate double-base high-voltage bipolar transistors
B-TRAN bipolar power transistor devices and methods, using a drift region which is much thinner than previously proposed double-base bipolar transistors of...
US-9,786,772 Semiconductor device and method for manufacturing the same
A semiconductor device according to the present invention includes a semiconductor substrate, having an emitter layer of a first conductivity type, a collector...
US-9,786,771 Semiconductor device with contact groove arrangements providing improved performance
The performance of a semiconductor device is improved. An emitter electrode is coupled to a P-type body region and an N.sup.+-type emitter region of a linear...
US-9,786,770 Semiconductor device structure with non planar slide wall
A semiconductor device that includes a semiconductor structure having a side wall that is non planar and that extends farther outward at an upper portion than...
US-9,786,769 Complementary tunneling FET devices and method for forming the same
Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET...
US-9,786,768 III-V vertical field effect transistors with tunable bandgap source/drain regions
Vertical field effect transistor (FET) device with tunable bandgap source/drain regions are provided, as well as methods for fabricating such vertical FET...
US-9,786,767 Air gap contact formation for reducing parasitic capacitance
A functional gate structure is located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor...
US-9,786,766 Methods of fabricating transistors with a protection layer to improve the insulation between a gate electrode...
A semiconductor device includes a gate electrode formed on a sidewall of a structure extending from a semiconductor substrate. A junction region is form in the...
US-9,786,765 FINFET having notched fins and method of forming same
One aspect of the disclosure provides for a method of forming a replacement gate structure. The method may include: removing a dummy gate from over a set of...
US-9,786,764 Fin-FET semiconductor device with a source/drain contact having varying different widths
A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction...
US-9,786,763 Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device includes: forming a lattice defect layer in a substrate having a front surface region where a bipolar element...
US-9,786,762 Gate electrode of a semiconductor device, and method for producing same
A semiconductor device includes a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode having a metal...
US-9,786,761 Integrated circuit device having an interfacial layer and method of manufacturing the same
An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the...
US-9,786,760 Air gap and air spacer pinch off
Embodiments are directed to a method of forming a semiconductor device and resulting structures having an air spacer between a gate and a contact by forming a...
US-9,786,759 Semiconductor device having multiwork function gate patterns
A semiconductor device includes a semiconductor substrate having a first area and a second area, and a first gate pattern on the first area and a second gate...
US-9,786,758 Vertical Schottky barrier FET
A method for fabricating a vertical Schottky barrier transistor includes forming fin trenches through a dielectric layer and a dummy gate stack on a substrate...
US-9,786,757 Method of forming horizontal gate all around structure
This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the...
US-9,786,756 Self-aligned source and drain regions for semiconductor devices
A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate...
US-9,786,755 Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of...
An integrated circuit includes a first zone for a first transistor and a second zone for a second transistor. The transistors are supported by a substrate of...
US-9,786,754 Method for forming semiconductor device structure
A method for forming a semiconductor device structure is provided. The method includes: forming a plurality of trenches in the substrate; forming a gate...
US-9,786,753 Self-aligned dual trench device
A power MOSFET or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed...
US-9,786,752 Semiconductor device and method for manufacturing semiconductor device
A semiconductor device of the present invention is a semiconductor device selectively including a nonvolatile memory cell on a semiconductor substrate, and...
US-9,786,751 Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s)
Disclosed are semiconductor structures comprising a field effect transistor (FET) having a low-resistance source/drain contact and, optionally, low...
US-9,786,750 Thin film transistor substrates including first and second drain electrodes and display devices including the same
A thin film transistor substrate includes a data line, a gate line, a gate electrode, a source electrode, a first drain electrode, a semiconductor layer and a...
US-9,786,749 Semiconductor device having a voltage resistant structure
A semiconductor device having a voltage resistant structure in a first aspect of the present invention is provided, comprising a semiconductor substrate, a...
US-9,786,748 Semiconductor device, silicon wafer and silicon ingot
A CZ silicon ingot is doped with donors and acceptors and includes an axial gradient of doping concentration of the donors and of the acceptors. An electrically...
US-9,786,747 Wiring substrate, manufacturing method of wiring substrate and electronic component device
A wiring substrate includes an insulation layer having an electronic component mounting area, and a wiring layer embedded in the insulation layer, the wiring...
US-9,786,746 Semiconductor device with improved reverse recovery characteristics
A semiconductor device includes a diode and a semiconductor substrate. The diode includes a p-type anode region and an n-type cathode region. A lifetime control...
US-9,786,744 P-doping of group-III-nitride buffer layer structure on a heterosubstrate
An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management...
US-9,786,743 Semiconductor device with electron supply layer
A semiconductor device includes a semiconductor stacked structure including at least an electron transit layer and an electron supply layer over a substrate....
US-9,786,742 Semiconductor device
A semiconductor device according to an embodiment includes a SiC layer having a first plane and a second plane, a gate insulating film provided on the first...
US-9,786,741 Silicon carbide semiconductor device and method for manufacturing the same
A silicon carbide semiconductor device includes a silicon carbide layer and a gate insulating layer. The silicon carbide layer has a main surface. The gate...
US-9,786,740 Semiconductor device and method for producing the same
A semiconductor device of according to an embodiment of the present disclosure includes a n-type SiC layer; a SiC region provided on the n-type SiC layer and...
US-9,786,739 Stacked nanosheets by aspect ratio trapping
A semiconductor structure is provided that includes a plurality of suspended and stacked nanosheets of semiconductor channel material located above a pillar of...
US-9,786,738 Semiconductor device with well resistor and alternated insulating and active regions between input and output...
A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device...
US-9,786,737 FinFET with reduced parasitic capacitance
A semiconductor device including at least one fin extending upward from a substrate and a gate on the substrate, wherein the gate includes outer sidewalls,...
US-9,786,736 Power semiconductor device
A problem associated with n-channel power MOSFETs and the like that the following is caused even by relatively slight fluctuation in various process parameters...
US-9,786,735 Semiconductor device and method of manufacturing the same
A super junction structure having a high aspect ratio is formed. An epitaxial layer is dividedly formed in layers using the trench fill process, and when each...
US-9,786,733 Moisture barrier capacitors in semiconductor components
Structures and methods of forming moisture barrier capacitor on a semiconductor component are disclosed. The capacitor is located on the periphery of a...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.