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Patent # Description
US-9,793,438 Light emitting device
A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface,...
US-9,793,437 Graphene-based solid state devices capable of emitting electromagnetic radiation and improvements thereof
Described herein are solid-state devices based on graphene in a Field Effect Transistor (FET) structure that emits high frequency Electromagnetic (EM) radiation...
US-9,793,436 Semiconductor light-emitting device
A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion...
US-9,793,435 Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for...
US-9,793,434 LED element and method of manufacturing the same
An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided. An LED element comprises a semiconductor...
US-9,793,433 UV light emitting devices and systems and methods for production
A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer...
US-9,793,432 Light emitting devices and methods of manufacturing the same
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on...
US-9,793,431 Optoelectronic device with improved light extraction efficiency
The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an...
US-9,793,430 Heterojunction schottky gate bipolar transistor
Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The...
US-9,793,429 Photovoltaic intensification system using solar tracking concentrators and heat exchangers
A photovoltaic intensification system includes a solar array stand, further including a mounting base; a mounting column; a solar array frame, a solar array,...
US-9,793,428 Photovoltaic cell module heat extraction assembly
An assembly for extracting heat from a photovoltaic cell assembly for a receiver of a solar radiation-based electrical power generating system is disclosed. The...
US-9,793,427 Air venting on proximity sensor
One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to an...
US-9,793,426 Method for processing surface of light-transmitting glass and light-transmitting glass processed by said method
To impart antiglare properties without reducing the amount of transmitted light, a method for processing a surface of light-transmitting-glass according to the...
US-9,793,425 Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration...
US-9,793,424 Photoelectric conversion device and optical signal receiving unit having photodiode
A photoelectric conversion device includes a substrate having a first surface and a second surface that is an opposite side of the first surface, wherein one of...
US-9,793,423 Light receiving device including transparent electrode and method of manufacturing light receiving device
Provided is a light receiving device including a transparent electrode and a method of manufacturing the light receiving device. A transparent electrode is...
US-9,793,422 Solar cell
The present invention is to grant a margin in the control of a depth of a groove when removing a transparent insulation layer after the transparent insulation...
US-9,793,421 Systems, methods and apparatus for precision automation of manufacturing solar panels
Systems and methods for manufacturing solar panels are disclosed. Solar cells are placed on a conveyor that transports the cells from a start point to an end...
US-9,793,420 Growth layer for photovoltaic applications
Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum...
US-9,793,419 Silicon photoelectric multiplier with multiple read-out
A silicon-based photoelectric multiplier comprises a plurality of cells and a number of read-out lines, and at least one of a number read-out pads or a...
US-9,793,418 Schottky barrier diode
A Schottky metal 9 is in Schottky-contact with a center portion of a surface of an epitaxial layer 4. A peripheral trench 13 is formed by digging from the...
US-9,793,417 Nanowire nanoelectromechanical field-effect transistors
A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a ...
US-9,793,416 Method for manufacturing semiconductor device
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is...
US-9,793,415 Semiconductor device and method of manufacturing the same
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate...
US-9,793,414 Oxide semiconductor film
To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In--Ga--Zn oxide, thereby separating a...
US-9,793,413 Metal oxide thin film transistor having channel protection layer
The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer...
US-9,793,412 Semiconductor device
A transistor is provided in which the bottom surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar...
US-9,793,411 Manufacturing method and structure of oxide semiconductor TFT substrate
The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to...
US-9,793,410 Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a...
US-9,793,409 Thin film transistor array panel
A semiconductor device comprises a multi-layered structure disposed over a substrate and defining a composite lateral etch profile. The multi-layered structure...
US-9,793,408 Fin field effect transistor (FinFET)
A FinFET whose fin has an upper portion doped with a first conductivity type and a lower portion doped with a second conductivity type, and the junction between...
US-9,793,407 Fin field effect transistor
A substrate is patterned to form trenches and a semiconductor fin between the trenches. Insulators are formed in the trenches and a dielectric layer is formed...
US-9,793,406 Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, at least two gate spacers, and a gate stack. The substrate has at least one semiconductor fin. The gate spacers are...
US-9,793,405 Semiconductor lateral sidewall growth from a semiconductor pillar
A method is provided that may include providing a plurality of semiconductor pillars extending from a surface of a substrate, wherein a spacer is present on...
US-9,793,404 Silicon germanium p-channel FinFET stressor structure and method of making same
A source/drain (S/D) structure includes a SiGe structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel...
US-9,793,403 Multi-layer fin field effect transistor devices and methods of forming the same
Multi-layer fin field effect transistor devices and methods of forming the same are provided. The devices may include a fin shaped channel structure on a...
US-9,793,402 Retaining strain in finFET devices
A method for fabricating a semiconductor device comprises patterning a strained fin from a strained layer of semiconductor material arranged on a substrate,...
US-9,793,401 Vertical field effect transistor including extension and stressors
A vertical field effect transistor (FET) includes a first source/drain region formed on an upper surface of a semiconductor substrate, and a semiconductor...
US-9,793,399 Semiconductor device having insulating pattern and method of forming the same
A semiconductor device includes a stressor and an insulating pattern. A device isolation layer is formed to define an active area on a substrate. A first gate...
US-9,793,398 Fabrication of a strained region on a substrate
A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the...
US-9,793,397 Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor
A method is presented for forming a semiconductor device. The method includes forming an oxygen containing interfacial layer on a semiconductor substrate,...
US-9,793,396 Method and structure of making enhanced UTBB FDSOI devices
An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of...
US-9,793,395 Vertical vacuum channel transistor
A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a...
US-9,793,394 Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures
Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures are provided. An exemplary method for...
US-9,793,393 MOSFET device and fabrication
A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon...
US-9,793,392 Semiconductor device
A MOS gate structure is provided on a p-type base layer side of a silicon carbide semiconductor base formed by sequentially forming on a front surface of an...
US-9,793,391 Power MOSFET semiconductor
A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of...
US-9,793,390 Low miller factor semiconductor device
A semiconductor device includes a substrate, an active layer, a source electrode, a drain electrode, a gate electrode, a first metal layer, and a second metal...
US-9,793,389 Apparatus and method of fabrication for GaN/Si transistors isolation
In one embodiment, a method of fabricating a semiconductor device having an isolated first transistor circuit and an isolated second transistor circuit is...
US-9,793,387 Semiconductor device including a vertical PN junction between a body region and a drift region
A semiconductor device includes a drift region extending from a first surface into a semiconductor portion. A body region between two portions of the drift...
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