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Patent # Description
US-9,793,130 Method for processing object to be processed
In a method according to one embodiment, a first processing gas is supplied into a processing container of a plasma processing apparatus, and a plasma of the...
US-9,793,129 Segmented edge protection shield
A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield...
US-9,793,128 Plasma processing chamber with dual axial gas injection and exhaust
An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper...
US-9,793,127 Plasma generation and pulsed plasma etching
One or more plasma etching techniques are provided. Selective plasma etching is achieved by introducing a gas into a chamber containing a photoresist over a...
US-9,793,126 Ion to neutral control for wafer processing with dual plasma source reactor
The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper...
US-9,793,125 SONOS stack with split nitride memory layer
A semiconductor device includes a polysilicon substrate, a first oxide layer formed on the polysilicon substrate, an oxygen-rich nitride layer formed on the...
US-9,793,124 Semiconductor structures
Methods of fabricating a semiconductor structure comprise forming an opening through a stack of alternating tier dielectric materials and tier control gate...
US-9,793,123 Method for fabricating a nano structure
Provided are a nano structure, a fabrication method thereof, and an application device thereof. The method for fabricating a nano structure includes: forming a...
US-9,793,122 Combined laser processing system and focused ion beam system
A processing system for forming a cross-section of an object. The processing system comprises a focused ion beam system for forming the cross-section from a...
US-9,793,121 Method of manufacturing silicon carbide semiconductor device
A method of manufacturing a silicon carbide semiconductor device, having a silicon carbide semiconductor element substrate and a surface electrode film forming...
US-9,793,120 Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device
According to one embodiment, a device substrate includes a multilayer film that includes a film constituting a device element and is disposed on a substrate. A...
US-9,793,119 Method for structuring a substrate using a protection layer as a mask
According to various embodiments, a method of processing a substrate may include: disposing a viscous material over a substrate including at least one...
US-9,793,118 Method and apparatus for treating substrate
Disclosed are a method and an apparatus for applying a liquid onto a substrate. The method for treating a substrate, the method includes: a liquid supplying...
US-9,793,116 Reactor and method for production of silicon by chemical vapor deposition
The invention provides a reactor for the manufacture of silicon by chemical vapor deposition (CVD), the reactor comprises a reactor body that can rotate around...
US-9,793,115 Structures and devices including germanium-tin films and methods of forming same
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an...
US-9,793,114 Uniform height tall fins with varying silicon germanium concentrations
A method of making a semiconductor device includes forming a first fin in a first semiconducting material layer disposed over a substrate, the first...
US-9,793,113 Semiconductor structure having insulator pillars and semiconductor material on substrate
One aspect of the disclosure relates to a method of forming a semiconductor structure. The method may include: forming a set of openings within a substrate;...
US-9,793,112 Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing...
US-9,793,111 Spin coating method and manufacturing method of electronic component
A spin coating method according to an embodiment includes forming a first material film on an underlying material. The underlying material is rotated while a...
US-9,793,110 Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming...
US-9,793,109 Perhydropolysilazane, composition containing same, and method for forming silica film using same
[Problem] To provide a perhydropolysilazane making it possible to form a siliceous film with minimal defects, and a curing composition comprising the...
US-9,793,108 Interconnect integration for sidewall pore seal and via cleanliness
A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the...
US-9,793,107 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen,...
US-9,793,106 Reliability improvement of polymer-based capacitors by moisture barrier
It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water...
US-9,793,105 Fabricating method of fin field effect transistor (FinFET)
The invention provides a fabricating method of a FinFET, comprising: providing a substrate having fin structures; depositing an dielectric layer on the...
US-9,793,104 Preparing a semiconductor surface for epitaxial deposition
Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the...
US-9,793,103 Epoxy-based composition, adhesive film, dicing die-bonding film and semiconductor device
Provided are an epoxy composition, an adhesive film, a dicing die bonding film and a semiconductor device using the same. Specifically, the epoxy composition...
US-9,793,102 Semiconductor manufacturing apparatus and semiconductor manufacturing method
In one embodiment, a semiconductor manufacturing apparatus includes a stage provided in a chamber, and a conveying module configured to convey a plurality of...
US-9,793,101 Method and apparatus for injection of ions into an electrostatic ion trap
A method of injecting ions into an electrostatic trap, comprising: generating ions in an ion source; transporting the ions from the ion source to an ion store...
US-9,793,100 Portable plasma based diagnostic apparatus and diagnostic method
A portable plasma based diagnostic apparatus comprising a plasma source for producing energy projectiles at atmospheric pressure, a mass analyzer, a sampling...
US-9,793,099 Magnetic material sputtering target and manufacturing method thereof
Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a...
US-9,793,098 Low pressure arc plasma immersion coating vapor deposition and ion treatment
A vacuum coating and plasma treatment system includes a magnetron cathode with a long edge and a short edge. The magnetic pole of the magnetron results in an...
US-9,793,097 Time varying segmented pressure control
An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing...
US-9,793,096 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion...
US-9,793,095 Microwave surface-wave plasma device
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous...
US-9,793,094 Extraction electrode
The extraction electrode has a pair of sub-assemblies that define a gap. Each sub-assembly has a suppression plate and ground plate secured together in spaced...
US-9,793,093 System for manufacturing semiconductor device
A semiconductor device manufacturing system includes: a PL evaluation apparatus that evaluates wavelengths of photoluminescent light produced by individual...
US-9,793,092 Charged particle beam apparatus and processing method
A charged particle beam apparatus has a charged particle beam column configured to irradiate a charged particle beam, and a controller configured to control the...
US-9,793,091 Image generation apparatus
There is disclosed an image generation apparatus which is capable of generating a clear image by reducing vibration of the image. The image generation apparatus...
US-9,793,090 E-beam inspection apparatus and method of using the same on various integrated circuit chips
The present invention discloses an e-beam inspection tool, and an apparatus for detecting defects. In one aspect is described an apparatus for detecting defects...
US-9,793,089 Electron emitter device with integrated multi-pole electrode structure
A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more...
US-9,793,088 Two-stage dodecapole aberration corrector for charged-particle beam
An aberration corrector has two stages of dodecapole (12-pole) elements each of which has first through twelfth poles arranged in this order. Exciting coils of...
US-9,793,087 Techniques and apparatus for manipulating an ion beam
A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial...
US-9,793,086 SiC coating in an ion implanter
An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are...
US-9,793,085 Focused ion beam apparatus
A focused ion beam apparatus is equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously...
US-9,793,084 Floating intermediate electrode configuration for downhole nuclear radiation generator
Systems, methods, and devices with improved electrode configuration for downhole nuclear radiation generators are provided. For example, one embodiment of a...
US-9,793,083 Microstructured surface with low work function
A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each...
US-9,793,082 Method of manufacturing flat panel display for heating sealing unit with different laser beams
A method of manufacturing a flat panel display is disclosed. In one aspect, the method includes forming a plurality of display elements over a first substrate...
US-9,793,081 Exchange operating mechanism
A changeable mechanism includes a contact support, a connecting rod, a connecting shaft, a cantilever, and a changeable component. The contact support has a...
US-9,793,080 Electromechanical power switch integrated circuits and devices and methods thereof
An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at...
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