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Patent # Description
US-9,799,736 High acceptor level doping in silicon germanium
A gallium-doped sacrificial epitaxial or polycrystalline germanium layer is formed on a silicon germanium substrate having a high percentage of germanium...
US-9,799,735 Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate
Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon...
US-9,799,734 Semiconductor device and manufacturing method for same, as well as power conversion device
Provided is a vertical MOSFET in which a conduction deterioration phenomenon is prevented during a current return operation and an on-voltage is low during the...
US-9,799,733 Semiconductor device having a junction portion contacting a schottky metal
A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum...
US-9,799,731 Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
Power is inverted using double-base-contact bidirectional bipolar transistors in a three-level-inverter topology. The transistors not only switch to synthesize...
US-9,799,730 FINFETs with high quality source/drain structures
A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional...
US-9,799,729 Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary...
A method of manufacturing a semiconductor device includes: forming field electrode structures extending in a direction vertical to a first surface in a...
US-9,799,728 Three-dimensional transistor and fabrication method thereof
The disclosed subject matter provides a method for fabricating a three-dimensional transistor. The method includes forming an active region and two isolation...
US-9,799,727 Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability
An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such...
US-9,799,726 Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
A HEMT device comprising a M-plane III-Nitride material substrate, a p-doped epitaxial layer of III-Nitride material grown on said substrate; a recess etched in...
US-9,799,725 IGBT having a deep superjunction structure
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a...
US-9,799,724 Capacitor structures, decoupling structures and semiconductor devices including the same
Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting...
US-9,799,723 Semiconductor device and method for forming same
A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers...
US-9,799,722 Inductive component and package structure thereof
An inductive component and package structure is provided, comprising a magnetic body having a top surface and a bottom surface, wherein a plurality of...
US-9,799,721 Integrated magnetic core inductor and methods of fabrications thereof
A method of forming a semiconductor device includes forming a lower coil segment in a first dielectric layer over a substrate, forming a second dielectric layer...
US-9,799,720 Inductor heat dissipation in an integrated circuit
The present invention relates generally to semiconductor structures and methods of manufacturing and, more particularly, to improving heat dissipation of...
US-9,799,719 Active-matrix touchscreen
An active-matrix touchscreen includes a substrate, a system controller, and a plurality of spatially separated independent touch elements disposed on the...
US-9,799,718 Display apparatus
A display apparatus includes a plurality of pixels disposed over a substrate. Each pixel includes a scan line extending along a first direction, a data line...
US-9,799,717 Organic light emitting diode display
An organic light emitting diode display is disclosed that includes a shield layer on a substrate; a semiconductor layer on the shield layer; a gate insulating...
US-9,799,716 Light-emitting device and electronic device
An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for...
US-9,799,715 Display panel, manufacturing method therefor, and display apparatus
A display panel, comprising an array substrate (1) having a plurality of sub pixels (15), wherein the array substrate (1) comprises: a thin film transistor...
US-9,799,714 Display device having light-emitting elements
A display device includes a plurality of light-emitting elements aligned on a TFT substrate in a formation of a matrix. The plurality of light-emitting elements...
US-9,799,713 Organic light-emitting diode display with barrier layer
A display may have an array of pixels formed from organic light-emitting diodes and thin-film transistor circuitry. A planarization layer may be interposed...
US-9,799,712 Method of manufacturing light-emitting display device with reduced pressure drying
A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate for each pixel of a plurality of...
US-9,799,711 Organic EL display panel and organic EL display device
An organic EL display panel includes plural streaks of first partition walls juxtaposed on the upper side of an underlying layer in such a manner that each of...
US-9,799,710 Organic light emitting display device and method for fabricating the same
An organic light emitting display device, and a method for manufacturing the organic light emitting display device are discussed. The organic light emitting...
US-9,799,709 Pixel unit, method of manufacturing the same and display device
The present invention discloses a pixel unit, a method of manufacturing the same and a display device. The pixel unit comprises an anode layer, a pixel...
US-9,799,708 Organic light emitting diode display
An organic light emitting diode display includes a stretchable substrate, a plurality of pixel forming plates, first and second pixels, and a cut-out groove....
US-9,799,707 Memory structures and arrays
Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes,...
US-9,799,706 Resistive random access memory device embedding tunnel insulating layer and memory array using the same and...
A resistive random access memory device is provided with a tunneling insulator layer between a resistance change layer and a bottom electrode. Thus, it is...
US-9,799,705 Semiconductor device and method of making the same
The present invention provides a semiconductor device. The semiconductor device includes a contact structure disposed in a first dielectric layer, a second...
US-9,799,704 Electronic device and method for fabricating the same
An electronic device with improved variable resistance characteristics and a method for fabricating the same are provided. In an embodiment of the disclosed...
US-9,799,703 Linear LED lighting fixture with improved viewing angle
Disclosed is an LED lighting fixture that includes a linear lighting mounting member having a first longitudinal axis and a plurality of adjacent multicolor...
US-9,799,702 Deep trench isolation structure and method of forming same
Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a...
US-9,799,701 Image sensor and method for manufacturing same
Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a substrate, and which includes a...
US-9,799,700 Infrared sensor
An infrared sensor according to an embodiment includes a housing, a detector, a lid, and a light shielding film. The detector is mounted on the bottom surface...
US-9,799,699 High near infrared sensitivity image sensor
An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to...
US-9,799,698 Solid-state imaging device having improved light-collection, method of manufacturing the same, and electronic...
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is...
US-9,799,697 Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed...
US-9,799,696 Isolation structure in photodiode
An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material. The image sensor also includes a transfer gate...
US-9,799,695 Semiconductor device and method of manufacturing the same, and electronic apparatus
A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a...
US-9,799,694 Backside through vias in a bonded structure
A wafer thinning system and method are disclosed that includes grinding away substrate material from a backside of a semiconductor device. A current change is...
US-9,799,693 Photodetector and method of forming the photodetector on stacked trench isolation regions
Disclosed are structures and methods of forming the structures so as to have a photodetector isolated from a substrate by stacked trench isolation regions. In...
US-9,799,692 Solid-state imaging apparatus
A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member...
US-9,799,691 Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and...
Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor...
US-9,799,690 Solid-state image pickup device
A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a...
US-9,799,689 Light absorption apparatus
A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light...
US-9,799,688 Array substrate with uniform charge distribution, method for manufacturing the same and display device
An array substrate includes a display area and a peripheral area adjacent to the display area; the display area includes a plurality of pixel units; each pixel...
US-9,799,687 Method for manufacturing active-matrix display panel, and active-matrix display panel
Manufacturing method including forming, over substrate, TFT layer, planarization layer, and display element in this order. Forming of TFT layer involves forming...
US-9,799,686 Millimetre wave integrated circuits with thin film transistors
MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive...
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