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Patent # Description
US-9,799,532 CMP polishing solution and polishing method
The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8,...
US-9,799,531 Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of...
Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with...
US-9,799,530 Method of selectively removing silicon nitride and etching apparatus thereof
A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying...
US-9,799,529 Method of planarizing a film layer
A method of fabricating a semiconductor device is disclosed. The method includes forming a first flowable-material (FM) layer over a substrate. A top surface of...
US-9,799,528 Apparatus and package structure of optical chip
An apparatus includes a package structure. The package structure includes a chip, a conductive structure over the chip, a molding structure surrounding and...
US-9,799,526 Liquid composition and etching method for etching silicon substrate
An etching method includes etching a silicon substrate with a liquid composition containing an alkaline organic compound, water, and a boron compound with a...
US-9,799,525 Semiconductor device, related manufacturing method, and related electronic device
A semiconductor device may include the following elements: a first doped region; a second doped region, which contacts the first doped region; a third doped...
US-9,799,524 Extended drain MOS device for FDSOI devices
A field effect transistor (FET) with raised source/drain region of the device so as to constrain the epitaxial growth of the drain region. The arrangement of...
US-9,799,523 Methods of forming a semiconductor device by thermally treating a cleaned surface of a semiconductor substrate...
The present disclosure relates to methods for forming a high-k gate dielectric, the methods comprising the steps of providing a semiconductor substrate,...
US-9,799,522 Aluminum oxide passivation and damage removal for solar cells
The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions and passivation layers...
US-9,799,521 Semiconductor device having areas with different conductivity types and different doping
A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure...
US-9,799,520 Parasitic channel mitigation via back side implantation
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates....
US-9,799,519 Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer
A dielectric layer is formed on a silicon substrate. A liner layer is formed on the dielectric layer. A conductive metal layer is formed on the liner layer. A...
US-9,799,517 Apparatus and method for light-irradiation heat treatment
Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash...
US-9,799,516 Wafer structure for electronic integrated circuit manufacturing
A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device...
US-9,799,515 Silicon carbide semiconductor device and method of manufacturing the same
A silicon carbide semiconductor device includes a silicon carbide layer having a first main surface and a second main surface opposite to the first main...
US-9,799,514 Protecting, oxidizing, and etching of material lines for use in increasing or decreasing critical dimensions of...
A method includes, for example, a starting semiconductor structure comprising a plurality of material lines disposed over a hard mask, and the hard mask...
US-9,799,513 Localized elastic strain relaxed buffer
A strain relaxed buffer layer is fabricated by melting an underlying layer beneath a strained semiconductor layer, which allows the strained semiconductor layer...
US-9,799,512 Semiconductor substrate structures and methods for forming the same
A semiconductor substrate structure includes a seed layer on a substrate, a first gallium nitride layer on the seed layer, and a patterned first hard mask layer...
US-9,799,511 Methods for depositing low k and low wet etch rate dielectric thin films
Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas...
US-9,799,510 Method for producing metal oxide film and method for producing transistor
Provided is a technology for efficiently obtaining a metal oxide film having good adhesiveness. A method of producing a metal oxide film includes: an...
US-9,799,509 Cyclic aluminum oxynitride deposition
A process for depositing aluminum oxynitride (AlON) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum...
US-9,799,508 Process of forming nitride semiconductor device
A process of forming a nitride semiconductor device is disclosed. The process includes steps of (a) implanting impurities into a portion of nitride...
US-9,799,507 Devices and methodologies to clean wafers with solvent
Disclosed are devices and methodologies for cleaning wafers in wafer processing operations such as solvent cleaning. In an example situation, a wafer that has...
US-9,799,506 Breakdown voltage measuring method and method for manufacturing semiconductor device
A breakdown voltage measuring method includes the steps of measuring a breakdown voltage of a semiconductor element in a state where a surface of the...
US-9,799,505 Method and a processing device for processing at least one carrier
According to various embodiments, a method may include: filling a chamber and a tube coupled to the chamber with a first liquid, the tube extending upwards from...
US-9,799,504 Ion source, quadrupole mass spectrometer and residual gas analyzing method
In order to attain a main objective of the present invention to provide an ion source capable of efficiently extracting ions, the ion source is configured to...
US-9,799,503 Traveling-well ion guides and related systems and methods
An ion guide generates a radio frequency (RF) field to radially confine ions to an ion beam along a guide axis as the ions are transmitted through the ion...
US-9,799,502 Aperture gas flow restriction
A mass spectrometer is disclosed comprising two vacuum chambers maintained at different pressures. The two vacuum chambers are interconnected by a differential...
US-9,799,501 Sample mounting plate
A sample mounting plate has: a substrate made of alumina ceramic which exhibits white; and a cover layer which is laminated so as to cover the front surface of...
US-9,799,500 Tandem mass spectrometer and tandem mass spectrometry method
The invention relates to a tandem mass spectrometer comprising an ionization source that can produce ions; a mass analyzer comprising an ion trap arranged in...
US-9,799,499 Mass spectrometric method, mass spectrometer, and mass spectrometric data processing program
In a mass spectrometric method of the invention, a mass spectrometer (2) is used having a mass separation unit (231, 234) before and after a collision cell...
US-9,799,498 Magnetron sputtering coating device, a nano-multilayer film, and the preparation method thereof
A magnetron sputtering coating device includes a deposition chamber, sputtering cathodes, a rotating stand within the deposition chamber, a support platform on...
US-9,799,497 Patterned processing kits for material processing
Systems and methods are provided for material processing. An example apparatus includes a process-kit component containing a first groove and a second groove....
US-9,799,496 Edge exclusion control with adjustable plasma exclusion zone ring
Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower...
US-9,799,495 Plasma processing apparatus and plasma processing method
A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The...
US-9,799,494 Energetic negative ion impact ionization plasma
A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected...
US-9,799,493 Electrical transformer
Systems and methods for managing electric power are disclosed. In an aspect, a system can comprise plasma disposed in a housing and a pair of helical electrodes...
US-9,799,492 Textured silicon liners in substrate processing systems
Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon...
US-9,799,491 Low electron temperature etch chamber with independent control over plasma density, radical composition and ion...
The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma...
US-9,799,490 Charged particle beam processing using process gas and cooled surface
A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature...
US-9,799,489 Exposure apparatus
The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on...
US-9,799,488 Method and apparatus for neutral beam processing based on gas cluster ion beam technology
A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or...
US-9,799,487 Bi-directional double-pass multi-beam writing
To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image...
US-9,799,486 Charged particle beam apparatus for measuring surface potential of a sample
In a charged particle beam apparatus that applies a retarding voltage to a sample through a contact terminal and executes measurement or inspection of a surface...
US-9,799,485 Particle beam system and method for operating a particle optical unit
A method for operating a multi-beam particle optical unit comprises includes providing a first setting of effects of particle-optical components, wherein a...
US-9,799,484 Charged particle source
This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field...
US-9,799,483 Charged particle beam device and detection method using said device
In the present invention, a charged particle beam device has a charged particle source (1), a first condenser lens (4) arranged downstream from the charged...
US-9,799,482 Device manufacturing apparatus and manufacturing method of magnetic device using structure to pass ion beam
A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion...
US-9,799,481 Methods and apparatus for ion sources, ion control and ion measurement for macromolecules
Disclosed are methods, apparatus, systems, processes and other inventions relating to: ion sources with controlled electro-pneumatic superposition, ion source...
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