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Patent # Description
US-9,806,173 Channel-last replacement metal-gate vertical field effect transistor
A method of making a vertical transistor includes forming a doped source on a substrate; depositing a sacrificial gate material on the source; forming a trench...
US-9,806,172 Vertical tunneling field-effect transistor cell and fabricating the same
A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of...
US-9,806,171 Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having...
An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the...
US-9,806,170 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain...
A method of forming matched PFET/NFET spacers with differential widths for SG and EG structures and a method of forming differential width nitride spacers for...
US-9,806,169 Semiconductor devices having a gate stack
Semiconductor devices and methods for manufacturing the same are provided. In one embodiment, the method may include: forming a first shielding layer on a...
US-9,806,168 Semiconductor devices and methods for fabricating the same
The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding...
US-9,806,167 Method for manufacturing silicon carbide semiconductor device
The steps of preparing a silicon carbide layer having a main surface, forming on the main surface, a first mask layer located on a first region to be a channel...
US-9,806,166 Semiconductor devices and methods of fabricating the same
A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction...
US-9,806,165 Manufacturing method of semiconductor device and semiconductor device
The thickness of an insulating film, which will serve as an offset spacer film and is formed in an offset monitor region, is managed as the thickness of an...
US-9,806,164 Controlled synthesis and transfer of large area heterostructures made of bilayer and multilayer transition...
Embodiments are presented herein that provide a TMD system wherein the first layered material is made of heterobilayers or multilayers with semiconducting...
US-9,806,163 Semiconductor device having an nMOS SGT and a pMOS SGT
A semiconductor device includes first and second fin-shaped silicon layers on a substrate, each corresponding to the dimensions of a sidewall pattern around a...
US-9,806,162 Semiconductor device having a plurality of transistors connected in parallel
A semiconductor device SD includes a substrate SUB, a plurality of gate electrodes GE, a gate pad GEP, and gate interconnects GINC. The plurality of gate...
US-9,806,161 Integrated circuit structure having thin gate dielectric device and thick gate dielectric device
One aspect of the disclosure relates to and integrated circuit structure and methods of forming the same. The integrated circuit structure may include: a thin...
US-9,806,160 Power integrated devices, electronic devices including the same, and electronic systems including the same
A power integrated device includes a semiconductor layer having first conductivity, a source region and a drain region each having second conductivity and...
US-9,806,159 Tuned semiconductor amplifier
Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two...
US-9,806,158 HEMT-compatible lateral rectifier structure
The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier device. In some embodiments, the rectifier...
US-9,806,157 Structure and method for transient voltage suppression devices with a two-region base
A transient voltage suppression (TVS) device and a method of forming the device are provided. The TVS device includes a first layer of wide band-gap...
US-9,806,156 Laminated body and electronic device
A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the...
US-9,806,155 Split fin field effect transistor enabling back bias on fin type field effect transistors
A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further...
US-9,806,154 FinFET structure and method for manufacturing thereof
Present disclosure provides a FinFET structure, including a fin and a gate surrounding a first portion of the fin. A dopant concentration in the first portion...
US-9,806,153 Controlling channel length for vertical FETs
A vertical-type semiconductor device includes a first source/drain (S/D) region on an upper surface of a semiconductor substrate. A channel region is on an...
US-9,806,152 Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
An insulated gate turn-off thyristor has a layered structure including a p+ layer (e.g., a substrate), an n-epi layer, a p-well, vertical insulated gate regions...
US-9,806,151 Biosensor based on heterojunction bipolar transistor
In one example, a sensor includes a heterojunction bipolar transistor and component sensing surface coupled to the heterojunction bipolar transistor via an...
US-9,806,150 High voltage device and method of fabricating the same
A high voltage device includes a substrate, a first LDMOS transistor and a second LDMOS transistor disposed on the substrate. The first LDMOS transistor...
US-9,806,149 Semiconductor device and method of manufacturing the semiconductor device
A MISFET has a threshold voltage that is not undesirably increased due to channel narrowing of the MISFET, and the MISFET is reduced in size and increased in...
US-9,806,148 Device isolator with reduced parasitic capacitance
Isolator structures for an integrated circuit with reduced effective parasitic capacitance. Disclosed embodiments include an isolator structure with parallel...
US-9,806,147 Semiconductor device
In a semiconductor device, a p.sup.+ back gate region (PBG) is arranged in a main surface (S1) between first and second portions (P1, P2) of an n.sup.+ source...
US-9,806,146 Semiconductor device
A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well...
US-9,806,145 Passive chip device and method of making the same
A passive chip device includes a chip body, a conductive coil and a surface-mount contact unit. The chip body is in the form of a single piece, and has two...
US-9,806,144 Solenoid inductor in a substrate
Some implementations provide an integrated device (e.g., semiconductor device) that includes a substrate and an inductor in the substrate. In some...
US-9,806,143 Organic light-emitting device
The present specification relates to an organic light emitting device.
US-9,806,142 Display device
A display device comprising: a substrate with a display region and a border region; a first metal layer disposed on the substrate; a first insulating layer...
US-9,806,141 Organic light emitting display device having light blocking layer connecting adjacent subpixels and method for...
An organic light emitting display device has a display panel including a first subpixel, a second subpixel, a data line, and sensing lines. The sensing lines...
US-9,806,139 Light emitting element display device
A light emitting element display device includes light emitting elements that emit light by allowing a current to flow in a plurality of pixels arranged in a...
US-9,806,138 Display device
A non-breakable display device, electronic appliance, or lighting device is provided. A bendable display device in which a first flexible substrate and a second...
US-9,806,137 Display substrates, methods of manufacturing the same and display devices including the same
A display substrate includes a base substrate, a switching device on the base substrate and an alignment pattern. The switching device includes an active...
US-9,806,136 Organic light emitting diode display device and method for repairing organic light emitting diode display
An organic light emitting diode (OLED) display includes a light-emitting region including an organic emission layer and a non-light-emitting region neighboring...
US-9,806,135 Light emitting device and electronic apparatus
A light emitting device according to the invention includes a first pixel electrode; a second pixel electrode; an organic layer including a light emitting...
US-9,806,134 Display apparatus, method of image display and touch sense thereof
The present invention discloses a display apparatus, comprising: a control unit, employed for setting an image display period and a touch sense period and...
US-9,806,133 Organic light emitting diode display
An organic light emitting diode (OLED) display includes a substrate, a thin film transistor (TFT) on the substrate, an OLED connected to the TFT and configured...
US-9,806,132 Organic X-ray detector with barrier layer
An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an...
US-9,806,131 Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit...
US-9,806,130 Memory element with a reactive metal layer
A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first...
US-9,806,129 Cross-point memory and methods for fabrication of same
The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same....
US-9,806,128 Interposers for integrated circuits with multiple-time programming and methods for manufacturing the same
An interposer for an integrated circuit includes a first side and a second side. The interposer includes a substrate and a via disposed in the substrate. A...
US-9,806,127 Micro wall light emitting diodes
Embodiments related to light emitting diodes having an electron transport layer core with first and second opposite sidewalls extending from a proximal end of...
US-9,806,126 Method for manufacturing image capturing device and image capturing device
An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed. Next,...
US-9,806,125 Compositionally graded photodetectors
An ultraviolet photodetector for a sensor device includes a film deposited on a substrate. The film includes a compositionally graded magnesium-zinc oxide...
US-9,806,124 Solid state image pickup apparatus and method for manufacturing the same
When forming a hollow portion between each color filter, in order to realize the formation of the hollow portions with a narrower width, a plurality of light...
US-9,806,123 Image sensor and manufacturing method thereof
Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric...
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