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Patent # Description
US-9,812,618 Epoxy resin composition and light-emitting apparatus using the same
An epoxy resin composition provided according to one embodiment of the present invention includes: a triazine derivative epoxy compound; a siloxane compound...
US-9,812,617 Light-emitting device and image display apparatus
A light-emitting device includes a light-emitting element configured to emit blue light, a first wavelength conversion member containing a Mn.sup.4+-activated...
US-9,812,616 Light-emitting diode
The present invention relates to a light-emitting diode having enhanced liability. More particularly, a light-emitting diode has enhanced liability in a...
US-9,812,615 Method of optimizing the quantum efficiency of a photodiode
A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon...
US-9,812,614 Light-emitting device
A light-emitting device is provided, including: a substrate; a reflective layer disposed on the substrate; a patterned contact layer disposed on the reflective...
US-9,812,613 Integrated LED light-emitting device and fabrication method thereof
A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface;...
US-9,812,612 Solid state light emitting device and method of manufacturing a solid state light emitting device
A solid state light emitting device includes a light emitting stack (20), a metallization (30), comprising a guard layer (36) of metal, and a dielectric layer...
US-9,812,611 Nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting...
There is provided a nitride semiconductor ultraviolet light-emitting element capable of efficiently releasing a waste heat generated in an ultraviolet light...
US-9,812,609 Semiconductor device including oxide current aperture
Embodiments regard a semiconductor device including an oxide current aperture. An embodiment of a semiconductor device includes an N-type semiconductor layer;...
US-9,812,608 Deep ultraviolet light-emitting diode chip and package structure containing the same
A deep UV LED chip includes a light-emitting unit, an electrode unit, an electron blocking layer, and an optical layer. The electron blocking layer is disposed...
US-9,812,607 Method for manufacturing nitride semiconductor template
There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer in a thickness of not...
US-9,812,606 Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and...
Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one...
US-9,812,605 Nano-pillar-based biosensing device
In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of...
US-9,812,604 Photosensing device with graphene
A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the...
US-9,812,603 Photosensing device with graphene
A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the...
US-9,812,602 Light detection device
A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer...
US-9,812,601 Solar celll
A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first...
US-9,812,600 Use of UV-radiation-hardenable polyurethane resins for producing solar laminates
The present invention relates to the use of a radiation-hardenable resin composition for producing solar laminates, a method for creating a solar laminate using...
US-9,812,599 Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material,...
US-9,812,598 Metal-contact-free photodetector
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has...
US-9,812,597 Optical sensor and manufacturing method thereof
Some embodiments of the present disclosure provide an optical sensor. The optical sensor includes a semiconductive substrate. A light sensing region is on the...
US-9,812,596 Photoelectric device and electronic apparatus including the same
Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the...
US-9,812,595 All-wavelength (VIS-LWIR) transparent electrical contacts and interconnects and methods of making them
A method for fabricating an optically transparent conductor including depositing a plurality of metal nanowires on a substrate, annealing or illuminating the...
US-9,812,594 Solar cell and method of manufacture thereof, and solar cell module
Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first...
US-9,812,593 Solar cell and preparing method of the same
Disclosed are a solar cell and preparing method of the same. The solar cell includes a back electrode layer on a support substrate, a molybdenum oxide layer on...
US-9,812,592 Metal-foil-assisted fabrication of thin-silicon solar cell
One embodiment relates to a method of fabricating a solar cell. A silicon lamina is cleaved from the silicon substrate. The backside of the silicon lamina...
US-9,812,591 Self-balancing position sensitive detector
A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a...
US-9,812,590 Bifacial solar cell module with backside reflector
A bifacial solar cell module includes solar cells that are protected by front side packaging components and backside packaging components. The front side...
US-9,812,589 Semiconductor device with schottky barrier diode
A semiconductor device according to an embodiment includes a first metal layer, a second metal layer, an n-type first SiC region provided between the first...
US-9,812,588 Magnetic field sensor integrated circuit with integral ferromagnetic material
A magnetic field sensor includes a lead frame, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second...
US-9,812,587 Semiconductor device and manufacturing method thereof
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A...
US-9,812,586 Transistor with curved active layer
In a cross section in a channel width direction, a semiconductor layer includes a first region of which one end portion is in contact with an insulating layer...
US-9,812,585 Semiconductor device
In a semiconductor device including an oxide semiconductor film, defects in the oxide semiconductor film are reduced. In addition, the electrical ...
US-9,812,584 Semiconductor device
An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor...
US-9,812,583 Semiconductor device
A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The...
US-9,812,582 Semiconductor device
A semiconductor device in which a first oxide film, a second oxide film, and a third oxide film are stacked over an insulating surface is provided. In the...
US-9,812,581 Semiconductor device and method for manufacturing same
A semiconductor device (1001) includes an oxide semiconductor layer (7) and a conductor layer (13a, 13b, 13c, 13s) supported on a substrate (1). The oxide...
US-9,812,580 Deep trench active device with backside body contact
An integrated circuit may include a gate, having gate fingers. The integrated circuit may also include a body, having semiconductor pillars interlocking with...
US-9,812,579 Thin film transistor, method of fabricating the same, array substrate and display device
A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film...
US-9,812,578 Thin film transistor and display device using the same
A thin film transistor includes, an insulating substrate, a gate electrode provided on an upper surface of the insulating substrate, a gate insulating film...
US-9,812,576 Semiconductor device and manufacturing method thereof
A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The...
US-9,812,575 Contact formation for stacked FinFETs
FinFET structures include a stacked fin architecture formed on a semiconductor substrate. The stacked fin architecture includes a template semiconductor layer...
US-9,812,574 Techniques and configurations for stacking transistors of an integrated circuit device
Embodiments of the present disclosure provide techniques and configurations for stacking transistors of a memory device. In one embodiment, an apparatus...
US-9,812,573 Semiconductor structure including a transistor having stress creating regions and method for the formation thereof
A method includes providing a semiconductor structure including a substrate, a gate structure over the substrate and a sidewall spacer adjacent the gate...
US-9,812,572 Reacted conductive gate electrodes and methods of making the same
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material....
US-9,812,571 Tensile strained high percentage silicon germanium alloy FinFETs
A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial...
US-9,812,570 Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is...
US-9,812,569 Semiconductor device and fabricating method thereof
A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate; a source/drain region...
US-9,812,568 Ionic barristor
A Schottky barrier device is provided herein that includes a TMD layer on a substrate, a graphene layer on the TMD layer, an electrolyte layer on the TMD layer,...
US-9,812,567 Precise control of vertical transistor gate length
Transistor and methods of forming the same include forming a channel fin on a bottom source/drain region. A dielectric fill is formed around the channel fin...
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