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Patent # Description
US-9,818,791 Stacked image sensor
A stacked image sensor includes a first plurality of photodiodes, including a first photodiode and a second photodiode, disposed in a first semiconductor...
US-9,818,790 Solid-state imaging device and manufacturing method thereof
A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P.sup.+-type pinning layer that is located in the P-well so as to be...
US-9,818,789 Solid-state imaging device and manufacturing method thereof
A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P.sup.+-type pinning layer that is located in the P-well so as to be...
US-9,818,788 Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor...
A method for manufacturing a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor with a vertical transfer gate structure...
US-9,818,787 Imaging element and method of manufacturing the same
A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an...
US-9,818,786 Imaging device including wirings that overlap photoelectric conversions units
A solid-state imaging device including a semiconductor substrate; plural photoelectric conversion units formed side by side on the semiconductor substrate to...
US-9,818,785 Semiconductor device, manufacturing method thereof, and electronic apparatus
A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a...
US-9,818,784 Semiconductor device and electronic appliance
The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the...
US-9,818,783 Solid-state image pickup apparatus and electronic apparatus
Provided is a solid-state image pickup apparatus including a crosstalk suppression mechanism included in each pixel arranged in a pixel array, the crosstalk...
US-9,818,782 Image sensor and method for fabricating the same
An image sensor includes: a first inter-layer dielectric layer formed over a front side of a substrate including photoelectric conversion regions; isolation...
US-9,818,781 Image pixel including a plurality of trenches, image sensor including the same, and image processing system...
An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate...
US-9,818,780 Camera module
In a camera module, a planar part, which is for mitigating deformation of the surface of a second insulating portion on which an imaging device is mounted, is...
US-9,818,779 CMOS image sensor structure
A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The...
US-9,818,778 Solid-state image sensor and its manufacturing method, curable composition for forming infrared cut-off...
A solid-state image sensor includes a semiconductor substrate, photoelectric conversion elements arranged on a light receiving surface side of the semiconductor...
US-9,818,777 Hybrid analog-digital pixel implemented in a stacked configuration
A hybrid analog-digital pixel circuit is fabricated on two wafers. A first wafer includes the analog pixel circuitry and a second wafer includes the digital...
US-9,818,776 Integrating bond pad structures with light shielding structures on an image sensor
An imaging system may include an image sensor that may be a backside illuminated (BSI) image sensor. The BSI sensor may be bonded to an inactive silicon...
US-9,818,774 Fabrication method of pixel structure
A fabrication method of a pixel structure is provided. The fabrication method includes: forming a gate electrode, a gate insulating layer, an active layer, a...
US-9,818,773 Supporting device, method for manufacturing thin film transistor array substrate and method for manufacturing...
A supporting device includes a main body and a ring-shaped glue layer. The main body includes a top surface and a bottom surface opposite to the top surface....
US-9,818,772 Display device and method for manufacturing the same
A display device and a method for manufacturing the same are provided. The display device includes a first substrate, a second substrate and a light curable...
US-9,818,771 Display device
A display device made of a TFT substrate and a driver IC is configured to eliminate bad connection between them. On the driver IC connected to the TFT...
US-9,818,770 Flexible micro-electronics circuits with crack mitigation
An electronic circuit device that includes a plurality of electrical circuits disposed on a support substrate, such as an electronic display device, includes...
US-9,818,769 Array substrate, manufacturing method thereof, display panel, and display device
An array substrate, a manufacturing method thereof, a display panel and a display device are disclosed. The manufacturing method includes: forming a first metal...
US-9,818,768 Array substrate for display device
The array substrate for display device includes: a substrate; a signal line disposed on the substrate; a first color filter disposed on one side of the signal...
US-9,818,767 Display device having jumping structure with connection electrode and method for fabricating the same
Disclosed is a display device that may include a pixel electrode formed on source and drain electrodes, the pixel electrode electrically connected with the...
US-9,818,766 Thin film transistor and organic light emitting diode display including the same
A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor...
US-9,818,765 Displays with silicon and semiconducting oxide thin-film transistors
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display...
US-9,818,764 Flexible display device with side crack protection structure and manufacturing method for the same
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size...
US-9,818,763 Display device and method for manufacturing display device
A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film,...
US-9,818,762 Arrangement of passivation layers in a pixel unit of an array substrate and display device
An array substrate and a display device are disclosed. The array substrate includes: a TFT, a pixel electrode layer driven by the TFT, a data line, a first...
US-9,818,761 Selective oxidation for making relaxed silicon germanium on insulator structures
Methods and devices are provided to fabricate semiconductor devices with, e.g., SiGe-on-insulator structures. For example, a method for fabricating a...
US-9,818,760 Memory structure, method of operating the same, and method of manufacturing the same
A memory structure includes stacks, memory layers, channel layers, dielectric layers, and first conductive lines. Each stack includes a group of alternating...
US-9,818,759 Through-memory-level via structures for a three-dimensional memory device
A three dimensional NAND memory device includes word line driver devices located on or over a substrate, an alternating stack of word lines and insulating...
US-9,818,758 Three-dimensional semiconductor device and manufacturing method thereof
There are provided a 3-D semiconductor device and a manufacturing method thereof. The 3-D semiconductor device includes a substrate extending along a first...
US-9,818,757 Semiconductor device
This semiconductor device comprises a plurality of first conductive layers arranged above a substrate in a first direction intersecting an upper surface of the...
US-9,818,756 Methods of forming a charge-retaining transistor having selectively-formed islands of charge-trapping material...
A charge-retaining transistor includes a control gate and an inter-gate dielectric alongside the control gate. A charge-storage node of the transistor includes...
US-9,818,755 Split-gate flash cell formed on recessed substrate
A semiconductor device including a non-volatile memory (NVM) cell and method of making the same are disclosed. The semiconductor device includes a metal-gate...
US-9,818,754 Semiconductor memory device and method for manufacturing same
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, and a columnar portion. The stacked body includes a first...
US-9,818,753 Semiconductor memory device and method for manufacturing the same
In general, according to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, a first sub-conductive...
US-9,818,752 Memory metal scheme
A method of fabricating a memory includes forming a first portion of a first line in a first metal layer, forming a first portion of a second line in the first...
US-9,818,751 Methods of forming buried vertical capacitors and structures formed thereby
Methods of forming passive elements under a device layer are described. Those methods and structures may include forming at least one passive structure, such as...
US-9,818,750 Semiconductor device
Provided is a semiconductor device capable of holding data for a long period. The semiconductor device includes first to third transistors, a capacitor, and a...
US-9,818,749 Storage element, storage device, and signal processing circuit
A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage...
US-9,818,748 Semiconductor device and fabricating method thereof
A semiconductor device is provided. A substrate includes a first region and a second region. A first wire pattern, extending in a first direction, is formed at...
US-9,818,747 Super-self-aligned contacts and method for making the same
A number of first hard mask portions are formed on a dielectric layer to vertically shadow a respective one of a number of underlying gate structures. A number...
US-9,818,746 Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate
A semiconductor device includes a first transistor formed on a substrate, the first transistor including a channel region positioned on the substrate; a second...
US-9,818,745 Semiconductor devices having fin field effect transistor (FinFET) structures and manufacturing and design...
Semiconductor devices and manufacturing and design methods thereof are disclosed. In one embodiment, a semiconductor device includes an active FinFET disposed...
US-9,818,744 Leakage current suppression methods and related structures
A method and structure for suppressing band-to-band tunneling current in a semiconductor device having a high-mobility channel material includes forming a...
US-9,818,743 Power semiconductor device with contiguous gate trenches and offset source trenches
Disclosed is a power semiconductor device that includes a plurality of source trenches and adjacent source regions. The plurality of source trenches extend from...
US-9,818,742 Semiconductor device isolation using an aligned diffusion and polysilicon field plate
An isolation structure prevents inter-device and intra-device leakage in first and second adjacent semiconductor devices in a substrate. The first and second...
US-9,818,741 Structure and method to prevent EPI short between trenches in FINFET eDRAM
After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench...
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