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Patent # Description
US-9,825,153 Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured...
A method of manufacturing a semiconductor device includes forming a preliminary fin-type active pattern extending in a first direction, forming a device...
US-9,825,151 Method for preparing substrate using germanium condensation process and method for manufacturing semiconductor...
The present invention suggests a substrate manufacturing method and a manufacturing method of a semiconductor device comprising: providing a SOI structure...
US-9,825,150 Method of forming fin field effect transistor having tapered sidewalls
A method of making a Fin field effect transistor (FinFET) includes forming a fin having a first height above a first surface of a substrate, wherein a portion...
US-9,825,149 Split gate power semiconductor field effect transistor
The present invention generally relates to a structure and manufacturing of a power field effect transistor (FET). The present invention provides a planar power...
US-9,825,148 Semiconductor device comprising an isolation trench
A method of manufacturing a semiconductor device includes forming a transistor in a semiconductor substrate having a first main surface. The transistor is...
US-9,825,147 Method of forming high voltage metal-oxide-semiconductor transistor device
A method of forming a HVMOS transistor device is provided. A substrate is provided. A first insulation structure and a trench are formed in the substrate. A...
US-9,825,146 Dummy bit line MOS capacitor and device using the same
A MOS capacitor, a method of fabricating the same, and a semiconductor device using the same are provided. The MOS capacitor is arranged in an outermost cell...
US-9,825,145 Method of manufacturing silicon carbide semiconductor device including forming an electric field control region...
When p-type impurities are implanted into a SiC substrate using a laser, controlling the concentration is difficult. A p-type impurity region is formed by a...
US-9,825,144 Semiconductor device having metal gate structure
A metal gate transistor includes a substrate, a metal gate on the substrate, and a source/drain region in the substrate adjacent to the metal gate. The metal...
US-9,825,143 Single spacer tunnel on stack nanowire
A method for forming a stacked semiconductor nanowire field effect transistor (FET) having reduced parasitic capacitance is provided. The parasitic capacitance...
US-9,825,142 Methods of fabricating semiconductor devices
Methods of fabricating semiconductor devices include forming a first impurity region in a substrate by implanting a first impurity of a first conductivity type...
US-9,825,141 Three dimensional monolithic LDMOS transistor
A three dimensional monolithic LDMOS transistor implements a drain structure vertically disposed above a level of the structure that includes a drain connection...
US-9,825,140 Metal oxide thin film transistor
A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain...
US-9,825,139 Semiconductor device and method
A semiconductor device includes a device region including a compound semiconductor material and a non-device region at least partially surrounding the device...
US-9,825,138 Field effect transistor and method of making
A method of fabricating a FET includes forming a gate on the surface of a substrate. A trench contact extends between a first region located proximate the...
US-9,825,137 Semiconductor element and method for producing the same
A semiconductor element and a method for producing the same are provided. A semiconductor element includes an active region comprising trenches, a termination...
US-9,825,136 Semiconductor component and integrated circuit
A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element...
US-9,825,135 Semiconductor devices and methods for manufacturing the same
Semiconductor devices and methods for manufacturing the same are provided. An example method may include: forming a sacrificial gate stack on a substrate;...
US-9,825,134 Layered semiconductor having base layer including GaN substrate
A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN...
US-9,825,133 Semiconductor device and related manufacturing method
A semiconductor device may include a gate electrode, an insulating layer, a first channel member, and a second channel member. The insulating layer may overlap...
US-9,825,132 Systems and methods for filtering and computation using tunneling transistors
An electrical circuit is disclosed that comprises plurality of tunneling field-effect transistors (TFETs) arranged in a diffusion network matrix having a...
US-9,825,131 Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors
A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen...
US-9,825,130 Leakage reduction structures for nanowire transistors
A nanowire device of the present description may include a highly doped underlayer formed between at least one nanowire transistor and the microelectronic...
US-9,825,129 Transistor device
A transistor device includes: a first source region and a first drain region spaced apart from each other in a first direction of a semiconductor body; at least...
US-9,825,128 Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and...
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
US-9,825,127 Super junction semiconductor device with field extension zones
A super junction semiconductor device includes an impurity layer of a first (conductivity) type formed in a semiconductor portion having first and second...
US-9,825,126 Semiconductor device
A source region of a MOSFET includes a source contact region connected to a source electrode, a source extension region adjacent to a channel region of a well...
US-9,825,125 Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the...
US-9,825,124 Power device integration on a common substrate
A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and...
US-9,825,123 Schottky barrier diode and method for manufacturing the same
A Schottky barrier diode provided herein includes: a semiconductor substrate; and an anode electrode being in contact with the semiconductor substrate. The...
US-9,825,122 Multiple work function device using GeOx/TiN cap on work function setting metal
A method is presented for tuning work functions of transistors. The method includes forming a work function stack over a semiconductor substrate, depositing a...
US-9,825,121 Semiconductor device
A semiconductor device of the embodiment includes an SiC layer of 4H--SiC structure having a surface inclined at an angle from 0 degree to 30 degrees relative...
US-9,825,120 Semiconductor device with metal extrusion formation
Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication...
US-9,825,119 Semiconductor device with metal extrusion formation
Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication...
US-9,825,118 High voltage metal-oxide-metal (HV-MOM) device, HV-MOM layout and method of making the HV-MOM device
A high voltage metal-oxide-metal (HV-MOM) layout includes a first conductive element. The first element includes a first leg extending in a first direction, a...
US-9,825,117 MIM/RRAM structure with improved capacitance and reduced leakage current
Some embodiments of the present disclosure provide an integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure. The MIM...
US-9,825,116 Formation of high-resolution patterns inside deep cavities and applications to RF SI-embedded inductors
A method for fabricating high-resolution features in a deep recess includes etching a cavity in a substrate, fabricating at least one focusing pattern on a...
US-9,825,115 Organic light emitting diode display device
An organic light emitting diode display device comprises a substrate including a pixel region, the pixel region including a first portion and a second portion,...
US-9,825,114 Organic light-emitting display apparatus and method of manufacturing the same
An organic light-emitting display apparatus, including a substrate including a display region and a fan-out region outside the display region; a plurality of...
US-9,825,113 Double-sided display substrate and manufacturing method thereof and display device
The present invention provides a double-sided display substrate and a manufacturing method thereof and a display device. The double-sided display substrate...
US-9,825,112 Array substrate, display panel and display device
The present disclosure discloses an array substrate, display panel and display device. The array substrate comprises: a base substrate, and peripheral routes...
US-9,825,111 Method of forming thin film transistor array substrate
A method of forming an organic light emitting diode (OLED) display device is discussed. The method according to an embodiment includes forming a first bank...
US-9,825,110 Organic light emitting display devices and methods of manufacturing organic light emitting display devices
An organic light emitting display device including a substrate, a semiconductor device disposed on the substrate, an insulation layer including an inclined...
US-9,825,109 Display device
A display device is provided including a first substrate provided with a pixel, the pixel being provided with a light emitting region of a light emitting device...
US-9,825,108 Curved display device
A curved display device is disclosed. In one aspect, the display device includes a substrate comprising a flat portion and at least one curved portion, a...
US-9,825,107 Organic light-emitting device
An organic light-emitting device and a flat panel display apparatus, the device including a first electrode; a second electrode facing the first electrode; and...
US-9,825,106 OLED display substrate and method for manufacturing the same, and display apparatus
The present disclosure discloses an OLED display substrate and a manufacturing method thereof, and a display apparatus. The OLED display substrate is a top...
US-9,825,105 Flexible display apparatus and method of fabricating the same
A method of forming a flexible display apparatus includes: forming a flexible substrate on a support substrate; forming a light-emitting diode on the flexible...
US-9,825,104 Low-birefringence substrate for touch sensor
In one embodiment, an apparatus includes a substrate including material having a low birefringence. One or more electrodes of a touch sensor are disposed on the...
US-9,825,103 Electronic devices having displays with openings
An electronic device may have a display. The display may have an active region in which display pixels are used to display images. The display may have one or...
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