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Patent # Description
US-9,825,102 Organic EL display device
An organic EL display device includes: a TFT substrate that includes a display area in which pixels are arranged in a matrix; and a color filter substrate that...
US-9,825,101 Top-emitting OLED substrate and fabrication method thereof, and display apparatus
An organic light-emitting diode substrate is provided. The organic light-emitting diode substrate comprises a substrate; a conductive layer formed over the...
US-9,825,100 Nonvolatile semiconductor memory device
According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of conducting layers, a semiconductor layer, a variable resistive...
US-9,825,099 Switching element, switching element array, and resistive random access memory including switching element, and...
A first electrode and an insulation material layer are sequentially formed over a substrate. A doping mask pattern is formed over the insulation material layer....
US-9,825,098 Semiconductor memory device
A semiconductor memory device according to an embodiment comprises: a first wiring line extending in a first direction; a second wiring line extending in a...
US-9,825,097 Memory device having electrically insulated reset gate
A memory that includes a memory device having a phase change layer that can be reset by using a reset gate is provided. A memory device includes memory elements...
US-9,825,096 Resistance change memory, method of manufacturing resistance change memory, and FET
According to one embodiment, a resistance change memory includes a first conductive line, a second conductive line provided above the first conductive line, and...
US-9,825,095 Hybrid phase field effect transistor
An insulating layer is deposited over a transistor structure. The transistor structure comprises a gate electrode over a device layer on a substrate. The...
US-9,825,094 FinFET PCM access transistor having gate-wrapped source and drain regions
Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source...
US-9,825,093 FinFET PCM access transistor having gate-wrapped source and drain regions
Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source...
US-9,825,092 Switching device, and resistive random access memory including the same as a selection device
A switching device includes a first electrode, a switching layer and a second electrode that are disposed over a substrate. The switching layer includes an...
US-9,825,091 Memory cell structures
A memory cell includes a first diode, a second diode, and a random access memory cell element. The first diode and the random access memory cell element are...
US-9,825,090 Light-emitting structure
A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including...
US-9,825,089 Emissive device including first and second adjacent pixels sharing the same semiconductor light-emitting stack
The emissive device includes first and second adjacent pixels (1a, 1b) sharing a common semiconductor light-emitting stack (2) and each defining an area (4a,...
US-9,825,088 Light-emitting device and manufacturing method thereof
A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure,...
US-9,825,087 Light-emitting diode
A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first...
US-9,825,086 Image pickup apparatus, image pickup system, and method for manufacturing image pickup apparatus
An image pickup apparatus includes a first pixel electrode connected to a pixel circuit, a second pixel electrode adjoining the first pixel electrode and...
US-9,825,085 Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed...
US-9,825,084 Semiconductor device
A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that...
US-9,825,083 Optical detector with photodiode array having avalanche photodiodes connected to quenching resistors
Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor...
US-9,825,082 Pixel amplification apparatus, CMOS image sensor including the same and operation method thereof
Disclosed are a pixel amplification apparatus and a CMOS image sensor thereof. The pixel amplification apparatus includes a pixel bias sampling unit that...
US-9,825,081 Semiconductor devices having a pad structure
A semiconductor device includes a substrate, a circuit layer formed on a first surface of the substrate and including a via pad and an interlayer insulating...
US-9,825,080 Photodiode insulation structure
A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of...
US-9,825,079 Photoelectric conversion device and imaging system
A photoelectric conversion device includes a photoelectric conversion unit disposed above a substrate and a reading circuit. The photoelectric conversion unit...
US-9,825,078 Camera device having an image sensor comprising a conductive layer and a reflection layer stacked together to...
An image sensor includes a sensing layer, a filter unit, and a conductive layer. The filter unit is disposed on the sensing layer. The conductive layer...
US-9,825,077 Photoelectric conversion device, method for producing photoelectric conversion device, and image pickup system
A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor...
US-9,825,076 Back-side illuminated pixel
A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer...
US-9,825,075 Image sensor and method for fabricating the same
A method for fabricating an image sensor in accordance with an embodiment of the inventive concepts may include forming first and second photodiodes within a...
US-9,825,074 Layout and operation of pixels for image sensors
Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel...
US-9,825,073 Enhanced back side illuminated near infrared image sensor
An image sensor includes a photodiode disposed in semiconductor material to accumulate image charge in response to light directed through a back side of the...
US-9,825,071 Light detection device
A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes...
US-9,825,070 LCD display with light sensor having a light blocking layer
An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The...
US-9,825,069 Array substrate manufacturing method
An array substrate manufacturing method, including: forming an active layer of a thin film transistor, in which photoresist with a partial thickness at a...
US-9,825,068 Display device and method for driving the same
A semiconductor device having a configuration hardly generating variations in the current value due to a deteriorated EL element is to be provided. A...
US-9,825,067 Display device using semiconductor light emitting device
A display device including a pixel electrode portion electrically connected to a thin film transistor; a semiconductor light emitting device configured to emit...
US-9,825,066 Thin film transistor substrate and method of manufacturing a thin film transistor substrate
A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a...
US-9,825,065 Thin film transistor array substrate and manufacturing method thereof
A substrate including gate wirings including gate line and a gate electrode disposed on the substrate, a storage line disposed on the same layer as the gate...
US-9,825,064 Color filter substrate, array substrate, and display panel and display apparatus having the same
The present application discloses a display panel comprising an array of pixel units, each pixel unit comprising a red sub-pixel, a green sub-pixel, and a blue...
US-9,825,063 Display panel and method of fabricating the same, and display device
The present invention provides a display panel, a fabricating method thereof and a display device. The display panel comprises a pixel region and a fan-out...
US-9,825,062 Array substrate with redundant gate and data line repair structures
The present disclosure provides an array substrate and a method of manufacturing the same, and a display device comprising the array substrate. The array...
US-9,825,061 Array substrate wherein a source electrode, drain electrode, and pixel electrode are arranged in a same layer...
This disclosure provides an array substrate, comprising a substrate plate, and a thin film transistor and a pixel electrode formed on the substrate plate, said...
US-9,825,060 Semiconductor device
A semiconductor device includes a first insulating layer having a first side wall, an oxide semiconductor layer located on the first side wall, a gate...
US-9,825,059 Semiconductor device and display device
A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second...
US-9,825,058 Oxide semiconductor transistor used as pixel element of display device and manufacturing method therefor
An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor...
US-9,825,057 Display device
To provide a display device in which plural kinds of circuits are formed over one substrate and plural kinds of transistors corresponding to characteristics of...
US-9,825,056 Display apparatus and method of manufacturing the same
A display apparatus includes a substrate partitioned into a central area and a peripheral area disposed adjacent to the central area. The central area includes...
US-9,825,055 FinFETs suitable for use in a high density SRAM cell
Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from...
US-9,825,054 Semiconductor memory device and method of manufacturing the same
The memory string comprises: a first semiconductor layer; a stacked body in which a plurality of conductive layers and a plurality of interlayer insulating...
US-9,825,053 Three-dimensional semiconductor memory device
A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a...
US-9,825,052 Memory device and method of forming the same
Provided is a memory device including a plurality of bit line layers and a plurality of supporting structures. Each bit line layer extends in a plane defined by...
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