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Patent # Description
US-9,824,900 Bonded structure and production method therefor
The deterioration of the resin base materials in the bonded structure is prevented. In a bonded structure containing two base materials at least one of which is...
US-9,824,899 Etching liquid for oxide containing zinc and tin, and etching method
The present invention provides an etching liquid which has a suitable etching rate for etching of an oxide containing zinc and tin and is suppressed in change...
US-9,824,898 Semiconductor device and method for manufacturing the same
To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode...
US-9,824,897 Thermal processing in silicon
A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i)...
US-9,824,896 Methods and systems for advanced ion control for etching processes
A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one...
US-9,824,895 Method of integration of ONO stack formation into thick gate oxide CMOS flow
A method of integrating a silicon-oxide-nitride-oxide-silicon (SONOS) transistor into a complementary metal-oxide-silicon (CMOS) baseline process. The method...
US-9,824,894 Method for correcting wafer bow from overlay
Described herein are methods for flattening a substrate, such as a semiconductor wafer, to reduce bowing in such substrates. Methods include treating or...
US-9,824,893 Tin oxide thin film spacers in semiconductor device manufacturing
Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a...
US-9,824,892 Semiconductor formation by lateral diffusion liquid phase epitaxy
A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the...
US-9,824,891 Method of manufacturing the thin film
The invention disclosed a method of manufacturing the thin film, which belongs to the technological field of SOI wafer manufacture. By growing a layer of...
US-9,824,890 High throughput semiconductor deposition system
A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor...
US-9,824,889 CVD silicon monolayer formation method and gate oxide ALD formation on III-V materials
Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature...
US-9,824,888 Oxide semiconductor film and formation method thereof
To provide a crystalline oxide semiconductor film. By collision of ions with a target including a crystalline In--Ga--Zn oxide, a flat-plate-like In--Ga--Zn...
US-9,824,887 Nitride semiconductor device
A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride...
US-9,824,886 Stress mitigating amorphous SiO.sub.2 interlayer
A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO...
US-9,824,885 Method of fabricating double sided Si(Ge)/Sapphire/III-nitride hybrid structure
One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front...
US-9,824,884 Method for depositing metals free ald silicon nitride films using halide-based precursors
A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD)...
US-9,824,883 Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory...
A method of manufacturing a semiconductor device by processing a substrate by supplying a processing space with a gas dispersed in a buffer space disposed at an...
US-9,824,882 Method for manufacturing a protective layer against HF etching, semiconductor device provided with the...
A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate...
US-9,824,881 Si precursors for deposition of SiN at low temperatures
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise...
US-9,824,880 Method of polishing silicon wafer and method of producing epitaxial wafer
A method of polishing a silicon wafer, including performing a mirror polishing process on the silicon wafer, the mirror polishing process including: performing...
US-9,824,879 Light source device
In a light source device, a control unit causes an energy density of a laser light in a lighting start region RS when a laser support light is maintained to be...
US-9,824,878 Ceramic metal halide lamp
A ceramic metal halide lamp includes a luminous tube; an illuminating arrangement having at least two illuminators serially connected with each other and...
US-9,824,877 Fast pushing time of flight mass spectrometer combined with restricted mass to charge ratio range delivery
Ions having a restricted range of mass to charge ratios are transmitted to the acceleration region of a Time of Flight mass analyser. A control system applies a...
US-9,824,876 Fluid chromatography injectors and injector inserts
Certain embodiments described herein are directed to injector inserts and injector assemblies. In some examples, an injector insert that includes an inlet...
US-9,824,875 Apparatus and method for generating chemical signatures using differential desorption
The present invention is directed to a method and device to generate a chemical signature for a mixture of analytes. The present invention involves using a SPME...
US-9,824,874 Ion funnel device
An ion funnel device is disclosed. A first pair of electrodes is positioned in a first direction. A second pair of electrodes is positioned in a second...
US-9,824,873 Ionization chamber with temperature-controlled gas feed
The invention relates to an ionization chamber for connection to a mass spectrometer. The ionization chamber has a temperature-control block with a gas inlet...
US-9,824,872 Systems and methods for high throughput solvent assisted ionization inlet for mass spectrometry
A multiplex system and method for achieving high throughput analysis of samples using solvent assisted ionization inlet includes an ionizing system with a...
US-9,824,871 Hybrid mass spectrometer and methods of operating a mass spectrometer
A hybrid mass spectrometer design and architecture, and methods of operating mass spectrometers are disclosed. According to one operating method, an analysis...
US-9,824,870 Portable medical diagnosis instrument
A system that integrates several technologies into a single, portable medical diagnostic apparatus for analyzing a sample body fluid (liquid and/or gas): (1) a...
US-9,824,869 Zinc oxide sputtering target
Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical...
US-9,824,868 Sputtering target and method for producing the same
A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative...
US-9,824,867 Plasma generation apparatus, deposition apparatus, and plasma generation method
Provided is a plasma generation apparatus capable of generating uniform plasma over a wide range. The plasma generation apparatus includes two oppositely...
US-9,824,866 Plasma processing method
Method for carrying out plasma processing on a wafer under Run-to-Run control by using a plasma processing apparatus having a plasma processing chamber, a...
US-9,824,865 Waferless clean in dielectric etch process
A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of...
US-9,824,864 Plasma processing method
In a plasma processing of generating plasma of different processing gases within a processing vessel in sequence, a setting of a high frequency power can be...
US-9,824,863 Plasma stabilization method and plasma apparatus
A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and...
US-9,824,862 Symmetric VHF source for a plasma reactor
The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a...
US-9,824,861 Substrate processing apparatus, substrate processing method and recording medium recording substrate processing...
A substrate processing apparatus includes at least one process module configured to process first substrates. A position detector is configured to detect first...
US-9,824,860 Charged particle beam exposure apparatus and method of manufacturing semiconductor device
The invention relates to a charged particle beam exposure apparatus configured to expose cut patterns or via patterns on a substrate having a plurality of line...
US-9,824,859 Precision material modification using miniature-column charged particle beam arrays
Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected...
US-9,824,858 Covering material stripping method and stripping device using ion irradiation
A de-coating method includes: exposing a coated body in which a coating made of an inorganic material is formed on a surface of the metal body to ion flows to...
US-9,824,857 Method for implantation of semiconductor wafers having high bulk resistivity
An ion implanter may include an electrostatic clamp to hold a substrate; a plasma flood gun generating a flux of electrons impinging upon the substrate; and a...
US-9,824,856 Deposition method and focused ion beam system
A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a...
US-9,824,855 Information processing apparatus, information processing method, and storage medium
In order to solve the problem that information indicating three or more points on a contour of a figure drawn by an electron beam writer cannot be more...
US-9,824,854 Charged particle beam device, image generation method, observation system
Provided is a charged particle beam device capable of observing the interior and the surface of a sample in a simple manner. This charged particle beam device...
US-9,824,853 Electron microscope device and imaging method using same
In order to enable high-speed imaging of a wide-field image, the imaging method using the electron microscope comprises: irradiating and scanning a wide-field...
US-9,824,852 CD-SEM technique for wafers fabrication control
A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a...
US-9,824,851 Charge drain coating for electron-optical MEMS
A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to...
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