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Patent # Description
US-9,825,204 Optoelectronic component and method of production thereof
An optoelectronic component includes a carrier having an upper side which includes a first subarea and a second subarea, wherein the first subarea and the...
US-9,825,203 Light emitting diode chip and fabrication method
A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission...
US-9,825,202 Display with surface mount emissive elements
A surface mount emissive element is provided with a top surface and a bottom surface. A first electrical contact is formed exclusively on the top surface, and a...
US-9,825,201 Light emitting device having transparent electrode and method of manufacturing light emitting device
Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a...
US-9,825,200 Micro-light-emitting diode device and method for manufacturing the same
A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor...
US-9,825,199 Laser-transferred IBC solar cells
A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized...
US-9,825,198 Method of producing a plurality of optoelectronic semiconductor chips, and optoelectronic semiconductor chip
A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits...
US-9,825,197 Method of forming a buffer layer in a solar cell, and a solar cell formed by the method
A method of fabricating a buffer layer of a photovoltaic device comprises: providing a substrate having a back contact layer disposed above the substrate and an...
US-9,825,196 Microcrystalline silicon thin film solar cell and the manufacturing method thereof
The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of...
US-9,825,195 Planar graphene semi-cyclotrons
Various emitters and emitter systems are disclosed. For instance, in various embodiments, an emitter can comprise a substrate, an insulator bonded to the...
US-9,825,194 Self aligning soldering
A substrate pad for soldering at least one self-aligning component thereon, wherein at least one edge of a body of the substrate pad is shaped to conform to a...
US-9,825,193 Photon and carrier management design for nonplanar thin-film copper indium gallium diselenide photovoltaics
Photovoltaic structures are disclosed. The structures can comprise randomly or periodically structured layers, a dielectric layer to reduce back diffusion of...
US-9,825,192 Solar cell with reduced absorber thickness and reduced back surface recombination
Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium...
US-9,825,191 Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example,...
US-9,825,190 Solar cell and method for manufacturing the same
A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a...
US-9,825,189 Dual-mode photosensitive pixel with gain stage
A photosensitive pixel with gain stage is disclosed. The photosensitive pixel with gain stage may receive an input light stimulus and output a corresponding...
US-9,825,188 Solar cell module
A solar cell module includes: two solar cells, each including: a first main face and a second main face; a first electrode on the first main face, comprising a...
US-9,825,187 Bidirectional Zener diode
A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode...
US-9,825,186 Read performance of a non-volatile memory device, in particular a non-volatile memory device with buried...
The non-volatile memory device comprises memory cells each comprising a selectable state transistor having a floating gate and a control gate. The state...
US-9,825,185 Integrated circuits and methods for fabricating integrated circuits with non-volatile memory structures
Integrated circuits and methods for fabricating integrated circuits with non-volatile memory structures are provided. An exemplary integrated circuit includes a...
US-9,825,184 Non-volatile semiconductor memory device
According to one embodiment, an inter-electrode insulating film interposed between a floating gate electrode and a control gate electrode includes a lower layer...
US-9,825,183 Semiconductor device including gate electrode extending between nanosheets
A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper...
US-9,825,182 Method of intercalating insulating layer between metal and graphene layer and method of fabricating...
A method includes growing a graphene layer on a metal layer, intercalating a first material between the metal layer and the graphene layer by heating the first...
US-9,825,181 Transistor, circuit, semiconductor device, display device, and electronic device
A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a...
US-9,825,180 Thin-film transistor and method for manufacturing same
The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method...
US-9,825,179 Oxide semiconductor, transistor, and semiconductor device
A novel oxide semiconductor is provided. An oxide semiconductor contains In, an element M (M represents Al, Ga, Y, or Sn), and Zn. The oxide semiconductor has...
US-9,825,178 Metal oxide semiconductor device
In a transistor including an oxide semiconductor film, a metal oxide film which has a function of preventing electrification and covers a source electrode and a...
US-9,825,176 Method of manufacturing a dual-gate thin film transistor
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on...
US-9,825,175 Thin film transistor including diffusion blocking layer and fabrication method thereof, array substrate and...
A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor includes: an active...
US-9,825,174 FinFET with dielectric isolated channel
Embodiments of the present invention provide a fin type field effect transistor (FinFET) and methods of fabrication. A punchthrough stopper region is formed on...
US-9,825,173 FinFET device
A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric...
US-9,825,172 Field effect transistor structure and method of forming same
The disclosure relates generally to a metal-oxide-semiconductor field effect transistor (MOSFET) structures and methods of forming the same. The MOSFET...
US-9,825,171 Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this...
US-9,825,170 Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a...
A semiconductor device formed in a semiconductor substrate having a first main surface comprises a transistor array and a termination region. The transistor...
US-9,825,169 Partial, self-biased isolation in semiconductor devices
A device includes a semiconductor substrate, a buried doped isolation layer disposed in the semiconductor substrate to isolate the device, a drain region...
US-9,825,168 Semiconductor device capable of high-voltage operation
A semiconductor device includes a semiconductor substrate and a first well region formed in the semiconductor substrate. An insulator is formed in and over a...
US-9,825,167 Method of manufacturing a P-channel power MOSFET
In characteristic test measurements of double-gate-in-trench p-channel power MOSFETs each having a p.sup.+ polysilicon gate electrode and a p.sup.+ field plate...
US-9,825,166 Silicon carbide semiconductor device and method for producing same
Disclosed herein is a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. A trenched MISFET with a trench...
US-9,825,165 Charge-compensation device
A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a...
US-9,825,164 Silicon carbide semiconductor device and manufacturing method for same
A silicon carbide semiconductor device includes a drift layer of a first conductivity type, a source region of the first conductivity type, an active trench...
US-9,825,163 Power MOSFET, an IGBT, and a power diode
Super-junction MOSFETs by trench fill system requires void-free filling epitaxial growth. This may require alignment of plane orientations of trenches in a...
US-9,825,162 Vertical power transistor device, semiconductor die and method of manufacturing a vertical power transistor device
A vertical power transistor device comprises: a substrate formed from a III-V semiconductor material and a multi-layer stack at least partially accommodated in...
US-9,825,161 Logical operation element
Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation element 30...
US-9,825,160 Semiconductor device
A semiconductor device includes: a semiconductor substrate; a main electrode; a peripheral electrode; an insulating protective film; a surface metallic layer;...
US-9,825,159 Semiconductor device
Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of gate trench sections formed in the semiconductor substrate; and a...
US-9,825,158 Insulated gate bipolar transistor
An IGBT is provided having a first gate unit having first trench gates with first conductive layers and planar gates with second conductive layers. A second...
US-9,825,157 Heterojunction bipolar transistor with stress component
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor with a stress component and methods of...
US-9,825,156 Compound semiconductor device
A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit...
US-9,825,155 Magnetoresistive element and spin-transport element
The magnetoresistive element includes a semiconductor channel layer, a pinned layer disposed on the semiconductor channel layer via a first tunnel layer, a free...
US-9,825,154 Room temperature tunneling switches and methods of making and using the same
The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage...
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