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Patent # Description
US-9,831,325 Semiconductor device
A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor...
US-9,831,324 Self-aligned inner-spacer replacement process using implantation
A method for manufacturing a semiconductor device includes forming a stacked configuration of first and second semiconductor layers on a semiconductor...
US-9,831,323 Structure and method to achieve compressively strained Si NS
A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each...
US-9,831,322 Channel epitaxial regrowth flow (CRF)
A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including...
US-9,831,321 Semiconductor device with strained layer
A semiconductor device and method of fabricating thereof is described that includes a substrate including at least one fin, at least one gate stack formed on a...
US-9,831,320 High voltage lateral DMOS transistor with optimized source-side blocking capability
An integrated circuit and method having an extended drain MOS transistor with a buried drift region, a drain diffused link, a channel diffused link, and an...
US-9,831,319 Transistor with MIS connections and fabricating process
A field-effect transistor, including a source, drain and channel formed in a semiconductor layer a gate stack placed above the channel, including a metal...
US-9,831,318 Semiconductor device and a manufacturing method thereof
The reliability of a semiconductor device having a nonvolatile memory is improved. The memory cell of the nonvolatile memory is of a split gate type, and has...
US-9,831,317 Buried contact structures for a vertical field-effect transistor
Structures including a vertical field-effect transistor and fabrication methods for a structure including a vertical field-effect transistor. A vertical...
US-9,831,316 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes an element portion and a gate pad portion on the same wide gap semiconductor substrate. The element portion includes a first...
US-9,831,315 Semiconductor devices with field plates
A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of...
US-9,831,314 Surface profile for semiconductor region
One or more techniques or systems for controlling a profile of a surface of a semiconductor region are provided herein. In some embodiments, an etching to...
US-9,831,313 Method to thin down indium phosphide layer
The disclosed subject matter provides a Fin-FET with a thinned-down InP layer and thinning-down method thereof. In a Fin-FET, the fin structure is made of...
US-9,831,312 Group III-V device structure having a selectively reduced impurity concentration
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body...
US-9,831,311 Semiconductor device and method of manufacturing the same
A semiconductor device includes: a semiconductor layer; a first electrode that is in ohmic contact with part of the semiconductor layer; an insulating film that...
US-9,831,310 Compound semiconductor device, method for producing the same, power-supply unit, and high-frequency amplifier
A compound semiconductor device includes: a compound semiconductor multilayer structure including a first buffer layer composed of AlN; and a second buffer...
US-9,831,309 Semiconductor device and manufacturing method thereof
A miniaturized transistor having highly stable electrical characteristics is provided. Furthermore, high performance and high reliability of a semiconductor...
US-9,831,308 Semiconductor device having vertical semiconductor pillars
A semiconductor device includes a plurality of substantially vertical semiconductor pillars on a substrate, and a hard mask layer overlying the plurality of...
US-9,831,307 Gap fill self planarization on post EPI
The present disclosure relates to an integrated chip having gate electrodes separated from an epitaxial source/drain region by gaps filled with a flowable...
US-9,831,306 Self-aligned gate edge and local interconnect and method to fabricate same
Self-aligned gate edge and local interconnect structures and methods of fabricating self-aligned gate edge and local interconnect structures are described. In...
US-9,831,305 Semiconductor device and method for manufacturing the same
A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer; a first conductive type first well region disposed in the...
US-9,831,304 Integrated circuits with deep trench isolations and methods for producing the same
Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, a method of producing an integrated circuit...
US-9,831,303 Capacitor structure and process for fabricating the same
A process for fabricating a capacitor is described. A template layer including a stack of at least one first layer and at least one second layer is formed over...
US-9,831,302 Making electrical components in handle wafers of integrated circuit packages
A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first...
US-9,831,301 Metal resistor structures with nitrogen content
Resistor elements and methods of forming the resistor elements generally include increasing resistivity by diffusing nitrogen ions from an underlying dielectric...
US-9,831,300 Display module, display apparatus for vehicle, and method of manufacturing the same
A display module includes abase substrate including an upper surface and a lower surface opposite the upper surface; a pixel layer facing the base substrate...
US-9,831,299 OLED display panel and manufacturing method thereof
An OLED display panel is provided which can control the problem of shedding even in high definition panels. Metal wiring 5 which conducts with an earth line of...
US-9,831,298 Organic light-emitting device
The present specification relates to an organic light emitting device.
US-9,831,297 AMOLED array substrate, method for manufacturing the same and display device
The present invention relates to an AMOLED array substrate, a manufacturing method thereof and a display device. The AMOLED array substrate includes at least...
US-9,831,295 Organic luminescence display and method of manufacturing the same
Provided are organic luminescence display and method for manufacturing the same. According to an aspect of the present invention, there is provided an organic...
US-9,831,293 Organic light emitting display device, method of fabricating the same, and color filter plate
A color filter plate for a display device according to an embodiment includes a substrate including a first pixel region; a first color filter pattern over the...
US-9,831,292 Organic light-emitting display apparatus and method of manufacturing the same
An organic light-emitting display apparatus includes: an organic light-emitting device including a plurality of sub-pixels respectively emitting lights of...
US-9,831,291 Organic light emitting display device and method of manufacturing the same
An organic light emitting display device includes first and second electrodes facing each other on a substrate, a charge generation layer formed between first...
US-9,831,290 Semiconductor memory device having local bit line with insulation layer formed therein
According to one embodiment, a semiconductor memory device includes first conductive layers extending in a first direction and stacked in a second direction...
US-9,831,289 Disturb-resistant non-volatile memory device using via-fill and etchback technique
A method of forming a disturb-resistant non volatile memory device includes providing a substrate and forming a first dielectric thereon, forming a first strip...
US-9,831,288 Integrated circuit cointegrating a FET transistor and a RRAM memory point
The invention relates to an integrated circuit (1), comprising: a field-effect transistor (2), comprising: first and second conduction electrodes (201, 202);...
US-9,831,287 Memory devices and memory device forming methods
Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive...
US-9,831,286 Electronic device and method for fabricating the same
This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document...
US-9,831,285 Photoelectric conversion apparatus and method of manufacturing the same
A method of manufacturing a photoelectric conversion apparatus includes forming a first semiconductor region of a first conductivity type in a trench provided...
US-9,831,284 Method of manufacturing an imaging device
A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a...
US-9,831,283 Systems and methods for imaging using single photon avalanche diodes
Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring...
US-9,831,282 Electronic device package and fabricating method thereof
Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof....
US-9,831,281 Electrical interconnects for photodiode arrays and readout interface circuits in focal plane array assemblies
A focal plane array assembly includes a readout integrated circuit with a contact array surface, a photodiode array with a contact array surface facing the...
US-9,831,279 Image sensors including non-uniformly doped transfer gate in recess
An image sensor includes a photoelectric conversion portion providing a recessed region, a transfer gate provided in the recessed region, and a floating...
US-9,831,278 Solid-state image sensor and camera with pixel openings
A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a...
US-9,831,277 Array substrate having an electro-static discharge unit, electro-static discharge method thereof and display device
An array substrate, an electro-static discharge method thereof and a display device are disclosed. The array substrate includes: a plurality of data lines, a...
US-9,831,276 Display panel
A display panel is disclosed, which comprises a first substrate including: a base substrate; a semiconductor layer; a first insulating layer; a first scan line...
US-9,831,275 Method for manufacturing a semiconductor device at low temperature
A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first...
US-9,831,274 Metal oxide film and method for forming metal oxide film
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10...
US-9,831,273 Flexible single-crystalline semiconductor device and fabrication methods thereof
Systems and methods herein relate to the fabrication of a single-crystal flexible semiconductor template that may be attached to a semiconductor device. The...
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