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Patent # Description
US-9,852,938 Passivated germanium-on-insulator lateral bipolar transistors
After forming an epitaxial germanium layer over a germanium-on-insulator substrate including an insulator layer and a doped germanium layer overlying the...
US-9,852,937 Object table, lithographic apparatus and device manufacturing method
An object table has a lifting mechanism to displace an object from a support surface. The lifting mechanism includes one or more elongated rods extending in a...
US-9,852,936 Load port and method for loading and unloading cassette
A load port for a processing tool includes a carrier, a carrier actuator, an input table, an input table actuator, and a controller. The carrier has a plurality...
US-9,852,935 Substrate processing apparatus
A substrate processing apparatus including a frame, a first SCARA arm connected to the frame, including an end effector, configured to extend and retract along...
US-9,852,934 Semiconductor wafer transportation
A wafer transportation pod includes a body, a main compartment enclosed by the body, the main compartment to provide a controlled environment, a holding device...
US-9,852,933 Substrate processing apparatus, substrate processing method, and recording medium
A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit...
US-9,852,932 Method for processing semiconductor wafer
A semiconductor processing station is provided. The semiconductor processing station includes a first platform, a second platform and a vacuum tunnel, wherein...
US-9,852,931 Substrate processing apparatus
A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of...
US-9,852,930 Microelectronics package with inductive element and magnetically enhanced mold compound component
The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for...
US-9,852,929 Lead frame and manufacturing method of lead frame
A lead frame includes a lead frame body processed in a predetermined shape, and including a notched part provided at an end of the lead frame body, the notched...
US-9,852,928 Semiconductor packages and modules with integrated ferrite material
A semiconductor package includes a lead frame having a die paddle and a plurality of leads including a gate lead spaced apart from the die paddle. The...
US-9,852,927 Near-unity photoluminescence quantum yield in MoS.sub.2
Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary...
US-9,852,926 Manufacturing method for semiconductor device
A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device...
US-9,852,925 Method of manufacturing semiconductor device
A technique of reducing the manufacturing cost of a semiconductor device is provided, There is provided a method of manufacturing a semiconductor device...
US-9,852,924 Line edge roughness improvement with sidewall sputtering
A method for reducing sidewall roughness in an etch layer below a first mask with sidewall roughness in a processing chamber is provided. Sidewalls of the first...
US-9,852,923 Mask etch for patterning
A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is...
US-9,852,922 Plasma processing method
A plasma etching method includes: mounting a target substrate on a first electrode which is provided to be parallel with a second electrode with a preset gap...
US-9,852,921 Substrate treating apparatus and method of treating substrate
A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical...
US-9,852,920 Etch system and method for single substrate processing
Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment...
US-9,852,919 Methods and systems for point of use removal of sacrificial material
A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric...
US-9,852,918 Embedding additive particles in encapsulant of electronic device
An electronic device comprising a carrier having a mounting surface, at least one electronic chip mounted on the mounting surface, an encapsulant at least...
US-9,852,917 Methods of fabricating semiconductor fins by double sidewall image transfer patterning through localized...
A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the...
US-9,852,916 Single platform, multiple cycle spacer deposition and etch
A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion...
US-9,852,915 Etching apparatus
A system and method of etching a semiconductor device are provided. Etching solution is sampled and analyzed by a monitoring unit to determine a concentration...
US-9,852,914 Sacrificial-film removal method and substrate processing device
The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and...
US-9,852,913 Wetting pretreatment for enhanced damascene metal filling
Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface...
US-9,852,912 Method of manufacturing semiconductor device for reducing grain size of polysilicon
A method of manufacturing a semiconductor device includes providing a silicon substrate with multiple layers formed on a front side and a backside, wherein at...
US-9,852,911 Field effect transistor
A semiconductor device includes a semiconductor layer, a first electrode located over the semiconductor layer and connected to the semiconductor layer, a second...
US-9,852,910 Vertical power transistor with dual buffer regions
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
US-9,852,908 Methods for integrated circuit design and fabrication
The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer...
US-9,852,907 Mask structure forming method and film forming apparatus
There is provided a method of forming an etching-purpose mask structure on an insulating film containing silicon and oxygen, which includes: forming an...
US-9,852,906 Method for manufacturing semiconductor device
It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another...
US-9,852,905 Systems and methods for uniform gas flow in a deposition chamber
The present disclosure is directed an apparatus for regulating gas flow in a deposition chamber during a deposition process. The apparatus includes an interior...
US-9,852,904 Method for manufacturing semiconductor device
In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with...
US-9,852,903 System and method in indium-gallium-arsenide channel height control for sub 7nm FinFET
A method for forming a group III-V semiconductor channel region in a transistor is provided herein. The method includes exposing a substrate including an oxide...
US-9,852,902 Material deposition for high aspect ratio structures
Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation...
US-9,852,901 Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for...
US-9,852,900 Oxidizing filler material lines to increase width of hard mask lines
A starting semiconductor structure includes a layer of filler material, a hard mask layer over the layer of filler material, and filler material lines over the...
US-9,852,899 Wafer back-side polishing system and method for integrated circuit device manufacturing processes
Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher,...
US-9,852,898 Target for ultraviolet light generation, electron beam-excited ultraviolet light source, and production method...
A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the...
US-9,852,897 Hybrid ion source, mass spectrometer, and ion mobility device
Provided is an ion source achieving high sensitivity and high robustness while executing a plurality of types of ionization schemes. To this end, a hybrid ion...
US-9,852,896 Method and apparatus for contained-electrospray for use in mass spectrometry and droplet reactions
Provided herein are apparatuses that can comprise an electrospray emitter comprising a sample capillary extending from a sample inlet to a sample outlet and an...
US-9,852,895 Mass spectrometer arranged to perform MS/MS/MS
A mass spectrometer is disclosed comprising an on trap and a fragmentation device. Ions are fragmented in the ion trap to form first generation fragment ions....
US-9,852,894 Compact mass spectrometer
A miniature mass spectrometer is disclosed comprising an atmospheric pressure ionization source and a first vacuum chamber having an atmospheric pressure...
US-9,852,893 Dipole ring magnet assisted microwave radial line slot antenna plasma processing method and apparatus
A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a...
US-9,852,892 Microwave supply apparatus, plasma processing apparatus, and plasma processing method
A microwave supply apparatus includes a waveguide, a circulator, and a matcher, a first port of the circulator receives a microwave from an input end. First and...
US-9,852,891 Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures
A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity;...
US-9,852,890 Frequency tuning for pulsed radio frequency plasma processing
This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to...
US-9,852,889 Systems and methods for controlling directionality of ions in an edge region by using an electrode within a...
Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio...
US-9,852,888 Circulating cooling/heating device
A circulating cooling/heating device that is configured to cool and heat a circulating fluid supplied to a chamber in plasma-etching equipment includes: a...
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