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Patent # Description
US-9,871,096 Serial capacitor device with middle electrode contact
A capacitor includes a bottom electrode and a top electrode positioned above the bottom electrode. The top electrode and the bottom electrode are conductively...
US-9,871,095 Stacked capacitor with enhanced capacitance and method of manufacturing the same
A semiconductor device and method of manufacturing the same is provided. The semiconductor device includes a semiconductor substrate and a stacked capacitor....
US-9,871,094 Organic light emitting diode display and method for manufacturing organic light emitting diode display
An organic light emitting device includes: a substrate; a first thin film transistor including a first active pattern positioned on the substrate and a first...
US-9,871,093 Semiconductor devices
Provided is a semiconductor device. The semiconductor device includes a capacitor structure including a plurality of lower electrodes, a dielectric layer that...
US-9,871,092 Display device with reduced frame size
A display device includes contact holes opened in an insulating film outside of a display area in which pixels are arranged, and having a conductive film...
US-9,871,091 Electro-optical device and electronic apparatus
Subpixels of R, G, and B corresponding to a scanning line extended in a row direction and a data transfer line extended in a column direction are provided. A...
US-9,871,090 Organic light emitting display
An organic light emitting display includes a driving transistor, an organic light emitting diode, an interlayer insulating layer, and a connection electrode....
US-9,871,089 Display device
A display device is disclosed. In one aspect, the display device includes a first power wire is disposed in a non-display area of a substrate and includes a...
US-9,871,088 Light-emitting device and manufacturing method thereof
When a hollow structure in which a light-emitting element is provided between a pair of substrates is used in order to prevent oxygen or moisture from reaching...
US-9,871,087 Organic light-emitting diode display having high aperture ratio and method for manufacturing the same
An organic light-emitting diode display can include a substrate in which an emission area and a non-emission area are defined; a first transparent conductive...
US-9,871,086 Display device and method for manufacturing display device
Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an...
US-9,871,085 Organic light-emitting diode display panel
Disclosed is an organic light-emitting diode display panel, which may effectively reduce or prevent spreading of the peeling of an organic light-emitting layer...
US-9,871,084 Organic light-emitting display device
An organic light-emitting display device includes a first substrate, a second substrate, a sealing adhesive layer, an organic light-emitting device and a touch...
US-9,871,083 Display device
A sealing member containing conductive particles and disposed in a seal region is formed between a display panel and a touch panel. A laminated structure formed...
US-9,871,082 Organic light emitting display integrated with touch screen panel
An organic light emitting display integrated with a touch screen panel includes a first substrate, the first substrate having pixels and having signal lines...
US-9,871,081 Flexible display device
A flexible display device is disclosed. In one aspect, the device includes a display substrate including a display area and a non-display area surrounding the...
US-9,871,080 Organic light emitting diode display
An organic light emitting diode display according to the present invention includes a substrate assembly including a substrate with a driving transistor...
US-9,871,079 Image sensor and electronic device including the same
An image sensor includes a semiconductor substrate integrated with at least a photo-sensing device, a plurality of first electrodes disposed on the...
US-9,871,078 Memory arrays and methods of forming memory arrays
Some embodiments include a memory array having a first memory cell adjacent to a second memory cell along a lateral direction. The second memory cell is...
US-9,871,077 Resistive memory device with semiconductor ridges
A memory device includes one or more first semiconductor ridges formed on a first semiconductor wafer. The first semiconductor ridges are configured to be first...
US-9,871,076 Domain wall magnetic memory
Devices and methods of forming a device are disclosed. The method includes providing a substrate with a cell region. Selector units and storage units are formed...
US-9,871,075 Optoelectronic semiconductor component
An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation,...
US-9,871,074 Method of forming an infrared filter associated with an image sensor
An image sensor having a portion including interconnection levels formed on a semiconductor substrate covered with a first layer of a dielectric material,...
US-9,871,073 Scintillator sealing for solid state X-ray detector
An x-ray detector may comprise: a moisture-impermeable substrate including a non-monolithic conductive portion integrated with a monolithic dielectric portion;...
US-9,871,072 Photoelectric conversion device, image pickup system, and method for manufacturing photoelectric conversion device
A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a...
US-9,871,071 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light...
US-9,871,070 Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors
A backside illuminated (BSI) image sensor for biased backside deep trench isolation (BDTI) and/or biased backside shielding is provided. A photodetector is...
US-9,871,069 Solid-state imaging apparatus
A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member...
US-9,871,068 Methods and apparatus for an image sensor with a multi-branch transistor
Various embodiments of the present technology may comprise a method and device for a multi-source/drain transistor for use in an image sensor. The device may...
US-9,871,067 Infrared image sensor component
An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound...
US-9,871,066 Enhanced pixel for multiband sensing including a signal path to receive a flow of signals flowing through a...
An imaging pixel including a control device to control flow of a charge signal from a photodetector. The control device has a variable impedance that varies in...
US-9,871,065 RGBZ pixel unit cell with first and second Z transfer gates
An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The...
US-9,871,064 Method for forming shallow trenches of the dual active regions
The invention disclosed a method for forming shallow trenches of the dual active regions. Firstly, forming an etch stop layer on a semiconductor substrate;...
US-9,871,063 Display driver semiconductor device and manufacturing method thereof
A display driver semiconductor device includes a high voltage well region being formed on a substrate, a first semiconductor device, a second semiconductor...
US-9,871,062 Thin film transistor array substrate, method of manufacturing the same, and display device having the same
A thin film transistor array substrate includes gate and data lines, a thin film transistor, a pixel electrode, a polarizing plate, and a contact line. The gate...
US-9,871,061 Display substrate and method of fabricating the same
A display substrate and its fabricating method have been disclosed. In a horizontal-field-mode liquid crystal display device, while maintaining five mask...
US-9,871,060 Semiconductor light emitting device
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor...
US-9,871,059 Semiconductor device and method for manufacturing the same
A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching...
US-9,871,058 Metal oxide film and method for forming metal oxide film
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10...
US-9,871,057 Field-effect transistors with a non-relaxed strained channel
Device structures for a field-effect transistor and methods of forming such device structures using a device layer of a silicon-on-insulator substrate. A...
US-9,871,056 Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for...
A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second...
US-9,871,055 Vertical-type memory device
A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on...
US-9,871,054 Semiconductor device and method for manufacturing same
According to one embodiment, the stacked body includes a plurality of electrode layers stacked with an insulator interposed. The electrode layers have a...
US-9,871,053 Semiconductor device
Provided herein is a semiconductor device. The semiconductor device includes: a lower conductive pattern; a lower memory string conductive pattern disposed over...
US-9,871,052 Three-dimensional memory device having ring-shaped etch-stop patterns interposed between lower and upper layer...
A semiconductor device includes a first stack including a plurality of alternating layers of first interlayer insulating layers and first conductive patterns; a...
US-9,871,051 Stacked type semiconductor memory device and method for manufacturing the same
A semiconductor memory device according to an embodiment, includes a stacked body, first and second semiconductor pillars and a contact. The stacked body...
US-9,871,050 Flash memory device
A method of manufacturing a flash memory device is provided including providing a silicon-on-insulator (SOI) substrate, in particular, a fully depleted...
US-9,871,049 Static random access memory device and forming method thereof
A static random access memory device includes two body contacts and two resistive-switching devices. The body contacts are disposed in a wafer and are exposed...
US-9,871,048 Memory device
A memory device includes a pickup area extending along a first direction. The pickup area includes at least one N-pickup structure, distributing along an...
US-9,871,047 Memory structure and a method for forming the same
A semiconductor structure includes a SRAM cell having transistors defined by fins and metal gate stack structures. A transistor and a corresponding pick up cell...
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