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Patent # Description
US-9,870,943 Contact process and contact structure for semiconductor device
A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A contact...
US-9,870,941 Stair step formation using at least two masks
Apparatuses and methods for stair step formation using at least two masks, such as in a memory device, are provided. One example method can include forming a...
US-9,870,940 Methods of forming nanosheets on lattice mismatched substrates
Methods of forming nanosheets for a semiconductor device are provided including providing a silicon on insulator (SOI) handle wafer, the SOT handle wafer...
US-9,870,939 RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection
Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device...
US-9,870,938 Semiconductor element producing method by flattening protective tape
A semiconductor element producing method is disclosed. In the method, a surface protective tape including a base layer and an adhesive layer (including an...
US-9,870,937 High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less...
US-9,870,936 Wafer carrier purge apparatuses, automated mechanical handling systems including the same, and methods of...
A wafer carrier purge apparatus, an automated mechanical handling system, and a method of handling a wafer carrier during integrated circuit fabrication are...
US-9,870,935 Monitoring system for deposition and method of operation thereof
A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a...
US-9,870,934 Electrostatic chuck and temperature-control method for the same
An electrostatic chuck includes a chuck base and cooling pipes. The chuck base has at least four cooling zones, in which the cooling zones viewed at a direction...
US-9,870,933 Process and apparatus for treating surfaces of wafer-shaped articles
An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing...
US-9,870,932 Pressure purge etch method for etching complex 3-D structures
A method for etching a substrate and removing byproducts includes a) setting process parameters of a processing chamber for a selective dry etch process; b)...
US-9,870,931 Package carrier and manufacturing method thereof
A package carrier includes a substrate, at least one heat conducting element, an insulating material, a first patterned circuit layer and a second patterned...
US-9,870,930 Method for producing substrate for mounting semiconductor element
Methods for producing a substrate for semiconductor element mounts are provided. A base substrate can be prepared having on a first metal layer, a second metal...
US-9,870,929 Package structure, fan-out package structure and method of the same
A package structure includes a spiral coil, a redistribution layer (RDL) and a molding material. The molding material fills gaps of the spiral coil. The spiral...
US-9,870,928 System and method for updating an arm scan profile through a graphical user interface
A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device,...
US-9,870,927 Free-edge semiconductor chip bending
Techniques for fabricating a semiconductor chip having a curved surface may include placing a substantially flat semiconductor chip in a recess surface of a...
US-9,870,926 Semiconductor device and manufacturing method thereof
A method of manufacturing a source structure for a p-type metal-oxide-semiconductor (PMOS) field effect transistor (FET) is provided. In the method, a first...
US-9,870,925 Quantum doping method and use in fabrication of nanoscale electronic devices
A novel doping technology for semiconductor wafers has been developed, referred to as a "quantum doping" process that permits the deposition of only a fixed,...
US-9,870,924 Diffusion agent composition, method of forming impurity diffusion layer, and solar cell
A diffusion agent composition used in forming an impurity diffusion agent layer on a semiconductor substrate, and containing an impurity diffusion component, a...
US-9,870,923 Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device that includes a p-type region formed selectively along one principle surfaces of an n-type drift layer and having a resistance that is...
US-9,870,922 Substrate bonding apparatus and substrate bonding method
A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first...
US-9,870,921 Cleaning method
Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly,...
US-9,870,920 Growing III-V compound semiconductors from trenches filled with intermediate layers
A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of...
US-9,870,919 Process chamber having separate process gas and purge gas regions
Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process...
US-9,870,918 InGaAs film grown on Si substrate and method for preparing the same
The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In.sub.0.4Ga.sub.0.6As buffer layer, a...
US-9,870,917 Variable temperature hardware and methods for reduction of wafer backside deposition
A process tuning kit for use in a chemical deposition apparatus wherein the process tuning kit includes a carrier ring, horseshoes and shims. The horseshoes...
US-9,870,916 LDMOS transistor
A LDMOS transistor includes a semiconductor substrate with a first doping type; a plurality of first trenches formed in the semiconductor substrate; a...
US-9,870,915 Chemical modification of hardmask films for enhanced etching and selective removal
Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed...
US-9,870,914 Substrate processing apparatus and substrate processing method
In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the...
US-9,870,913 Flash discharge tube and light-emitting device equipped with the flash discharge tube
A flash discharge tube includes tungsten pins configuring a pair of discharge electrodes, and an envelope. The envelope includes a central region, serving as an...
US-9,870,912 Mass spectrometers having real time ion isolation signal generators
Apparatuses, systems, and methods for performing mass analysis are disclosed. One such apparatus may include an ion trap device for use in a mass analysis...
US-9,870,911 Method and apparatus for processing ions
Methods and apparatus for operating a mass spectrometer are described. In various aspects, ions of a mass range of interest may be mass-selectively ejected from...
US-9,870,910 High speed polarity switch time-of-flight spectrometer
A mass spectrometer and method is provided for a time-of-flight analyzer (TOF) having an accelerator stage with a plurality of electrodes to receive and...
US-9,870,909 Compositions and methods for mass spectometry
The invention provides ionizing matrix compounds. These compounds are useful for mass spectrometry and ion mobility spectrometry as ionizing matrices...
US-9,870,908 Ambient ionisation with an impactor spray source
An ion source is disclosed comprising a nebulizer arranged and adapted to emit a liquid spray, a first target arranged downstream of the nebulizer, wherein the...
US-9,870,907 Probe for extraction of molecules of interest from a sample
The present disclosure describes a device for generating ionized molecules for analysis in a mass spectrometer. The device includes: a mesh substrate coated...
US-9,870,906 Multipole PCB with small robotically installed rod segments
A radio frequency multipole assembly includes first and second printed circuit boards. Each printed circuit board includes a substrate, at least two rows of...
US-9,870,905 Method of generating electric field for manipulating charged particles
A method of manufacturing a device for manipulating charged particles using an axial electric field as they travel along a longitudinal axis of the device is...
US-9,870,904 Ion source for mass spectrometry
Systems and methods for delivering a sample to a mass spectrometer are provided. In one aspect, the systems and methods can provide efficient cooling of an ion...
US-9,870,903 Adaptive and targeted control of ion populations to improve the effective dynamic range of mass analyser
A method of mass spectrometry is disclosed wherein one or more relatively abundant or intense species of ions in a first population of ions are selectively...
US-9,870,902 Li-containing oxide target assembly
Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a...
US-9,870,901 Method of producing processing condition of plasma processing apparatus, and plasma processing apparatus
Disclosed is a method of producing a processing condition of a plasma processing apparatus. The method includes producing a plurality of processing conditions...
US-9,870,900 Methods and systems for managing semiconductor manufacturing equipment
Provided are methods and systems for managing semiconductor manufacturing equipment. A method may include preventive maintenance involving steps of ...
US-9,870,899 Cobalt etch back
Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing...
US-9,870,898 Plasma processing method and plasma processing apparatus
A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric...
US-9,870,897 Symmetrical plural-coil plasma source with side RF feeds and RF distribution plates
A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around...
US-9,870,896 System and method for controlling ion implanter
A system, a method, and a non-transitory computer readable storage medium for controlling an ion implanter are disclosed herein. The system includes a sample...
US-9,870,895 Methods for perforating two-dimensional materials using a broad ion field
Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density...
US-9,870,894 Embedding resin composition for electron microscopey and method for observing sample with electron microscope...
The present invention provides an embedding resin composition for electron microscopy having satisfactory performance as an embedding medium, including...
US-9,870,893 Multi-piece electrode aperture
An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively...
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