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Patent # Description
US-9,876,014 Germanium-based quantum well devices
A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close...
US-9,876,012 Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method
A voltage converter includes an output circuit having a high-side device and a low-side device which can be formed on a single die (a "PowerDie"). The high-side...
US-9,876,007 MIMcap creation and utilization methodology
A metal-insulator-metal (MIM) capacitor design methodology and system substantially maximizes the benefits of including MIM capacitors in an integrated circuit...
US-9,875,994 Multi-chip package, system and test method thereof
A multi-chip package may include a plurality of semiconductor chips integrated in a single package and sharing one or more command pins. Each of the...
US-9,875,988 Semiconductor device and method of forming DCALGA package using semiconductor die with micro pillars
A semiconductor device has a first semiconductor die disposed over a substrate. A plurality of composite interconnect structures are formed over the...
US-9,875,980 Copper pillar sidewall protection
Methods for copper pillar protection may include forming a metal post over a contact on a semiconductor die, where the metal post comprises a sidewall. A metal...
US-9,875,974 Processing techniques for silicon-based transient devices
Provided are methods of making a transient electronic device by fabricating one or more inorganic semiconductor components, one or more metallic conductor...
US-9,875,971 Magnetic shielding of MRAM package
Magnetic random access memory (MRAM) packages with magnetic shield protections and methods of forming thereof are presented. Package contact traces are formed...
US-9,875,968 Interlevel conductor pre-fill utilizing selective barrier deposition
A substrate is provided having a dual damascene structure formed within a dielectric material over the substrate. The dual damascene structure includes a trench...
US-9,875,967 Interconnect structure with air-gaps
The present disclosure relates to an interconnect structure. In some embodiments, the interconnect structure has a first conductive body arranged within a first...
US-9,875,963 Semiconductor device
According to one embodiment, an integrated circuit is formed on a semiconductor chip, a regulator supplies power to the integrated circuit via the power-supply...
US-9,875,959 Forming a stacked capacitor
Stacked capacitor structures using TSVs are provided. In one aspect, a stacked capacitor structure includes: a first substrate having at least one first...
US-9,875,952 Power conversion device
A power conversion device includes a heat releasing heatsink, a printed circuit board provided on the heatsink and having a through hole and wires, a metal case...
US-9,875,951 Heat sink with orientable fins
A heat sink comprises a first thermally conductive base having a first face to thermally engage a heat-generating electronic component and a second thermally...
US-9,875,949 Electronic package having circuit structure with plurality of metal layers, and fabrication method thereof
An electronic package is provided, which includes: a circuit structure having opposite first and second sides; at least an electronic element disposed on the...
US-9,875,945 Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistor
An electrical device that in some embodiments includes a substrate including a lateral device region and a vertical device region. A lateral diffusion metal...
US-9,875,937 Method for forming semiconductor structure with nanowire structures
The present invention provides a method for forming a semiconductor structure. Firstly, a substrate is provided, the substrate comprises an insulating layer and...
US-9,875,926 Substrates with buried isolation layers and methods of formation thereof
A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the...
US-9,875,925 Method of fabricating semiconductor device
A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon...
US-9,875,924 Spray coater and ring-shaped structure thereof
A spray coater is used to spray a photoresist on a front surface of a wafer. The spray coater includes a vacuum chuck, a flow guiding ring, and a positioning...
US-9,875,917 Semiconductor bonding apparatus and related techniques
A semiconductor structure bonding apparatus is disclosed. The apparatus may include a leveling adjustment system configured to provide leveling adjustment of...
US-9,875,914 Process for manufacturing a plurality of structures
A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the...
US-9,875,913 Method for singulating packaged integrated circuits and resulting structures
A method of packaging an integrated circuit includes forming a first integrated circuit and a second integrated circuit on a wafer, the first and second...
US-9,875,906 Mechanisms for forming patterns using multiple lithography processes
A method for forming patterns in a semiconductor device includes providing a substrate and a patterning-target layer formed over the substrate; forming a first...
US-9,875,891 Selective inhibition in atomic layer deposition of silicon-containing films
Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves...
US-9,875,886 Double-ended ceramic metal halide lamp
A double-ended ceramic metal halide lamp includes a luminous tube; at least two illuminators serially connected with each other deposed inside the luminous...
US-9,875,882 Microwave plasma processing apparatus, slot antenna, and semiconductor device
Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which...
US-9,875,876 Charged particle beam writing apparatus and charged particle beam writing method
A charged particle beam writing apparatus according to an embodiment starts a wiring operation when the sum of the amount of shot data stored in a buffer memory...
US-9,875,875 Method and apparatus for a porous electrospray emitter
An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least...
US-9,875,868 Locking device for high-voltage switchgear
The device is used for locking an access for actuating two switching devices of high-voltage switchgear with the aid of a drive shaft transmitting drive force...
US-9,875,866 Haptic keyswitch structure and input device
A keyswitch structure includes a keycap layer having a keycap region and a peripheral region adjacent to the keycap region, a circuit layer disposed under the...
US-9,875,864 Keyboard and backlight module
A backlight module includes a masking plate, a light guiding plate, a light emitting unit, a reflective plate and an attaching layer. A plurality of upper...
US-9,875,861 Device and method for switching a direct current
A device switches a direct current. The device contains an operating current branch in which a mechanical switch is arranged, a protective switch connected to...
US-9,875,854 Flexible supercapacitor and method of fabricating the same
A flexible supercapacitor comprising an electrolyte sandwiched between nickel foams electrodeposited with a nano-composite. The nanocomposite comprises of a...
US-9,875,849 Multilayer ceramic electronic component and manufacturing method thereof
A multilayer ceramic electronic component includes: a main body; and a first external electrode disposed on a first surface of the main body and a second...
US-9,875,847 Multilayer ceramic electronic component and method of manufacturing the same
A multilayer ceramic electronic component includes a plurality of dielectric layers; and internal electrodes disposed on the dielectric layers and containing an...
US-9,875,845 Coupling device and coupling assembly for the contact-free transmission of data signals and method for the...
A coupling device serves for the contact-free transmission of data signals between signal conductors of two signal lines with the aid of a coupling structure....
US-9,875,841 Systems and methods for a DC phaseback choke
Phaseback DC choke includes a common core, a first coil formed about the common core, and a second coil formed about the common core in parallel opposing...
US-9,875,837 Coil electronic component
A coil electronic component includes a first coil disposed on a first surface of an insulating substrate; a second coil disposed on a second surface of the...
US-9,875,833 Superconduting coil device comprising coil winding and contacts
A superconducting coil device includes at least one coil winding, including at least one first and one second superconducting strip conductor, the first and...
US-9,875,831 Method for producing a multi-layer varistor component and a multi-layer varistor component
A method for producing a multi-layer varistor component is specified. A main body for the multi-layer varistor component includes a plurality of internal...
US-9,875,830 Modular, exchangeable surge protection system
A surge protection system provides surge protection to one or more circuits. Each circuit is connected to power and a surge protection module bridges the...
US-9,875,827 Method for producing insulated electric wire
A method for producing an insulated electric wire comprises a first step of processing a copper alloy containing a tin and inevitable impurities into a fine...
US-9,875,824 Waterproofing structure, waterproofing method and wire harness
A waterproofing structure includes one or multiple insulated core wires; a shielding member configured to collectively cover the one or multiple insulated core...
US-9,875,822 Aluminum alloy conductor wire, aluminum alloy stranded wire, coated wire, wire harness and method of...
An aluminum alloy conductor wire has a composition comprising Mg: 0.1-1.0 mass %, Si: 0.1-1.20 mass %, Fe: 0.01-1.40 mass %, Ti: 0-0.100 mass %, B: 0-0.030 mass...
US-9,875,815 Fast memory array repair using local correlated electron switch (CES) memory cells
An integrated circuit is provided for self-repair of a memory array. The circuit includes first word lines coupled to first memory rows of the memory array, one...
US-9,875,804 Nonvolatile semiconductor memory device with read voltage setting controller
A nonvolatile semiconductor memory device includes a memory cell array. The memory cells of the memory cell array can be programmed to have different threshold...
US-9,875,800 3D NAND semiconductor device for erasing groups of bit lines
A semiconductor device may include a memory block including memory strings connected to respective bit lines coupled to a substrate and commonly connected to a...
US-9,875,791 Semiconductor device
Provided are a semiconductor device. The semiconductor device includes an SRAM cell including a first pull-up transistor, a first pull-down transistor and a...
US-9,875,780 STT MRAM source line configuration
Improved STT MRAM source line configurations are provided. In one aspect, a STT MRAM array includes: a plurality of cells including magnetic tunnel junctions in...
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