Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,882,082 Compositions and processes for fabrication of rear passivated solar cells
Compositions used in, and methods for, fabricating a rear-passivated silicon solar cell are described. A novel method of opening the back surface for contacting...
US-9,882,081 Photodetector methods and photodetector structures
Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed...
US-9,882,080 High speed photodetector
A photodetector is disclosed. A first layer of the photodetector has a first semiconductor material having a first band gap energy, a first electric field, and...
US-9,882,079 Apparatus and method for collecting and distributing radiation
A system and method for collecting and distributing generated and/or solar radiation. A pulsed distribution subsystem combining a generated radiation source...
US-9,882,078 Integrated back-sheet assembly for photovoltaic module
A process for forming a back-sheet assembly for a photovoltaic module having multiple solar cells with back-side electrical contacts includes providing a...
US-9,882,077 Shingled solar cell module
A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to...
US-9,882,076 Optical tandem photovoltaic cell panels
A solar energy conversion device comprises a vertical stack of at least two panels stacked in a hierarchy from an upper panel to a lower panel with each of the...
US-9,882,075 Light sensor with vertical diode junctions
Light sensors are described that include a trench structure integrated therein. In an implementation, the light sensor includes a substrate having a dopant...
US-9,882,074 Optoelectronic device
An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D)...
US-9,882,073 Structures for bonding a direct-bandgap chip to a silicon photonic device
A composite photonic device comprises a platform, a chip, and a contact layer. The platform comprises silicon. The chip is made of a III-V material. The contact...
US-9,882,072 Solar cell and transparent electrode
Provided is a solar cell including a pair of electrodes, and a photoelectric conversion layer of chalcopyrite structure sandwiched between the pair of...
US-9,882,071 Laser techniques for foil-based metallization of solar cells
Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a semiconductor region can be...
US-9,882,070 Photodetector structures and manufacturing the same
A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front...
US-9,882,069 Biasing voltage generating circuit for avalanche photodiode and related control circuit
A biasing voltage generating circuit for generating a required reverse biasing voltage of an avalanche photodiode (APD) includes: a boost power converter...
US-9,882,068 Monolithic integration techniques for fabricating photodetectors with transistors on same substrate
Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a...
US-9,882,067 Installation system for photovoltaic modules
A solar panel array is formed of a plurality of solar panels juxtaposed with one another along an array axis, and has a support element having first and second...
US-9,882,066 Transcap manufacturing techniques without a silicide-blocking mask
Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first...
US-9,882,064 Transistor and electronic device
A transistor capable of high-speed operation is provided. In a transistor including a back gate electrode, the back gate electrode is provided over a back gate...
US-9,882,063 Thin film transistor and manufacturing method thereof, array substrate and display device
The present disclosure relates to the field of manufacturing technologies for semiconductor devices and provides a thin film transistor and a manufacturing...
US-9,882,062 Semiconductor device and manufacturing method thereof
A first oxide insulating film is formed over a substrate. After a first oxide semiconductor film is formed over the first oxide insulating film, heat treatment...
US-9,882,061 Semiconductor device and manufacturing method thereof
A transistor with favorable electrical characteristics is provided. A minute transistor is provided. Provided is a semiconductor device including a first...
US-9,882,060 Thin film transistor and array substrate, manufacturing methods thereof, and display device
Embodiments of the present invention disclose a thin film transistor and an array substrate, manufacturing methods thereof, and a display device, which relate...
US-9,882,059 Semiconductor device
To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor...
US-9,882,058 Semiconductor device
A semiconductor device in which variation in electrical characteristics between transistors is reduced is provided. A transistor where a channel is formed in an...
US-9,882,057 Low temperature poly-silicon thin film transistor and manufacturing method thereof, array substrate and display...
A low temperature poly-silicon thin film transistor and its manufacturing method, an array substrate and a display device are provided. The method comprises:...
US-9,882,056 Thin film transistor and method of manufacturing the same
A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern....
US-9,882,055 TFT substrate structure and manufacturing method thereof
A manufacturing method of a TFT substrate structure is provided, in which a graphene layer is formed on a semiconductor layer and after the formation of a...
US-9,882,054 FinFET with merged, epitaxial source/drain regions
A FinFET is provided. The FinFET includes a substrate. A plurality of fin structures are defined on the substrate. A gate structure crosses each fin structure....
US-9,882,053 Molded dielectric fin-based nanostructure
An embodiment concerns selective etching of a structure (e.g., a fin) to form a void with the shape of the original structure. This void then functions as a...
US-9,882,052 Forming defect-free relaxed SiGe fins
A method of forming defect-free relaxed SiGe fins is provided. Embodiments include forming fully strained defect-free SiGe fins on a first portion of a Si...
US-9,882,051 Fin field effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel...
Fin Field Effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions are disclosed. In one aspect, a FinFET is...
US-9,882,050 Strained CMOS on strain relaxation buffer substrate
An advanced FinFET structure is described. The structure includes a strain relaxation buffer (SRB) substrate. A set of cut silicon fins is on the SRB substrate....
US-9,882,049 Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method
This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device includes trenched gates each having...
US-9,882,048 Gate cut on a vertical field effect transistor with a defined-width inorganic mask
A method of cutting a gate on a VFET includes depositing a memorization layer around a spacer on a sidewall of the field effect transistor. A planarizing layer...
US-9,882,047 Self-aligned replacement metal gate spacerless vertical field effect transistor
A method of making a vertical field effect transistor includes forming a semiconductor nanowire that extends from a substrate surface. A first sacrificial layer...
US-9,882,046 Ultra high voltage semiconductor device with electrostatic discharge capabilities
A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having...
US-9,882,045 Vertical conduction integrated electronic device protected against the latch-up and relating manufacturing process
A vertical conduction integrated electronic device including: a semiconductor body; a trench that extends through part of the semiconductor body and delimits a...
US-9,882,044 Edge termination for super-junction MOSFETs
Edge termination for super-junction MOSFETs. In accordance with an embodiment of the present invention, a super-junction metal oxide semiconductor field effect...
US-9,882,043 Semiconductor device with trench termination structure
The present disclosure relates to a semiconductor device in which a trench termination structure is applied. There is disclosed a semiconductor device of which...
US-9,882,042 Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride...
Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while...
US-9,882,041 HEMT having conduction barrier between drain fingertip and source
A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is...
US-9,882,040 Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility
A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure...
US-9,882,039 Fabrication technique for high frequency, high power group III nitride electronic devices
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication...
US-9,882,038 Method of manufacturing a bipolar semiconductor switch
A method for forming a bipolar semiconductor switch includes providing a semiconductor body which has a main surface, a back surface arranged opposite to the...
US-9,882,037 IGBT-free wheeling diode combination with field stop layer in drift region
A semiconductor device includes a middle field stop layer having a first conductivity type impurity concentration higher than a drift layer and arranged at a...
US-9,882,036 Semiconductor device
A semiconductor device includes first and second electrodes and a silicon carbide layer located between the first and second electrodes. A plurality of gate...
US-9,882,035 Trench insulated gate bipolar transistor and manufacturing method thereof
A trench insulated gate bipolar transistor includes trenches formed in the front surface of a first conductivity type drift layer, a plurality of gate...
US-9,882,034 Bipolar transistor and method of manufacturing the same
A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region...
US-9,882,033 Method of manufacturing a non-volatile memory cell and array having a trapping charge layer in a trench
A memory cell formed by forming a trench in the surface of a substrate. First and second spaced apart regions are formed in the substrate with a channel region...
US-9,882,032 Structure and method for FinFET device with buried sige oxide
A method includes forming isolation features on a substrate, thereby defining an active region on the semiconductor substrate; recessing the active region to...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.