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Patent # Description
US-9,881,825 Reduced capacity carrier and method of use
A substrate transport apparatus is provided. The apparatus has a casing and a door. The casing is adapted to form a controlled environment therein. The casing...
US-9,881,824 Transfer apparatus and control method thereof
A transfer apparatus that includes a moving unit capable of moving with respect to a base and transferring an article with the moving unit protruding from the...
US-9,881,823 Automated material handling system for semiconductor manufacturing based on a combination of vertical carousels...
A highly efficient Automated Material Handling System (AMHS) that allows an overhead hoist transport vehicle to load and unload Work-In-Process (WIP) parts...
US-9,881,822 Multi-stepped boat assembly for receiving semiconductor packages
A multi-stepped boat assembly includes a stack boat having at least one stack hole configured to receive a first semiconductor package and a second...
US-9,881,821 Control wafer making device and method for measuring and monitoring control wafer
A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In...
US-9,881,820 Front opening ring pod
A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first...
US-9,881,819 Thermal processing apparatus for heating substrate, and susceptor
A semiconductor wafer with (100) plane orientation has two orthogonal cleavage directions. A notch is provided so as to indicate one of these directions. During...
US-9,881,818 Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device, includes: a preparation step, a flow step, and a processing step. The preparation step prepares an etching...
US-9,881,817 Precision substrate material multi-processing using miniature-column charged particle beam arrays
Methods, tools and systems for patterning of substrates using charged particle beams without photomasks, without a resist layer, using multiple different...
US-9,881,816 Cleaning composition and method for semiconductor device fabrication
A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a...
US-9,881,815 Substrate cleaning method, substrate cleaning device, and vacuum processing device
A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered...
US-9,881,814 Apparatus for manufacturing semiconductor package and method for manufacturing semiconductor package using the same
The inventive concepts provide an apparatus for manufacturing a semiconductor package and a method for manufacturing a semiconductor package using the same. The...
US-9,881,813 Mounting structure and method for producing mounting structure
A mounting structure, including: a first component that has a first bump; a second component that has a second bump; a mounting component that has a primary...
US-9,881,812 Power module and fabrication method for the same
The power module includes: a first metallic circuit pattern, a semiconductor device disposed on the first metallic circuit pattern; a leadframe electrically...
US-9,881,811 Thin-film transistor substrate manufacturing method and thin-film transistor substrate manufactured with same
The present invention provides a TFT substrate manufacturing method and a TFT substrate manufactured with the method. The TFT substrate manufacturing method of...
US-9,881,810 Structures, methods and applications for electrical pulse anneal processes
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure...
US-9,881,809 Semiconductor device and method of fabricating the same
A method of fabricating a semiconductor device is provided. A dielectric layer is formed on a barrier layer. A first opening is formed in the dielectric layer...
US-9,881,808 Mask and pattern forming method
According to one embodiment, a mask includes a substrate, first and second pattern portions. The substrate includes a first surface, and the substrate is light...
US-9,881,807 Method for atomic layer etching
A method of etching a layer on a substrate includes disposing a substrate in a plasma processing system configured to facilitate an etching process, performing...
US-9,881,806 Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to...
US-9,881,805 Silicon selective removal
A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote...
US-9,881,804 Method and system for high precision etching of substrates
This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a plasma...
US-9,881,803 Chemical mechanical polishing method using slurry composition containing N-oxide compound
The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity...
US-9,881,802 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include a tetravalent metal element hydroxide, and produce a...
US-9,881,801 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include a tetravalent metal element hydroxide, and produce a...
US-9,881,800 Structure and method for high performance large-grain-poly silicon backplane for OLED applications
Large grain polysilicon films can be exfoliated on a handle substrate, such as a glass or glass-ceramic substrate. The large grain polysilicon can have high...
US-9,881,799 Substrate liquid processing apparatus, substrate liquid processing method, and computer-readable storage medium
Disclosed is a substrate liquid processing apparatus including a processing liquid storage unit that stores a processing liquid; a processing liquid supply unit...
US-9,881,798 Metal cap integration by local alloying
A middle-of-line interconnect structure including copper interconnects and integral copper alloy caps provides effective electromigration resistance. A metal...
US-9,881,797 Replacement gate electrode with multi-thickness conductive metallic nitride layers
Gate electrodes having different work functions can be provided by providing conductive metallic nitride layers having different thicknesses in a replacement...
US-9,881,796 Method for manufacturing molybdenum oxide-containing thin film
Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a...
US-9,881,795 Method of fabricating semiconductors
A method of manufacturing a semiconductor includes applying a planarization material to a substrate and forming an opening in the planarization material. The...
US-9,881,794 Semiconductor methods and devices
In some embodiments, a method of a semiconductor process includes conformally forming a spacer layer over a plurality of mandrels that are disposed over a mask...
US-9,881,793 Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (DSA) patterning
A material stack is formed on the surface of a semiconductor substrate. The top layer of the material stack comprises at least an organic planarization layer. A...
US-9,881,792 Processes for shaping nanomaterials
Processes for shaping one- and two-dimensional nanomaterials, and thereby inducing local strains therein preferably to control one or more of their material...
US-9,881,791 Method for producing an oxide film using a low temperature process, an oxide film and an electronic device thereof
Disclosed are a method for producing an oxide film using a low temperature process, an oxide film and an electronic device. The method for producing an oxide...
US-9,881,790 Method to enhance growth rate for selective epitaxial growth
Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and...
US-9,881,789 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of...
US-9,881,788 Back side deposition apparatus and applications
The embodiments disclosed herein pertain to methods and apparatus for depositing stress compensating layers and sacrificial layers on either the front side or...
US-9,881,787 Deposition methods for uniform and conformal hybrid titanium oxide films
Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich...
US-9,881,786 Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures thereof
A method of forming a nanostructure comprises forming a directed self-assembly of nucleic acid structures on a patterned substrate. The patterned substrate...
US-9,881,785 Method of preventing charge accumulation in manufacture of semiconductor device
A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer...
US-9,881,784 Substrate processing method, substrate processing apparatus, and storage medium
Disclosed is a substrate processing method. The method includes: supplying a rinse liquid, IPA, a first fluorine-containing organic solvent, a second...
US-9,881,783 Method for processing semiconductor wafer
In a wafer processing method by which, by using, as a reference surface, a flat surface obtained by applying a curable material to the whole of one surface of a...
US-9,881,782 Method for separating ions according to a physicochemical property
A method of separating ions according to a physicochemical property is disclosed. The method comprises causing ions to perform a plurality of cycles along or...
US-9,881,780 Multi-reflecting mass spectrometer with high throughput
Method and embodiments are provided for tandem mass spectrometer designed for extremely large charge throughput up to 1E+10 ion/sec. In one operation mode, the...
US-9,881,779 Auxiliary gas inlet
There is provided a method of introducing ions into a mass spectrometer, comprising ionising a sample using a continuous ionisation source to form a plurality...
US-9,881,778 Hybrid acquisition method incorporating multiple dissociation techniques
A method is disclosed wherein parent or precursor ions are fragmented or reacted according to a first fragmentation or reaction mode, and when an ion of...
US-9,881,777 Molecular diagnostics in personalized dermatology, dermatopathology and cosmetics
The present disclosure relates generally to methods and apparatus for determining components and associated conditions in a dermatological sample, and preparing...
US-9,881,776 Monitoring liquid chromatography elution to determine when to perform a lockmass calibration
A method of mass spectrometry is disclosed that comprises acquiring mass spectral data during a single experimental run or acquisition of a mass spectrometer...
US-9,881,775 Waveform for improved energy control of sputtered species
This disclosure describes systems and methods for regulating the density and kinetic energy of ions in a sputtering deposition chamber. A pulsed DC waveform...
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