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Patent # Description
US-9,887,243 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a...
US-9,887,242 Complementary metal oxide semiconductor element and manufacture method thereof
Disclosed is a CMOS element. The CMOS element comprises a substrate, a first metal layer, an insulation layer and a first type metal oxide semiconductor layer;...
US-9,887,241 Display device and electronic apparatus
A display device in which variations in luminance due to variations in characteristics of transistors are reduced, and image quality degradation due to...
US-9,887,240 Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switches
A non-volatile data storage device comprises pairs of immediately adjacent and isolated-from-one-another local bit lines that are independently driven by...
US-9,887,239 Memory arrays
Some embodiments include memory arrays. The memory arrays can have global bitlines extending along a first horizontal direction, vertical local bitlines...
US-9,887,238 Semiconductor device and method for fabricating the same
A semiconductor device and a method for fabricating the semiconductor device have been provided. The method for fabricating a semiconductor device includes the...
US-9,887,237 Magnetic storage device
According to an embodiment, a magnetic storage device includes a semiconductor region including a trench; a gate electrode disposed in the trench; an insulation...
US-9,887,236 Display device and electronic device
To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture...
US-9,887,235 Pixel isolation device and fabrication method
Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is...
US-9,887,234 CMOS image sensor and method for forming the same
A complementary metal oxide semiconductor (CMOS) image sensor and a method for fabricating the same are provided. An example CMOS image sensor includes first...
US-9,887,233 Semiconductor device and manufacturing method therefor
Disclosed are a semiconductor device and a method for manufacturing the semiconductor device that is capable of adequately reducing the influence of...
US-9,887,232 Photodetector circuit and semiconductor device
To provide a photodetector circuit capable of obtaining signals in different periods without being affected by characteristics of a photoelectric conversion...
US-9,887,231 Solid-state imaging device and method of manufacturing the device
A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating...
US-9,887,230 Separation type unit pixel of image sensor having three-dimensional structure
The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing...
US-9,887,229 Sensing chip package and a manufacturing method thereof
This present invention provides a method of manufacturing a chip scale sensing chip package, comprising the steps of: providing a sensing device wafer having a...
US-9,887,228 Image sensor with oblique pick up plug and semiconductor structure comprising the same
An image sensor includes a substrate, multiple pixel regions separately disposed in the substrate, and a pick up region including a doping region and a pick up...
US-9,887,227 Solid-state image sensor and method of manufacturing the same
A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having...
US-9,887,226 Solid-state imaging device
An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the...
US-9,887,225 Pixel with spacer layer covering photodiode
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. An isolation feature is disposed in the semiconductor substrate...
US-9,887,224 Detection apparatus having covering layer disposed on interlayer insulating layer in a pixel-array outside...
A detection apparatus includes a plurality of conversion elements, an interlayer insulating layer, and a covering layer. Each of the plurality of conversion...
US-9,887,223 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a...
US-9,887,222 Method of manufacturing optical apparatus
A method of manufacturing an optical apparatus is provided. The method includes arranging a photo device above a substrate with an adhesive located between the...
US-9,887,221 Optical modules including customizable spacers for focal length adjustment and/or reduction of tilt, and...
Optical modules are made using customizable spacers to reduce variations in the focal lengths of the optical channels, to reduce the occurrence of tilt of the...
US-9,887,220 Method for manufacturing imaging apparatus, and imaging apparatus
A gate electrode of a field effect transistor is formed. Next, an offset spacer film with a double-layer structure including a silicon oxide film as a...
US-9,887,219 Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device
The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which...
US-9,887,218 Imaging device, operating method thereof, and electronic device
An imaging device whose dynamic range is broadened is provided. The imaging device includes a pixel including a first photoelectric conversion element and a...
US-9,887,217 Pixels of image sensors, image sensors including the pixels, and image processing systems including the image...
Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident...
US-9,887,216 Methods for manufacturing poly-silicon thin film transistor and array substrate
The present disclosure provides a poly-silicon TFT, its manufacturing method, an array substrate and its manufacturing method. The method for manufacturing the...
US-9,887,215 Display module manufacturing method and display module
A display module substrate and a manufacturing method thereof are provided. The display module substrate includes a substrate body and a plurality of signal...
US-9,887,214 Array substrate, method for repairing disconnection of data line on array substrate, and display device
An array substrate, a method for repairing disconnection of the data line and a display device are disclosed. The array substrate is divided into a plurality of...
US-9,887,213 Method for manufacturing thin film transistor and related active layer for thin film transistor, thin film...
The present disclosure provides a method for forming an active layer with a pattern. The method includes forming an amorphous silicon layer and forming a...
US-9,887,212 Semiconductor device and electronic device
A semiconductor device that can store multilevel data is provided. A circuit includes a transistor. The circuit includes another circuit including a terminal,...
US-9,887,211 Semiconductor device and method of manufacturing the same
A semiconductor device using an SOI (Silicon On Insulator) substrate, capable of preventing malfunction of MISFETs (Metal Insulator Semiconductor Field Effect...
US-9,887,210 Semiconductor device
A semiconductor device includes a substrate including a first active region and a second active region, the first active region having a conductivity type that...
US-9,887,209 Standard cell architecture with M1 layer unidirectional routing
A standard cell CMOS device includes metal oxide semiconductor transistors having gates formed from gate interconnects. The gate interconnects extend in a first...
US-9,887,208 Vertical memory device
A memory device may include a peripheral region and a cell region. The peripheral region may include a first substrate, a plurality of circuit elements disposed...
US-9,887,207 Three dimensional NAND device having dummy memory holes and method of making thereof
A monolithic three dimensional NAND string includes a plurality of control gate electrodes extending substantially parallel to a major surface of a substrate, a...
US-9,887,206 Method of making split gate non-volatile memory cell with 3D FinFET structure
A non-volatile memory cell, and method of making, that includes a semiconductor substrate having a fin shaped upper surface with a top surface and two side...
US-9,887,205 Ferroelectric mechanical memory and method
A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the...
US-9,887,204 Memory cells
A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor...
US-9,887,203 3D semiconductor device and structure
A 3D semiconductor device including: a first layer including a first monocrystalline layer, the first layer including first logic cells; a second layer...
US-9,887,202 Semiconductor device and method of manufacturing the same
The inventive concepts provide semiconductor devices and methods of manufacturing the same. One semiconductor device includes a substrate, a device isolation...
US-9,887,201 One-time programmable memory and method for making the same
A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and...
US-9,887,200 Dynamic random access memory
A dynamic random access memory (DRAM) includes a substrate, isolation structures, buried word lines, bit lines, and capacitors. The substrate includes active...
US-9,887,199 Semiconductor devices including a peripheral circuit region and first and second memory regions, and related...
Semiconductor devices are provided. A semiconductor device includes a peripheral circuit region and a first memory region that are side by side on a substrate....
US-9,887,198 Semiconductor devices with sidewall spacers of equal thickness
Semiconductor structures with different devices each having spacers of equal thickness and methods of manufacture are disclosed. The method includes forming a...
US-9,887,197 Structure containing first and second vertically stacked nanosheets having different crystallographic orientations
A semiconductor structure is provided that includes a substrate comprising a first semiconductor material having a first crystallographic orientation and a...
US-9,887,196 FinFET including tunable fin height and tunable fin width ratio
A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to...
US-9,887,195 Coaxial connector feed-through for multi-level interconnected semiconductor wafers
A semiconductor, silicon-on-oxide (SOI) structure having a silicon layer disposed on a bottom oxide (BOX) insulating layer. A deep trench isolation (DTI)...
US-9,887,194 Semiconductor devices and methods of fabricating the same
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a fin which comprises long sides and a first short...
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