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Patent # Description
US-9,892,940 Spray assembly and wet etching device having the same
A spray assembly including a spray pipe with a bottom provided with a plurality of first through holes, each having a nozzle, wherein the nozzle includes a...
US-9,892,939 Substrate treating apparatus and chemical recycling method
Provided is a substrate treating apparatus. The substrate treating apparatus according to embodiments of the present invention may include a cleaning chamber...
US-9,892,938 Microelectronics package with inductive element and magnetically enhanced mold compound component
The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for...
US-9,892,937 Encapsulated dies with enhanced thermal performance
The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip...
US-9,892,936 Packaged semiconductor device having leadframe features preventing delamination
A semiconductor device has a leadframe with a first (401a) and a parallel second surface, and an assembly pad (410) bordered by two opposing sides, which...
US-9,892,935 Limiting electronic package warpage with semiconductor chip lid and lid-ring
An electronic package includes a carrier, semiconductor chip, a lid, and a lid-ring. The carrier includes a top surface and a bottom surface configured to be...
US-9,892,934 Method for removing halogen and method for manufacturing semiconductor device
A method of removing a halogen includes performing a heating treatment on a halogen-containing film at a pressure higher than 1 atm and a temperature higher...
US-9,892,933 Lithography using multilayer spacer for reduced spacer footing
A method embodiment for patterning a semiconductor device includes forming a plurality of mandrels over a substrate, and forming a multilayer spacer layer over...
US-9,892,932 Chemistries for TSV/MEMS/power device etching
Replacement chemistries for the cC.sub.4F.sub.8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have...
US-9,892,931 Semiconductor manufacturing apparatus and method thereof
In some embodiments of the present disclosure, an apparatus includes an ionizer. The ionizer is configured to dispatch a reactive ion on a surface. The...
US-9,892,930 Semiconductor memory device and method for manufacturing same
A semiconductor memory device includes a first electrode layer; a second electrode layer provided above the first electrode layer; a first insulating oxide...
US-9,892,929 Semiconductor manufacturing method and semiconductor device
A semiconductor manufacturing method includes forming a first film on an upper surface of a substrate. The semiconductor manufacturing method includes forming...
US-9,892,928 Electrically erasable programmable non-volatile memory cell structure
A NVM cell structure includes a semiconductor substrate having a first conductivity type, a first well region having a second conductivity type, a floating gate...
US-9,892,927 System and method for mitigating oxide growth in a gate dielectric
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in...
US-9,892,926 Replacement low-k spacer
Forming a semiconductor structure includes forming a dummy gate stack on a substrate including a sacrificial spacer on the peripheral of the dummy gate stack....
US-9,892,925 Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy
A method of making a semiconductor device includes forming a gate covered by a hard mask over a substrate; disposing a mask over the gate and the hard mask;...
US-9,892,924 Semiconductor structure and manufacturing method thereof
A semiconductor structure comprising a first layer, a metal layer and a second layer is disclosed. The first layer comprises a recessed surface. The metal layer...
US-9,892,923 Method for tuning the effective work function of a metal
The disclosed technology generally relates to integrated circuit devices and methods of forming the same, and more particularly to metal electrodes whose...
US-9,892,922 Methods for fabricating integrated circuits with triple gate oxide devices
A method of fabricating an integrated circuit includes forming a plurality of polysilicon gate electrode structures over a plurality of fin-shaped channel...
US-9,892,921 Interconnect structure and method for forming the same
Various embodiments provide semiconductor devices and methods for forming the same. A base including a substrate and an interlayer dielectric layer is provided....
US-9,892,919 Semiconductor device manufacturing method
A first nickel film is deposited inside a contact hole of an interlayer dielectric formed on an n.sup.+-type SiC substrate. Irradiation with a first laser is...
US-9,892,918 Method of forming pattern of semiconductor device
A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different...
US-9,892,917 Plasma assisted atomic layer deposition of multi-layer films for patterning applications
Methods and apparatus for depositing nanolaminate films are provided. In various embodiments, the nanolaminate film may be deposited over a core layer, which...
US-9,892,916 Manufacturing method of package substrate and package manufacturing method of semiconductor device
A manufacturing method of a package substrate is provided. A conductive substrate is provided. A first photoresist layer is patterned to form first openings. A...
US-9,892,915 Hard mask composition, carbon nanotube layer structure, pattern forming method, and manufacturing method of...
A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask...
US-9,892,914 Orientation layer for directed self-assembly patterning process
Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a...
US-9,892,913 Radial and thickness control via biased multi-port injection settings
A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be...
US-9,892,912 Method of manufacturing stacked nanowire MOS transistor
Methods of manufacturing stacked nanowires MOS transistors are disclosed. In one aspect, the method includes forming a plurality of fins along a first direction...
US-9,892,911 Epitaxial structure with air voids in shape of trapezoid
An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is...
US-9,892,910 Method and structure for forming a dense array of single crystalline semiconductor nanocrystals
A dense array of semiconductor single crystalline semiconductor nanocrystals is provided in the present application by forming an amorphous semiconductor...
US-9,892,909 Film forming method and film forming apparatus
A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw...
US-9,892,908 Process feed management for semiconductor substrate processing
Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a...
US-9,892,907 Atmospheric-pressure plasma processing apparatus for substrates
An Atmospheric-Pressure Plasma processing apparatus used for Atmospheric-Pressure Plasma processing of substrates, comprises a radio-frequency generator and two...
US-9,892,906 Lamp and headlighting arrangement for obtaining a color appearance in an automotive headlight
A lamp 10 is described which may be used in an automotive headlight 12. The lamp 10 comprises at least one filament 20 within a transparent lamp vessel 16. A...
US-9,892,905 Stranded outer lead wire assembly for quartz pinch seals
A stranded outer lead wire assembly for a quartz pinch sealed lamp. The stranded outer lead wire assembly is a butt welded connection of a refractory metal...
US-9,892,904 Light-emitting device
There is provided a light-emitting device capable of suppressing a decrease in a light emission amount. A light-emitting device including a container member...
US-9,892,903 Systems and methods for coupling a laser beam to a mass spectrometer
A mass spectrometry system includes a laser source, a trapping volume, first and second beam deflectors, and a deflector controller. The first and second beam...
US-9,892,902 Ion radiation device and surface analyzer using said device
Used as an ion beam guiding unit for introducing primary ions to the surface of the sample is an ion optical system of reflectron TOFMS for achieving time...
US-9,892,901 Mass spectrometry device
A mass spectrometry device that can perform highly robust, highly sensitive, and low-noise analysis and addresses the problems of preventing reductions in ion...
US-9,892,900 Apparatus and method for improving throughput in spectrometry
The invention provides a method and apparatus for improving throughput in spectrometry, the method comprising the steps of loading sample-containing liquid into...
US-9,892,899 Ion manipulation device for guiding or confining ions in an ion processing apparatus
An ion manipulation device for guiding or confining ions in an ion processing apparatus. The device has a first circuit board, wherein at least one first...
US-9,892,898 Method of improved paper based mass spectrometry and novel wick support structures
The disclosed invention relates to electrospray and more specifically to wick based electrospray of analytes. The disclosed invention provides a means for...
US-9,892,897 Method of controlling a DC power supply
A method of controlling a DC power supply to change a DC offset voltage applied to a component for manipulating charged particles. The method includes, whilst...
US-9,892,896 MS/MS analysis using ECD or ETD fragmentation
A method of mass spectrometry is disclosed comprising: providing supercharged analyte ions; and supplying electrons or reagent ions to said analyte ions so as...
US-9,892,895 Method for analyzing small molecule components of a complex mixture in a multi-sample process, and associated...
A method, apparatus, and computer-readable storage medium for analyzing sample data from a component separation/mass spectrometer system. A profile plot is...
US-9,892,894 Ion mobility separation device
An ion mobility separator and a method of separating ions according to their ion mobility are disclosed. An RF ion guide is provided having a plurality of...
US-9,892,893 Cooled photomultiplier tube based light detector with reduced condensation, and related apparatuses and methods
A light detector includes a cooling device between a photomultiplier tube (PMT) device and a heat sink. A thermally conductive shield encloses the PMT device...
US-9,892,892 Method of manufacturing electron multiplier body, photomultiplier tube, and photomultiplier
A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and...
US-9,892,891 Li-containing phosphoric-acid compound sintered body and sputtering target, and method for manufacturing said...
Provided is a Li-containing phosphoric-acid compound sintered body of both high relative density and very small crystal grain diameter with reduced incidence of...
US-9,892,890 Narrow source for physical vapor deposition processing
A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length...
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