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Patent # Description
US-1,000,2957 Shield wrap for a heterostructure field effect transistor
Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate electrode...
US-1,000,2956 High electron mobility transistor
A high electron mobility transistor includes a buffer layer disposed on a substrate. A barrier layer is disposed on the buffer layer. A channel layer is...
US-1,000,2955 High-electron-mobility transistor and manufacturing method thereof
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is...
US-1,000,2954 Fin-based semiconductor devices and methods
Embodiments of semiconductor devices, integrated circuit devices and methods are disclosed. In some embodiments, a semiconductor device may include a first fin...
US-1,000,2953 Semiconductor device and method of manufacturing the same
A performance of a semiconductor device is improved. A semiconductor device includes two element portions and an interposition portion interposed between the...
US-1,000,2952 Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
A silicon carbide (SiC) semiconductor device, including a SiC substrate, a first SiC layer formed on the substrate, first and second impurity layers selectively...
US-1,000,2951 Semiconductor device
A semiconductor device may include a trench, a gate insulating film covering the trench, first conductive type carrier-injected regions intermittently appearing...
US-1,000,2950 Bipolar transistor and method for producing the same
A bipolar transistor has a subcollector layer and a stack of collector, base, and emitter layers on the subcollector layer. On the subcollector layer are...
US-1,000,2949 Semiconductor device
An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source...
US-1,000,2948 FinFET having highly doped source and drain regions
A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin...
US-1,000,2947 FinFETs with vertical fins and methods for forming the same
In a method for forming a device, a (110) silicon substrate is etched to form first trenches in the (110) silicon substrate, wherein remaining portions of the...
US-1,000,2946 Method of manufacturing a semiconductor device
Disclosed is a method of manufacturing a semiconductor device. The semiconductor device may be manufactured by forming a trench extended in a first direction...
US-1,000,2945 Composite spacer enabling uniform doping in recessed fin devices
A semiconductor device that includes at least one fin structure and a gate structure present on a channel portion of the fin structure. An epitaxial...
US-1,000,2944 Semiconductor structure
A method for forming a semiconductor structure includes providing a semiconductor substrate having a metal gate structure formed on the semiconductor substrate;...
US-1,000,2943 Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the...
US-1,000,2942 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a first semiconductor layer made of a nitride semiconductor and formed on a substrate, a second semiconductor layer made of a...
US-1,000,2941 Hybrid gate dielectrics for semiconductor power devices
In a general aspect, a power semiconductor device can include a silicon carbide (SiC) substrate and a SiC epi-layer disposed on the SiC substrate. The device...
US-1,000,2940 Spacer chamfering gate stack scheme
A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are...
US-1,000,2939 Nanosheet transistors having thin and thick gate dielectric material
Provided is a method for forming a semiconductor structure. In embodiments, the method includes forming multiple channel nanosheets in multiple first stacks...
US-1,000,2937 Shared metal gate stack with tunable work function
Semiconductor devices and methods of forming the same include forming a work function stack over semiconductor fins in a first region and a second region, the...
US-1,000,2936 Titanium aluminum and tantalum aluminum thin films
A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one...
US-1,000,2935 Semiconductor devices and structures and methods of formation
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region...
US-1,000,2934 Semiconductor device
A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first...
US-1,000,2933 Semiconductor device structure with cap layer with top and bottom portions over gate electrode
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a gate stack structure formed over a...
US-1,000,2932 Self-aligned contact protection using reinforced gate cap and spacer portions
A method includes providing a starting structure, the starting structure including a semiconductor substrate, sources and drains, a hard mask liner layer over...
US-1,000,2931 Silicon carbide semiconductor device
A silicon carbide semiconductor device capable of effectively increasing a threshold voltage and a method for manufacturing the silicon carbide semiconductor...
US-1,000,2930 Forming a contact layer on a semiconductor body
Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move...
US-1,000,2929 Reduction of defect induced leakage in III-V semiconductor devices
A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 10.sup.8 cm.sup.-2....
US-1,000,2928 Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface...
US-1,000,2927 Transparent electrodes and electronic devices including the same
A transparent electrode includes a substrate; a first layer disposed on the substrate, the first layer including a graphene mesh structure, the graphene mesh...
US-1,000,2926 Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy
A semiconductor structure is provided that includes a fin structure of, from bottom to top, a semiconductor punch through stop (PTS) doping fin portion, a...
US-1,000,2925 Strained semiconductor device
A semiconductor device comprises a first semiconductor fin having a first width, the first semiconductor fin is arranged on a first portion of the strain...
US-1,000,2924 Devices including high percentage SiGe fins formed at a tight pitch and methods of manufacturing same
A method for manufacturing a semiconductor device comprises forming a plurality of silicon fins on a substrate, wherein the plurality of silicon fins are spaced...
US-1,000,2923 Techniques for forming finFET transistors with same fin pitch and different source/drain epitaxy configurations
In one aspect, a method of forming a finFET device includes: partially forming fins in first/second regions of a substrate; selectively forming spacers on...
US-1,000,2922 Process to etch semiconductor materials
The present disclosure describes a method which can selectively etch silicon from silicon/silicon-germanium stacks or silicon-germanium from ...
US-1,000,2920 System and method for edge termination of super-junction (SJ) devices
The subject matter disclosed herein relates to super-junction (SJ) power devices and, more specifically, to edge termination techniques for SJ power devices. A...
US-1,000,2919 High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated...
US-1,000,2918 Display substrates, methods of manufacturing the same and display devices including the same
Display substrates, methods of manufacturing the same and display devices including the same disclosed. In one aspect, a display substrate includes a base...
US-1,000,2917 Circuit and method for repairing signal line disconnection and display panel
The present disclosure provides a circuit and method for repairing signal line disconnection and a display panel associated therewith. The circuit comprises a...
US-1,000,2916 Organic light-emitting diode display
An organic light-emitting diode display is disclosed. In one aspect, the display includes a semiconductor layer including a driving channel, a first gate...
US-1,000,2915 Micro light-emitting diode display panel
The invention provides a micro LED display panel, by disposing a plurality of active areas (2) on the substrate (1) arranged in an array, and a plurality of...
US-1,000,2914 Method of manufacturing a display apparatus having pixels areas with different thicknesses
A method of manufacturing a display apparatus having a base with a plurality of pixel electrode and pixel definition layers, wherein the base is divided into a...
US-1,000,2913 Method of manufacturing organic light-emitting display apparatus
A method of manufacturing an organic light-emitting display apparatus including forming a first electrode on a substrate, forming a pixel defining layer on the...
US-1,000,2912 Organic light emitting device, display device having the same, and method of manufacturing display device
An organic light emitting device includes four sub-organic light emitting devices. The first device includes a first anode, a first common light emitting...
US-1,000,2911 Display back plate and fabricating method thereof and display device
The present disclosure provides a display back plate and a fabricating method thereof and a display device. The display back plate includes a base layer. A...
US-1,000,2910 Organic light emitting diode display device
An organic light emitting diode display device according to an embodiment includes a substrate having first and second pixel regions and a driving region...
US-1,000,2909 Solid-state image sensor, method of producing the same, and electronic apparatus
A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting...
US-1,000,2908 Logic elements comprising carbon nanotube field effect transistor (CNTFET) devices and methods of making same
Inverter circuits and NAND circuits comprising nanotube based FETs and methods of making the same are described. Such circuits can be fabricating using field...
US-1,000,2907 Semiconductor device and method of manufacturing same
A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the...
US-1,000,2906 Method for fabricating an array of diodes, in particular for a non-volatile memory, and corresponding device
The array of diodes comprises a matrix plane of diodes arranged according to columns in a first direction and according to rows in a second direction orthogonal...
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