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Patent # Description
US-1,000,8640 Semiconductor light emitting apparatus and method of manufacturing same
A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one...
US-1,000,8639 Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component
A method for producing optoelectronic semiconductor components (100) is specified, wherein a carrier (1) having a carrier main side (11) is provided....
US-1,000,8638 Method for manufacturing optical element for backlight unit and optical element and optical element array...
The present invention relates to a method of manufacturing an optical device for a back light unit, and an optical device and an optical device array...
US-1,000,8637 Light emitter devices and methods with reduced dimensions and improved light output
Light emitter devices and methods with reduced dimensions and improved light output are provided. In one embodiment, a light emitter device includes a submount...
US-1,000,8636 Light-emitting device
A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength .lamda....
US-1,000,8635 Semiconductor light-emitting element
Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the...
US-1,000,8634 Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same
A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a...
US-1,000,8633 Light-emitting diode and lighting system
Disclosed are a light emitting diode and a lighting system having the same. The light emitting diode according to an embodiment may include a first electrode...
US-1,000,8631 Coated semiconductor nanocrystals and products including same
A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature...
US-1,000,8630 Display device
An inorganic insulating film containing nitrogen, which has high adhesion to a sealant and an excellent effect of blocking hydrogen, water, and the like, is...
US-1,000,8629 Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
Light emitting devices having an enhanced degree of polarization, P.sub.D, and methods for fabricating such devices are described. A light emitting device may...
US-1,000,8628 Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template...
A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template...
US-1,000,8627 Photovoltaic cell and photovoltaic cell manufacturing method
A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a...
US-1,000,8626 Optical coupling device
An optical coupling device includes a light-emitting element, a light-receiving element that faces the light-emitting element, a lead frame that has a first...
US-1,000,8625 Atomic layer deposition for photovoltaic devices
A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a...
US-1,000,8624 Embedded junction in hetero-structured back-surface field for photovoltaic devices
A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field...
US-1,000,8623 Inverted metamorphic multijunction solar cells having a permanent supporting substrate
The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth...
US-1,000,8622 Solar cell, method for manufacturing same, solar cell module and wiring sheet
The solar cell includes: a first metal seed layer and a first plating layer provided on a first surface of a photoelectric conversion section; a second metal...
US-1,000,8621 Controlling of photo-generated charge carriers
Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate...
US-1,000,8620 Method of making gallium antimonide near infrared photodetector
The method of making a gallium antimonide near infrared photodetector is a physical vapor deposition-based method of forming a thin film of gallium antimonide...
US-1,000,8619 Photosensitive and heat-resistant material, method for producing same and use thereof
A tin-based material includes: from 50 to 100 wt. parts of grapheme; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of...
US-1,000,8618 Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber...
US-1,000,8617 Co-extruded multi-layer polyester films having hydrolytic stability and improved delamination resistance
A co-extruded multi-layer biaxially oriented polyester film comprising a primary polyester layer and a dissimilar secondary polyester layer adjacent to the...
US-1,000,8616 Electronic device having Schottky diode
The electronic device having a Schottky diode includes first and second electrodes disposed on a semiconductor substrate and spaced apart from each other. A...
US-1,000,8615 Semiconductor device and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a...
US-1,000,8614 Dual channel transistor
A dual channel transistor includes a first gate electrode, a second gate electrode, a first gate insulation layer, a second gate insulation layer, a silicon...
US-1,000,8613 Thin film transistor, array substrate and method for fabricating the same, display device
The present disclosure provides a TFT, an array substrate and a fabricating method thereof and a display device. The TFT includes a gate, an active layer, a...
US-1,000,8612 Thin film transistor, array substrate and display device having the same, and method of manufacturing thereof
The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and...
US-1,000,8611 Thin film transistor and organic EL display device
A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and...
US-1,000,8610 Display apparatus and method of manufacturing the same
A display apparatus includes a substrate, an emission layer on the substrate; a planarization layer between the substrate and the emission layer; and a...
US-1,000,8609 Semiconductor device, method for manufacturing the same, or display device including the same
To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor...
US-1,000,8608 Liquid crystal display device
To provide a liquid crystal display device suitable for a thin film transistor which uses an oxide semiconductor. In a liquid crystal display device which...
US-1,000,8607 Thin-film transistor
According to one embodiment, a thin-film transistor includes a polycrystalline semiconductor layer, a gate electrode opposing the polycrystalline semiconductor...
US-1,000,8606 Thin film transistor and display panel
The thin film transistor includes a gate electrode formed on a surface of a substrate; a first amorphous silicon layer formed on an upper side of the gate...
US-1,000,8605 Connecting structure and method for manufacturing the same, and semiconductor device
A connecting structure includes: a Si substrate; a nanocarbon material formed above the Si substrate; and an electrode electrically connected to the nanocarbon...
US-1,000,8604 Active device and method for manufacturing active device
[Object] The present invention provides an active device in which the misalignment of a partition relative to electrodes is reduced and a method for...
US-1,000,8603 Multi-gate device and method of fabrication thereof
A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a...
US-1,000,8602 Semiconductor devices and methods for manufacturing the same
A semiconductor device and a method of manufacturing the same are provided, wherein an example method may include: forming a first semiconductor layer and a...
US-1,000,8601 Self-aligned gate cut with polysilicon liner oxidation
A method of forming a semiconductor device that includes forming a gate structure over a plurality of fin structures, wherein the gate structure provides a...
US-1,000,8600 Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active...
US-1,000,8599 Complementary metal oxide semiconductor device and method of forming the same
A complementary metal oxide semiconductor (CMOS) device is disclosed. The CMOS device includes a substrate with a first device region and a second device region...
US-1,000,8598 Top drain LDMOS
In an embodiment, this invention discloses a top-drain lateral diffusion metal oxide field effect semiconductor (TD-LDMOS) device supported on a semiconductor...
US-1,000,8597 Semiconductor devices with asymmetric halo implantation and method of manufacture
A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further...
US-1,000,8596 Channel-last replacement metal-gate vertical field effect transistor
A method of making a vertical transistor includes forming a doped source on a substrate; depositing a sacrificial gate material on the source; forming a trench...
US-1,000,8595 Method for producing semiconductor device and semiconductor device
A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first...
US-1,000,8594 High voltage semiconductor device
A high voltage semiconductor device includes a gate electrode structure disposed on a substrate, a source region disposed in the substrate to be adjacent to one...
US-1,000,8593 Radio frequency semiconductor device
A semiconductor device includes a well region of a first conductivity type, having a first depth, formed in a substrate. A source contact region of a second...
US-1,000,8592 Semiconductor device
Each first p.sup.+-type region is provided between adjacent trenches embedded with a MOS gate and is in contact with a p-type base region. Second p.sup.+-type...
US-1,000,8591 Semiconductor device, fabrication method for semiconductor device, power supply apparatus and high-frequency...
A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed from a p-type nitride semiconductor in which Mg...
US-1,000,8590 Semiconductor device with trench edge termination
A semiconductor device is provide that includes: a semiconductor body having a first surface, an inner region, and an edge region; a pn junction between a first...
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