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Patent # Description
US-1,000,8537 Complementary magnetic tunnel junction (MTJ) bit cell with shared bit line
A complementary bit cell includes a first magnetic tunnel junction (MTJ) device having a free layer coupled to a first access transistor and having a pinned...
US-1,000,8536 Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material
Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures...
US-1,000,8535 Image sensor having first fixed charge film for anti-reflection and second fixed charge film for moisture...
An image sensor includes a substrate including a plurality of photoelectric conversion parts and a pixel isolation trench extending from a surface of the...
US-1,000,8534 Microelectronic package with horizontal and vertical interconnections
In a microelectronic package, a first wire bond wire is coupled to an upper surface of a substrate. A first bond mass is coupled to another end of the first...
US-1,000,8533 Semiconductor package
A semiconductor package device includes a first semiconductor package including a first package substrate and a semiconductor chip stacked on the first package...
US-1,000,8532 Implant isolated devices and method for forming the same
A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor...
US-1,000,8531 Varied STI liners for isolation structures in image sensing devices
An integrated circuit device incorporating a plurality of isolation trench structures configured for disparate applications and a method of forming the...
US-1,000,8530 Image sensing device and manufacturing method thereof
Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The BSI image sensor includes a semiconductive substrate, a deep...
US-1,000,8529 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection...
US-1,000,8528 Solid-state image sensor, method of manufacturing the same, and camera
A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged...
US-1,000,8527 Image sensor and electronic device including the same
An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the...
US-1,000,8526 Image sensor and method for fabricating the same
An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor...
US-1,000,8525 Imaging element and imaging apparatus
An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the...
US-1,000,8524 Solid-state image pickup unit and electronic apparatus
A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion...
US-1,000,8523 Semiconductor device, method of manufacturing semiconductor device, and solid-state imaging apparatus
A semiconductor device includes a gate electrode formed on a substrate with a gate insulating layer in between, an insulating layer of property and thickness...
US-1,000,8522 Multi-spectrum photosensitive device and manufacturing method thereof
The present disclosure relates to a multi-spectrum photosensitive device and manufacturing method thereof. The multi-spectrum photosensitive device comprises at...
US-1,000,8521 Solid-state imaging device
A backside illumination-type solid-state imaging device is provided in which an amount of accumulated charge of a photodiode is increased and a read out path of...
US-1,000,8520 Semiconductor device with terminals and manufacturing method of semiconductor device with terminals
A semiconductor device in an embodiment according to the present invention includes a first terminal and a second terminal stacked with a first conductive layer...
US-1,000,8519 Display device and electronic device including the same
It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of...
US-1,000,8518 Thin film transistor array panel, liquid crystal display and manufacturing method thereof
A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed...
US-1,000,8517 Display device having reduced parasitic capacitance and cross-talk and method of manufacturing the same
A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a plurality of pixels, wherein each pixel...
US-1,000,8516 LTPS TFT array substrate, its manufacturing method, and display device
The present disclosure relates to the field of TFT manufacturing process, and provides an LTPS TFT array substrate, its manufacturing method and a display...
US-1,000,8515 Semiconductor device
An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including...
US-1,000,8513 Semiconductor device
A semiconductor device includes a first and a second conductive films over an insulating surface; a first insulating film over the insulating surface and the...
US-1,000,8512 Semiconductor device and method of manufacturing the same
A semiconductor device may include pipe channel layer, and a pipe gate surrounding the pipe channel layer. The semiconductor device may include an oxidization...
US-1,000,8511 Dense arrays and charge storage devices
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface...
US-1,000,8510 Semiconductor memory device
According to an embodiment, a semiconductor memory device comprises control gate electrodes and a semiconductor layer. The control gate electrodes are stacked...
US-1,000,8509 Non-volatile semiconductor memory device
Stack structures are arranged in a first direction horizontal to a semiconductor substrate, one of which has a longitudinal direction along a second direction....
US-1,000,8508 One time programmable (OTP) cell having improved programming reliability
A non-volatile semiconductor storage device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating...
US-1,000,8507 Metal FinFET anti-fuse
Semiconductor structures containing FinFET anti-fuses with reduced breakdown voltage are provided which can be readily integrated with high performance FinFETs....
US-1,000,8506 Semiconductor arrangement with capacitor
A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory...
US-1,000,8505 Semiconductor device including capacitor and method of manufacturing the same
A method for manufacturing a semiconductor device may include forming contact pads spaced apart from each other in a first direction on a substrate and between...
US-1,000,8504 Memory arrays
Some embodiments include a memory array having rows of fins. Each fin has at least one channel region. Each channel region extends from a first source/drain...
US-1,000,8503 Memory devices which include memory arrays
Some embodiments include a memory device. The device has a fin with a first source/drain region, a second source/drain region and a channel region. The first...
US-1,000,8502 Memory device
A memory device which stores a large amount of data is provided. The memory device includes a first transistor, a second transistor, a third transistor, a first...
US-1,000,8501 Sandwich EPI channel for device enhancement
The present disclosure relates to a transistor device having a channel region comprising a sandwich film stack with a plurality of different layers that improve...
US-1,000,8500 Semiconductor devices
The present disclosure relates to semiconductor structures and, more particularly, to segmented or cut finFET structures and methods of manufacture. The...
US-1,000,8499 Method to form silicide and contact at embedded epitaxial facet
An integrated circuit with an MOS transistor abutting field oxide and a gate structure on the field oxide adjacent to the MOS transistor and a gap between an...
US-1,000,8498 Semiconductor integrated circuit and logic circuit
Disclosed herein is a driver circuit including first and second n-channel transistors connected together in series between first and second nodes. The first...
US-1,000,8497 Method of manufacturing a semiconductor device and a semiconductor device
In a method of forming a FinFET, a first sacrificial layer is formed over a source/drain structure of a FinFET structure and an isolation insulating layer. The...
US-1,000,8496 Method for forming semiconductor device having continuous fin diffusion break
Aspects of the present disclosure includes a semiconductor structure and a method of forming. A plurality of fins on a semiconductor substrate and a plurality...
US-1,000,8495 Method for forming FinFET device
A method includes providing a semiconductor structure including an active region having a first doped region, a first contact member on the first doped region,...
US-1,000,8494 Semiconductor component and method for fabricating the same
A semiconductor component, which includes a substrate, an interfacial layer disposed on the substrate, a first metal gate structure and a second metal gate...
US-1,000,8493 Semiconductor device and method of fabricating the same
A semiconductor device includes a first fin-shaped pattern and a second fin-shaped pattern arranged in a row in a direction, a trench between the first...
US-1,000,8492 Electrostatic discharge (ESD) protection device and method fabricating the ESD protection device
An electrostatic discharge (ESD) device includes a gate structure, disposed on a substrate. A drain doped region of a first conductive type is in the substrate,...
US-1,000,8491 Low capacitance electrostatic discharge (ESD) devices
The present disclosure relates to semiconductor structures and, more particularly, to low capacitance electrostatic discharge (ESD) devices and methods of...
US-1,000,8489 Electrostatic discharge protection semiconductor device
An electrostatic discharge protection semiconductor device includes a substrate, a gate set positioned on the substrate, a source region and a drain region...
US-1,000,8488 Semiconductor module adapted to be inserted into connector of external device
In one embodiment, the semiconductor module includes a module substrate and a first substrate mounted on and electrically connected to a first surface of the...
US-1,000,8487 Optoelectroic semiconductor chip and method of producing an optoelectronic semiconductor chip
An optoelectronic semiconductor chip includes a semiconductor layer sequence with an upper face and a lower face opposite the upper face, wherein the...
US-1,000,8486 Disc-shaped thyristor for a plurality of plated-through semiconductor components
A disk cell for pressure contacting a plurality of semiconductor components via a clamping device to generate a clamping force. The disk cell includes a housing...
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