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Patent # Description
US-1,003,2938 Semiconductor devices and methods for manufacturing the same
A semiconductor device includes a first gallium nitride layer disposed on a semiconductor substrate, wherein the first gallium nitride layer has a first...
US-1,003,2937 Monolithic series switching semiconductor device having low-resistance substrate contact structure and method
A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact...
US-1,003,2936 Method for manufacturing resistive element, method for manufacturing pressure sensor element, pressure sensor...
A method for manufacturing a resistive element includes: preparing a substrate including an n-type silicon layer; doping the silicon layer with an impurity to...
US-1,003,2935 Semiconductor memory device with charge-diffusion-less transistors
A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers...
US-1,003,2934 Semiconductor device and method for manufacturing the same
To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device...
US-1,003,2933 Method of manufacturing thin film transistor with multiple silicon active layers
Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in...
US-1,003,2932 Oxide thin-film transistor and method of fabricating the same
Disclosed are an oxide thin-film transistor and a method of fabricating the same. The oxide thin-film transistor according to an embodiment of the present...
US-1,003,2931 Switching element
A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer...
US-1,003,2930 Amorphous oxide and thin film transistor
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an...
US-1,003,2929 Semiconductor device and display device including the semiconductor device
The reliability of a transistor including an oxide semiconductor is improved. The transistor in a semiconductor device includes a first oxide semiconductor film...
US-1,003,2928 Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One...
US-1,003,2927 Oxide sputtering target, and thin film transistor using the same
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
US-1,003,2926 Semiconductor device including an oxide semiconductor
A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate...
US-1,003,2925 Imaging element, electronic appliance, method for driving imaging device, and method for driving electronic...
An imaging element which is capable of obtaining a piece of image data by performing light exposure plural times is provided. In addition, an imaging element...
US-1,003,2924 Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of...
An apparatus is provided that includes a substrate and source and drain regions within an annealed active layer having resulted from an annealing of an active...
US-1,003,2923 Metal oxide thin film, method for manufacturing the same, and solution for metal oxide thin film
The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent...
US-1,003,2922 Thin-film transistor with crystallized active layer, method of manufacturing the same, and organic...
A thin-film transistor, including a substrate; an active layer on the substrate; a gate electrode on the active layer; and a gate insulating layer between the...
US-1,003,2921 Semiconductor device, display module, and electronic device
A semiconductor device with a novel structure is provided. A semiconductor device with reduced power consumption is provided. A circuit which is configured to...
US-1,003,2920 Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods...
The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first...
US-1,003,2919 Method for manufacturing semiconductor device
The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is...
US-1,003,2918 Semiconductor device and method for manufacturing the same
A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first...
US-1,003,2917 Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof
The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a first semiconductor region,...
US-1,003,2916 Formation method of semiconductor device structure with gate stack
A method for forming a semiconductor device structure is provided. The method includes forming a dummy gate stack over a semiconductor substrate and forming...
US-1,003,2915 Non-planar transistors and methods of fabrication thereof
The present description relates to the formation source/drain structures within non-planar transistors, wherein fin spacers are removed from the non-planar...
US-1,003,2914 Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, an insulating structure, and a gate stack. The substrate has at least one semiconductor fin. The insulating...
US-1,003,2913 Contact structures, FinFET devices and methods of forming the same
Contact structures, FinFET devices and methods of forming the same are disclosed. One of the contact structures includes a source/drain region, a mask layer, a...
US-1,003,2912 Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions...
A modified silicon substrate having a substantially defect-free strain relaxed buffer layer of SiGe is suitable for use as a foundation on which to construct a...
US-1,003,2911 Wide band gap transistor on non-native semiconductor substrate
Techniques are disclosed for forming a GaN transistor on a semiconductor substrate. An insulating layer forms on top of a semiconductor substrate. A trench,...
US-1,003,2910 FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same
Fin field-effect transistor (FinFET) devices and methods of forming the same are provided herein. In an embodiment, a FinFET device includes a semiconductor...
US-1,003,2909 Vertical transistor having uniform bottom spacers
A method of forming a spacer for a vertical transistor is provided. The method includes forming a fin structure that includes a fin on a semiconductor...
US-1,003,2908 Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers,...
A matrix rail structure is formed over a substrate. The matrix rail structure includes a pair of lengthwise sidewalls that extend along a first horizontal...
US-1,003,2907 TrenchMOS
A device is disclosed. The device comprises a substrate having an epitaxial layer of a first conductivity type, a deep trench of a first depth, a pillar region...
US-1,003,2906 Vertical field effect transistor and method of fabricating the same
The present invention concept relates to vertical field effect transistor and method of fabricating the same. A method of fabricating a vertical field effect...
US-1,003,2905 Integrated circuits with high voltage transistors and methods for producing the same
Integrated circuits and methods of producing integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a substrate and a gate...
US-1,003,2904 Semiconductor device with non-isolated power transistor with integrated diode protection
A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and...
US-1,003,2903 Threshold voltage adjustment of a transistor
A threshold voltage adjusted long-channel transistor fabricated according to short-channel transistor processes is described. The threshold-adjusted transistor...
US-1,003,2902 LDMOS with improved breakdown voltage and with non-uniformed gate dielectric and gate electrode
An LDMOS is formed with a second gate stack over n.sup.- drift region, having a common gate electrode with the gate stack, and having a higher work function...
US-1,003,2901 Semiconductor device with trench-like feed-throughs
A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through...
US-1,003,2900 Vertical DMOS transistor
A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially...
US-1,003,2899 Semiconductor device and method therefor including multiple cap layers with amorphous layer
A semiconductor crystal substrate includes a substrate, a first semiconductor layer including a nitride semiconductor and formed over the substrate, a second...
US-1,003,2898 Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility
A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure...
US-1,003,2897 Single electron transistor with self-aligned Coulomb blockade
Semiconductor devices and methods of making the same include forming a gate structure on a thin semiconductor layer. Additional semiconductor material is formed...
US-1,003,2896 Semiconductor device and manufacturing method thereof
The surface of an interlayer insulating film formed over an emitter coupling portion and the surface of an emitter electrode formed over the interlayer...
US-1,003,2895 Semiconductor device and method for manufacturing the same
A semiconductor device includes trench gate electrodes, an emitter coupling section that couples them with each other, an interlayer insulating film arranged in...
US-1,003,2894 Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
After a titanium nitride film is formed to cover an interlayer insulating film, a first nickel film is formed on a front surface of a silicon carbide base...
US-1,003,2893 Bipolar transistor
A bipolar transistor comprises a semiconductor body including a collector region and a base region arranged on top of the collector region. The base region has...
US-1,003,2892 Semiconductor device
This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is...
US-1,003,2891 FinFET based flash memory cell
A method of manufacturing a flash memory cell is provided including forming a plurality of semiconductor fins on a semiconductor substrate, forming floating...
US-1,003,2890 Method of manufacturing semiconductor devices
Disclosed is a method of manufacturing semiconductor devices. A gate trench and an insulation pattern defined by the gate trench are formed on a substrate and...
US-1,003,2889 Self-aligned passivation of active regions
A method includes forming a semiconductor fin, performing a first passivation step on a top surface of the semiconductor fin using a first passivation species,...
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