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Patent # Description
US-1,003,2888 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having...
To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is...
US-1,003,2887 Method of forming a contact
A method includes forming a first gate structure in a dielectric layer over a substrate, wherein the first gate structure includes a first gate stack and...
US-1,003,2886 Semiconductor device
A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with...
US-1,003,2885 Channel replacement and bimodal doping scheme for bulk finFet threshold voltage modulation with reduced...
A method includes removing a top portion of a substrate after implantation of a punch through stopper into the substrate; epitaxially growing undoped material...
US-1,003,2884 Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
Semiconductor devices and methods for making the same includes conformally forming a first spacer on a plurality of fins. A second spacer is conformally formed...
US-1,003,2883 Silicon germanium heterojunction bipolar transistor structure and method
Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially...
US-1,003,2881 Mask, manufacturing method thereof and exposure system
A mask, including a transparent substrate and mask patterns formed on a surface of the transparent substrate, wherein the mask patterns include a first area for...
US-1,003,2880 Method for forming ohmic contacts
Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the...
US-1,003,2879 Thin film transistor substrate, display apparatus including the same, method of manufacturing the same, and...
A thin film transistor (TFT) substrate includes an insulating layer, an electrode on the insulating layer, and a main buffering layer connecting a side surface...
US-1,003,2878 Semiconductor device with a semiconductor via and laterally connected electrode
A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench...
US-1,003,2877 FinFET and method of forming same
A FinFET device and a method of forming the same are provided. A method includes forming a patterned mask stack over a substrate, features of the patterned mask...
US-1,003,2876 Contact silicide having a non-angular profile
A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is...
US-1,003,2875 Semiconductor device and method for manufacturing the semiconductor device
A semiconductor device includes a substrate, a first semiconductor layer formed over the substrate, a second semiconductor layer formed over the first...
US-1,003,2874 Semiconductor device with reduced on-state resistance
A semiconductor device includes first and second electrodes spaced apart along a first direction, a first semiconductor region of a first conductivity type...
US-1,003,2873 Semiconductor device and method of forming the same
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the...
US-1,003,2872 Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to...
US-1,003,2871 Silicon carbide semiconductor device and method for manufacturing same
A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation...
US-1,003,2870 Low defect III-V semiconductor template on porous silicon
A method of forming a semiconductor on a porous semiconductor structure. The method may include forming a stack, the stack includes (from bottom to top) a...
US-1,003,2869 Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same
A semiconductor apparatus including a substrate having a substrate major surface, a dielectric material on the substrate major surface and having a second major...
US-1,003,2868 High performance super-beta NPN (SBNPN)
A method for making a super .beta. NPN (SBNPN) transistor includes depositing a tetraethyl orthosilicate (TEOS) layer on a P type epitaxial layer; depositing a...
US-1,003,2867 Forming bottom isolation layer for nanosheet technology
A method of forming a semiconductor structure includes forming a multi-layer structure. The multi-layer structure has a substrate and two or more nanosheet...
US-1,003,2866 Semiconductor device and method of manufacturing semiconductor device
In an active region, a contact trench in which a source electrode is embedded is provided. In a boundary region between the active region and the edge...
US-1,003,2865 Powers semiconductor device
A power semiconductor device is provided. The power semiconductor device includes a substrate having a device region and a surrounding termination region; and...
US-1,003,2864 Semiconductor device having field insulation layer between two fins
Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first...
US-1,003,2862 Semiconductor structure with integrated passive structures
A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method...
US-1,003,2861 Semiconductor device with field threshold MOSFET for high voltage termination
This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and...
US-1,003,2860 Semiconductor device and fabrication method thereof
A semiconductor device and a fabrication method are provided. The semiconductor device is fabricated by providing a substrate with a device area surrounded by a...
US-1,003,2859 Methods for manufacturing integrated circuit devices having features with reduced edge curvature
A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution...
US-1,003,2858 Nanosheet capacitor
A capacitive device includes a first electrode comprising a nanosheet stack and a second electrode comprising a nanosheet stack, the second electrode arranged...
US-1,003,2857 Etchstop layers and capacitors
Capacitor structures for integrated circuit devices are provided. Capacitors include proximate dense or highly dense etchstop layers. The dense or highly dense...
US-1,003,2856 Nanosheet capacitor
A capacitive device includes a first electrode comprising a nanosheet stack, and a second electrode comprising a nanosheet stack, the second electrode arranged...
US-1,003,2855 Advanced metal insulator metal capacitor
A pattern is defined in a dielectric layer. The dielectric layer includes a low-k dielectric region and a high-k dielectric region. The high-k dielectric region...
US-1,003,2854 Semiconductor integrated circuit device with a capacitor having high capacitance
A semiconductor integrated circuit device may include a cell capacitor connected with any one of a first electrode and a second electrode of an access device....
US-1,003,2853 Microstructural architecture to enable strain relieved non-linear complex oxide thin films
An integrated non-linear complex oxide thin film heterostructure with a tailored microstructure architecture design and a method of fabrication thereof,...
US-1,003,2852 Single poly nonvolatile memory cells
A single-poly nonvolatile memory cell includes a coupling capacitor, a cell transistor and a selection transistor. The cell transistor has a floating gate, a...
US-1,003,2851 Formation of high-resolution patterns inside deep cavities and applications to RF Si-embedded inductors
A method for fabricating high-resolution features in a deep recess includes etching a cavity in a substrate, fabricating at least one focusing pattern on a...
US-1,003,2850 Semiconductor die with back-side integrated inductive component
An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the...
US-1,003,2849 Organic light emitting diode display device and manufacturing method thereof
An organic light emitting diode display includes a substrate, a semiconductor, a gate electrode, a source electrode connected to a first portion of the...
US-1,003,2848 Display device
A display device includes a first substrate arranged with a plurality of pixels on a first surface, the plurality of pixels having a display element including a...
US-1,003,2847 Display device and method of manufacturing the same
A display device includes a substrate including a bending area, a display area. A plurality of first wires is disposed above the substrate. A second wire is...
US-1,003,2846 Display device
A display device according to an exemplary embodiment of the present invention includes: a scan line extending in a first direction; a data line crossing the...
US-1,003,2845 Display apparatus
A display apparatus including a first conductive layer; a first insulating layer including a first opening exposing a first upper surface of the first...
US-1,003,2844 Organic light emitting display device and method of manufacturing the same
An organic light emitting display device and a method of manufacturing the same are provided that may reduce the resistance of a second electrode and may...
US-1,003,2843 Organic light emitting display device and method of manufacturing the same
Discussed is an organic light emitting display device in which an auxiliary electrode is disposed on an overcoating layer, and thus, an aperture ratio is...
US-1,003,2842 Slim-bezel flexible display device and manufacturing method thereof
A slim-bezel flexible display device and a manufacturing method thereof are disclosed. A through hole is formed in a first base plate of a lower substrate in an...
US-1,003,2841 Silicon and semiconducting oxide thin-film transistor displays
An electronic device display may have an array of pixel circuits. Each pixel circuit may include an organic light-emitting diode and a drive transistor. Each...
US-1,003,2840 Light-emitting device
There is provided a semiconductor device including a first pixel and a second pixel each including a transistor and an EL element including a pixel electrode...
US-1,003,2839 Display device
A display device is disclosed. In one aspect, the display device includes a display area including a plurality of pixel circuits arranged in a first direction...
US-1,003,2838 AMOLED pixel driving circuit and pixel driving method
The present invention provides an AMOLED pixel driving circuit and a pixel driving method. By utilizing the dual gate thin film transistor to be the drive thin...
US-1,003,2837 Organic electroluminescent display device with enhanced extraction efficiency
An organic electroluminescent display device for improving light extraction efficiency is provided. A bank has an opening part at a position of a light-emitting...
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