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Patent # Description
US-1,003,2804 Electro-optic apparatus and electronic device
An electro-optic apparatus includes an element substrate, a pixel region including a first and second pixel formed on the element substrate, a first terminal...
US-1,003,2803 Thin film transistor array panel and method for manufacturing the same
A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode....
US-1,003,2802 Thin-film transistor device and display device using same
A display device including: a lead wiring layer pattern 207, made from metal, that extends outside a light emission region on a substrate; a passivation layer...
US-1,003,2801 Display apparatus
A load related to a scanning line is decreased and a load related to a common electrode is decreased without decrease in an aperture ratio of each pixel. A...
US-1,003,2800 Array substrate and display device
The invention provides an array substrate and a display device. The array substrate comprises a plurality of gate lines and a plurality of data lines which are...
US-1,003,2799 Semiconductor device, display device, and method for manufacturing the same
Provided is a semiconductor device including: a first transistor over a substrate, the first transistor having a gate electrode, an oxide semiconductor film,...
US-1,003,2798 Semiconductor device, light-emitting device, and electronic device
An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect...
US-1,003,2797 Oxide semiconductor-based transistor and method of manufacturing the same
Disclosed are an oxide semiconductor-based transistor and a method of manufacturing the same. The oxide semiconductor-based transistor includes: a substrate...
US-1,003,2796 Display device
A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a...
US-1,003,2795 Hard coating film and display device using the same
Disclosed is a display device that includes a display element including a plurality of thin film transistors; and a hard coating film on the display element,...
US-1,003,2794 Bridging local semiconductor interconnects
A semiconductor device includes a plurality of gates formed upon a semiconductor substrate that includes a plurality of outer active areas (e.g. CMOS/PMOS...
US-1,003,2793 Asymmetric junction engineering for narrow band gap MOSFET
A method for forming a semiconductor device. It includes forming fin structures on a substrate, where the fin structure defines source and drain regions. It...
US-1,003,2792 Semiconductor device and manufacturing method thereof
Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to...
US-1,003,2791 Three-dimensional semiconductor memory device
A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including...
US-1,003,2790 Semiconductor device
According to one embodiment, a semiconductor device includes a substrate; a stacked body; a columnar portion; and a plate portion. The stacked body includes a...
US-1,003,2789 Three-dimensional semiconductor memory device
Provided is a three-dimensional semiconductor memory device including a peripheral logic structure on a semiconductor substrate to include peripheral logic...
US-1,003,2788 Semiconductor memory device
A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided...
US-1,003,2787 Three-dimensional semiconductor memory device
A three-dimensional semiconductor memory device includes stacked structures, vertical semiconductor patterns, common source regions, and well pickup regions....
US-1,003,2786 Semiconductor device and manufacturing method thereof
In a method of manufacturing a semiconductor device including a non-volatile memory formed in a memory cell area and a logic circuit formed in a peripheral...
US-1,003,2785 Semiconductor device and method of manufacturing semiconductor device
A pair of floating gates disposed to be spaced apart from each other by a first distance and a pair of spacer insulating films disposed on each of the pair of...
US-1,003,2784 One-time programmable bitcell with native anti-fuse
An OTP memory device includes a first and a second doped region of the same polarity in a semiconductor substrate. The second doped region has a higher doping...
US-1,003,2783 Integrated circuits having an anti-fuse device and methods of forming the same
Integrated circuits and methods of forming the same are provided. An exemplary integrated circuit includes a semiconductor substrate and an anti-fuse device...
US-1,003,2782 Static random access memory and manufacturing method thereof
A static random access memory (SRAM) cell includes first through fourth transistors being first type transistors and fifth and sixth transistors being second...
US-1,003,2781 Static random access memory device with halo regions having different impurity concentrations
In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region...
US-1,003,2780 Semiconductor device including dummy metal
A semiconductor device may include a plurality of dummy wirings formed on a substrate at different vertical levels and electrically floated and a plurality of...
US-1,003,2779 Semiconductor device with plasma damage protecting elements
An increase in chip area and a deterioration of delay performance are reduced without dummy cells or dummy gates for plasma damage, suppressing an increase in...
US-1,003,2778 Semiconductor device
A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate and are repeatedly arranged in a first direction and in a...
US-1,003,2777 Array of dynamic random access memory cells
An array of dynamic random access memory cells includes a first set of memory cell pairs in a first row, a second set of memory cells in a second row, and a...
US-1,003,2776 Method of maintaining the state of semiconductor memory having electrically floating body transistor
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to...
US-1,003,2775 Switching device for switching radio frequency signals
The invention relates to a switching device for switching radio frequency signals. The switching devices comprises at least a first field effect transistor that...
US-1,003,2774 Semiconductor device and manufacture method thereof
A semiconductor device includes a semiconductor substrate and at least one gate stack. The gate stack is present on the semiconductor substrate, and the gate...
US-1,003,2773 FinFET with reduced capacitance
A structure including a plurality of fins etched from a semiconductor substrate, a gate electrode above and perpendicular to the plurality of fins, a pair of...
US-1,003,2772 Integrated circuits with high voltage devices and methods for producing the same
Methods of fabricating integrated circuits and integrated circuits fabricated by those methods are provided. In an exemplary embodiment, a method includes...
US-1,003,2771 Integrated circuits with capacitors and methods for producing the same
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a first capacitor with a first...
US-1,003,2770 Semiconductor device structure and method
A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second...
US-1,003,2769 Cmos compatible fuse or resistor using self-aligned contacts
A semiconductor device includes dummy gate structures formed on a dielectric layer over a substrate and forming a gap therebetween. A trench silicide structure...
US-1,003,2768 Semiconductor device
A semiconductor device includes an antenna functioning as a coil, a capacitor electrically connected to the antenna in parallel, a passive element forming a...
US-1,003,2767 Field-effect semiconductor device
According to an embodiment of a semiconductor device, the semiconductor device includes a semiconductor body having a main surface, the semiconductor body...
US-1,003,2766 VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits...
VDMOS transistors, Bipolar-CMOS-DMOS (BCD) devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices are provided....
US-1,003,2765 Integrated circuits with electrostatic discharge protection and methods for producing the same
Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a deep well with...
US-1,003,2764 FinFET with ESD protection
In some embodiments, a field effect transistor structure includes a substrate, a fin structure and a gate structure. The fin structure is formed over the...
US-1,003,2763 Bulk cross-coupled high density power supply decoupling capacitor
In an aspect of the disclosure, a MOS device for using bulk cross-coupled thin-oxide decoupling capacitor is provided. The MOS device may include a pMOS...
US-1,003,2762 Semiconductor device
A semiconductor device includes a first diode having a cathode connected to a first terminal, a second diode having a cathode connected to a second terminal and...
US-1,003,2761 Electronic devices with tunable electrostatic discharge protection and methods for producing the same
Electronic devices and methods of producing such electronic devices are provided. In an exemplary embodiment, a method of producing an electronic device...
US-1,003,2760 Semiconductor device
A semiconductor device includes an annular-shaped first frame comprised of a ceramic and forming an inner cavity in which semiconductor elements are disposed. A...
US-1,003,2759 High-density semiconductor device
A method of manufacturing a semiconductor device includes providing a material above a substrate and respectively forming separate gate electrode lines on...
US-1,003,2758 Method of manufacturing semiconductor device
According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a...
US-1,003,2757 Projection display system
A light-emitting diode (LED) projector includes an LED display panel and a projection lens arranged in front of LED display panel and configured to collect and...
US-1,003,2756 Semiconductor package assembly with facing active surfaces of first and second semiconductor die and method for...
A semiconductor package assembly is provided. The semiconductor package assembly includes a first semiconductor package. The first semiconductor package...
US-1,003,2755 Power semiconductor arrangement having a plurality of power semiconductor switching elements and reduced...
A multiplicity of power semiconductor switching elements of the same type parallel have a load current terminal for a load current input and a load current...
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