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Patent # Description
US-1,003,8059 Semiconductor device
An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a coupling transistor made of a p-channel MOSFET and...
US-1,003,8058 FinFET device structure and method for forming same
A low electrical and thermal resistance FinFET device includes a semiconductor body, a fin body on the substrate wafer, an isolation structure forming a fin...
US-1,003,8057 Junction interlayer dielectric for reducing leakage current in semiconductor devices
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. A dielectric interlayer is formed on the...
US-1,003,8056 Method for fabricating of cell pitch reduced semiconductor device and semiconductor device
A method for fabricating a semiconductor device is disclosed. A plurality of trenches is formed at a predetermined cell pitch in an upper surface portion of a...
US-1,003,8055 Substrate structure with embedded layer for post-processing silicon handle elimination
The present disclosure relates to a substrate structure with a buried dielectric layer for post-processing silicon handle elimination. The substrate structure...
US-1,003,8054 Variable gate width for gate all-around transistors
Nanowire-based gate all-around transistor devices having one or more active nanowires and one or more inactive nanowires are described herein. Methods to...
US-1,003,8053 Methods for removal of selected nanowires in stacked gate all around architecture
A method forms first and second sets of fins. The first set includes a first stack of layer pairs where each layer pair contains a layer of Si having a first...
US-1,003,8052 Semiconductor device with channelstopper and method for producing the same
A vertical semiconductor device comprises a substrate having a front surface and a back surface, an active area (AA) located in the substrate, having a drift...
US-1,003,8051 Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage
A semiconductor die includes a substrate and a semiconductor body supported by the substrate and having a periphery which is devoid of active devices and...
US-1,003,8050 FinFET resistor and method to fabricate same
A method includes providing a semiconductor substrate having a plurality of linear semiconductor fin structures spaced apart from one another on a surface of...
US-1,003,8049 Display device
A display device, includes a substrate; first to fourth subpixels sequentially arranged on the substrate; a first power line on a left side of the first...
US-1,003,8048 Display apparatus
A display apparatus and a method of manufacturing a display apparatus, the apparatus including a plurality of pixels on a substrate, wherein a first pixel of...
US-1,003,8047 Light emitting diode packaging structure and packaging method
The present application discloses a light emitting diode packaging structure comprising a base substrate; a metal lead on the base substrate; a cover plate; and...
US-1,003,8046 Organic light emitting diode display
An organic light emitting diode display is disclosed that includes at least a shield layer on a substrate; a semiconductor layer on the shield layer; a gate...
US-1,003,8044 Display device having a driving chip
A display device includes: a display substrate having an active area, which includes a pixel array, and a peripheral area around the active area; a driving chip...
US-1,003,8043 Method for manufacturing AMOLED backplane and structure thereof
The present invention provides method for manufacturing an AMOLED backplane and a structure thereof. The method uses a drain terminal of a drive TFT to serve as...
US-1,003,8042 OLED color display device
The present invention provides an OLED color display device, comprising a substrate (1), an anode (11), a thin film transistor array (21), a Hole Injection...
US-1,003,8041 Display device and method of manufacturing the same
A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a flexible substrate, a thin film transistor...
US-1,003,8040 Display device, electronic apparatus, and method of fabricating the display device
It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high...
US-1,003,8039 Organic light emitting diode display device and method of fabricating the same
An organic light emitting diode display device includes a substrate including a display region, wherein a plurality of pixel regions are defined in the display...
US-1,003,8038 Display device
A display device is disclosed. In one aspect, the display device includes a substrate including a display area and a peripheral area adjacent to the display...
US-1,003,8037 Organic light-emitting display device and method of manufacturing the same
An organic light-emitting display device includes a substrate including first and second pixel regions, pixel electrodes respectively corresponding thereto, a...
US-1,003,8036 Organic light-emitting diode panel and manufacturing method using the same
An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel....
US-1,003,8035 Organic light-emitting display panel and forming method thereof
The present disclosure provides an organic light-emitting display panel. The organic display panel comprises a substrate, an organic light-emitting structure...
US-1,003,8034 Organic light-emitting device and display apparatus
A plurality of light emitters emitting different colors of light in an organic light-emitting device, each light emitter including a first electrode, a first...
US-1,003,8033 Image sensor
An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent...
US-1,003,8032 Semiconductor memory device, semiconductor device, and method for manufacturing the same
According to one embodiment, a semiconductor memory device includes a plurality of first wirings, second wirings, a plurality of memory cells, selection gate...
US-1,003,8031 Micro light emitting diode structure, pixel unit, and light emitting diode display panel
A micro light emitting diode structure includes a light emitting stacking layer, an insulating layer, a first electrode and a second electrode. The light...
US-1,003,8030 Light-emitting diode
A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path...
US-1,003,8029 Light-emitting device
A light-emitting device includes a growth substrate, a plurality of light-emitting diode units formed on the growth substrate and arranged in a closed loop, an...
US-1,003,8028 Image sensor including depletion inducing layer
An image sensor may include a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes: a...
US-1,003,8027 CMOS image sensor and fabrication method thereof
The present disclosure provides CMOS image sensors and fabrication methods thereof. An exemplary fabrication process of a CMOS image sensor includes providing a...
US-1,003,8026 Bond pad structure for bonding improvement
Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3DIC includes a first substrate including a photodetector which is configured...
US-1,003,8025 Via support structure under pad areas for BSI bondability improvement
Some embodiments of the present disclosure relate to an integrated chip having a via support structure underlying a bond pad. The integrated chip has an image...
US-1,003,8024 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion...
US-1,003,8023 Solid-state image sensor and method of manufacturing the same
A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having...
US-1,003,8022 Light detector
A light detector including an invisible light converting substrate, a light sensing element, a first protection layer, a thin film transistor, a first...
US-1,003,8021 Packaged image sensor having improved dicing properties
The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that...
US-1,003,8020 Solid-state image sensor
A solid-state image sensor includes: a pixel array that includes first pixels, each having first and second photoelectric conversion units, and second pixels,...
US-1,003,8019 Image sensor and manufacturing method thereof
An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical...
US-1,003,8018 Image sensor having phase difference sensing pixels arranged in irregular hexagonal shape
Provided is an image sensor. The image sensor includes a pixel array including a plurality of pixel blocks. Each of the plurality of pixel blocks includes a...
US-1,003,8017 Light absorption apparatus
A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light...
US-1,003,8016 Display device
According to one embodiment, a display device includes a pixel, a scanning line, a signal line, a pixel electrode, a first switching element, and a capacitance...
US-1,003,8015 Array substrate and fabrication method thereof, display panel
An array substrate, a display panel, and a fabrication method of the array substrate are provided. The array substrate comprises a first thin film transistor...
US-1,003,8014 Thin film transistor array
A thin film transistor array including a gate wiring connected to a gate electrode and extended in a first direction, a source wiring connected to a source...
US-1,003,8013 Flexible display device with side crack protection structure and manufacturing method for the same
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size...
US-1,003,8012 Semiconductor device and manufacturing method thereof, delamination method, and transferring method
A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a...
US-1,003,8011 Semiconductor device
A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are...
US-1,003,8010 Semiconductor device
A semiconductor device may include: a substrate; a first well region formed on the substrate; a second well region formed on the substrate, the first well...
US-1,003,8009 Three-dimensional semiconductor memory devices
Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic system adopting the same. The semiconductor device...
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