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Patent # Description
US-1,004,3941 Light emitting diode having improved quantum efficiency at low injection current
Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting...
US-1,004,3940 Integrated photodetector waveguide structure with alignment tolerance
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a...
US-1,004,3939 Top to bottom solution deposition of metal oxides
A technique is described depositing a new formula of indium and tin salt solutions as a precursor to form a solid transparent indium tin oxide (ITO) film on...
US-1,004,3938 Reducing dark current in germanium photodiodes by electrical over-stress
Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the...
US-1,004,3937 Systems and method for precision automated placement of backsheet on PV modules
A method for constructing a photovoltaic (PV) substrate. A moving frame can be lowered towards a stack of back sheets and a back sheet of the stack of back...
US-1,004,3936 Avalanche diode, and a process of manufacturing an avalanche diode
The present disclosure relates to an avalanche photodiode comprising a substrate having an active area. A first dopant implant in the active area forms one of...
US-1,004,3935 Interdigitated back contact heterojunction photovoltaic device
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure....
US-1,004,3934 Silicon-containing heterojunction photovoltaic element and device
A photovoltaic device is provided in which the tunneling barrier for hole collection at either the front contact or the back contact of a silicon heterojunction...
US-1,004,3933 Solar cell and method for manufacturing the same
A solar cell and a method for manufacturing the same are discussed. The solar cell can include a semiconductor layer containing first impurities and having a...
US-1,004,3932 Internally-heated thermal and externally-cool photovoltaic cascade solar energy system for full solar spectrum...
A single-stack, solar power receiver comprising both a thermal absorber layer and a photovoltaic cell layer. The stack includes an aerogel layer, that is...
US-1,004,3931 Solar cell module and solar cell module manufacturing method
A solar cell module includes a plurality of solar cells 1 connected to each other in a way that bus bar electrode 21 formed on surfaces of adjacent solar cells...
US-1,004,3930 High temperature acrylic sheet
The invention relates to an acrylic sheet having a high Tg, and especially for the use of the high Tg acrylic sheet as a front sheet of a photovoltaic module....
US-1,004,3929 Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
A method is provided for converting optical energy to electrical energy in a spectrally adaptive manner. The method begins by directing optical energy into a...
US-1,004,3927 Metal-contact-free photodetector
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has...
US-1,004,3926 Method for processing surface of light-transmitting glass and light transmitting glass processed by said method
To impart antiglare properties without reducing the amount of transmitted light, a method for processing a surface of light-transmitting-glass according to the...
US-1,004,3925 Guided-wave photodetector apparatus employing mid-bandgap states of semiconductor materials, and fabrication...
Guided-wave photodetectors based on absorption of infrared photons by mid-bandgap states in non-crystal semiconductors. In one example, a resonant guided-wave...
US-1,004,3924 Low cost optical sensor package
Optical sensor packages include a substrate assembly such as a leadframe or semiconductor substrate. One or more optical devices are mounted to the substrate...
US-1,004,3923 Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source...
Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation are...
US-1,004,3922 Back contact layer for photovoltaic cells
A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon...
US-1,004,3921 Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of...
A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2...
US-1,004,3920 Highly responsive III-V photodetectors using ZnO:Al as n-type emitter
A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate...
US-1,004,3919 Memory devices and methods of manufacture thereof
Representative methods of manufacturing memory devices include forming a transistor with a gate disposed over a workpiece, and forming an erase gate with a tip...
US-1,004,3918 Semiconductor device and manufacturing method thereof
Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device...
US-1,004,3917 Oxide semiconductor device and method of manufacturing the same
An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back...
US-1,004,3916 Thin-film transistor having channel structure with increased width-length ratio
Embodiments of the invention disclose a thin-film transistor having a channel structure that has an increased width-length ratio and a manufacturing method...
US-1,004,3915 Semiconductor device and method for manufacturing the same
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is...
US-1,004,3914 Semiconductor device comprising a plurality of oxide semiconductor layers
A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is...
US-1,004,3913 Semiconductor film, semiconductor device, display device, module, and electronic device
A semiconductor device with favorable electrical characteristics is provided. In an oxide semiconductor film, a plurality of electron diffraction patterns are...
US-1,004,3912 Array substrate and the manufacturing methods thereof
The present disclosure relates to an array substrate and the manufacturing method thereof. The array substrate includes a glass substrate. The shading metal...
US-1,004,3911 Thin film transistor, method for fabricating the same, array substrate and display device
A thin film transistor (TFT), a method for fabricating the same, an array substrate and a display device are provided. The TFT includes a source electrode and a...
US-1,004,3910 Semiconductor device and method of forming the same
A semiconductor device includes a semiconductor substrate, a plurality of gate spacers and a gate stack. The gate spacers are over the semiconductor substrate....
US-1,004,3909 Semiconductor devices having high-quality epitaxial layer and methods of manufacturing the same
A semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. The semiconductor device may include: a substrate; a...
US-1,004,3908 Contact structure of semiconductor device
The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a...
US-1,004,3907 Method of making a CMOS semiconductor device using a stressed silicon-on-insulator (SOI) wafer
A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer...
US-1,004,3906 Semiconductor device and manufacturing method thereof
A semiconductor device includes a Fin FET device. The Fin FET device includes a first fin structure extending in a first direction and protruding from an...
US-1,004,3905 Semiconductor device
According to one embodiment, a semiconductor device includes a first element isolating area, a first element area surrounding the first element isolating area,...
US-1,004,3904 Method and structure of improving contact resistance for passive and long channel devices
A semiconductor device includes a gate arranged on a substrate; a source/drain formed on the substrate adjacent to the gate; a source/drain contact extending...
US-1,004,3903 Semiconductor devices with source/drain stress liner
A semiconductor device includes a substrate including a first region and a second region, a first fin-type pattern in the first region, a second fin-type...
US-1,004,3902 Semiconductor devices with shaped portions of elevated source/drain regions
A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the...
US-1,004,3901 Ultra-high voltage devices
An ultra-high voltage device is provided. The ultra-high voltage device includes a substrate, a first well zone formed in the substrate, a second well zone...
US-1,004,3900 Vertical transport Fin field effect transistors on a substrate with varying effective gate lengths
A method of forming vertical transport fin field effect transistors, including, forming a bottom source/drain layer on a substrate, forming a channel layer on...
US-1,004,3899 Laterally diffused MOSFET for embedded memory applications
A Laterally Diffused MOSFET (LDMOS) device architecture particularly suitable for use in tight pitch environments such as for line drivers in an integrated...
US-1,004,3898 Enhancement-mode III-nitride devices
A III-N enhancement-mode transistor includes a III-N structure including a conductive channel, source and drain contacts, and a gate electrode between the...
US-1,004,3897 Semiconductor device and method of fabricating semiconductor device
A method of fabricating a semiconductor device may form a nitride semiconductor layer on a substrate, form a first insulator layer on the nitride semiconductor...
US-1,004,3896 III-Nitride transistor including a III-N depleting layer
A transistor includes a III-N layer structure including a III-N channel layer between a III-N barrier layer and a III-N depleting layer, where the III-N channel...
US-1,004,3895 Semiconductor device
A linear active cell region is formed from a plurality of divided active cell regions arranged apart from each other in a second direction (y direction). The...
US-1,004,3894 Transistor amplifier circuit and integrated circuit
Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second...
US-1,004,3893 Post gate silicon germanium channel condensation and method for producing the same
Methods of forming a graded SiGe percentage PFET channel in a FinFET or FDSOI device by post gate thermal condensation and oxidation of a high Ge percentage...
US-1,004,3892 Method for manufacturing a semiconductor device
A method for manufacturing a semiconductor device is provided, including forming a fin field effect transistor (FinFET) structure on a semiconductor substrate....
US-1,004,3891 Replacement metal gate scheme with self-alignment gate for vertical field effect transistors
A method is presented for forming a semiconductor structure. The method includes forming a fin structure over a substrate, forming a dummy gate over the fin...
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