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Patent # Description
US-1,004,3687 Bumped electrode arrays for microassemblers
An apparatus including a bumped electrode array and a method of fabricating a bumped electrode array is disclosed. The method includes providing a substrate for...
US-1,004,3686 Apparatus for treating surfaces of wafer-shaped articles
An apparatus for processing wafer-shaped articles, comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the...
US-1,004,3685 High definition heater and method of operation
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one...
US-1,004,3684 Self-limiting atomic thermal etching systems and methods
Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a...
US-1,004,3683 Plasma system, chuck and method of making a semiconductor device
A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region...
US-1,004,3682 Unit for supplying treatment liquid and apparatus for treating substrate
Disclosed is an apparatus for treating a substrate. The apparatus includes a support unit that supports the substrate, and a treatment liquid supply unit that...
US-1,004,3681 Fluid supply system, wafer processing system, and method of supplying fluid to wafer processing equipment
A fluid supply system includes a pressure tank configured to contain a pressurized gas and a fluid, a delivery point configured to be connected to a point of...
US-1,004,3680 Method for manufacturing semiconductor device
It is an object to provide a method for manufacturing a semiconductor device which can reduce degradation in package strength and a manufacturing cost, and...
US-1,004,3679 Method of fabricating array substrate
A method of fabricating an array substrate including forming an oxide semiconductor layer on a substrate; sequentially forming a gate insulating layer and a...
US-1,004,3678 Metal film polishing slurry composition, and method for reducing scratches generated when polishing metal film...
The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a...
US-1,004,3677 Method for manufacturing filling planarization film and method for manufacturing electronic device
A method for manufacturing a filling planarization film, the method including: a first coating step of applying a first coating liquid, containing a polyamine...
US-1,004,3676 Local semiconductor wafer thinning
A local thinning process is employed on the backside of a semiconductor substrate such as a wafer in order to improve the thermal performance of the electronic...
US-1,004,3675 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first...
US-1,004,3674 Germanium etching systems and methods
Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a...
US-1,004,3673 Final polishing method of silicon wafer and silicon wafer
A final polishing method using a polishing agent that contains colloidal silica, ammonia, and hydroxyethyl cellulose in which the colloidal silica has a primary...
US-1,004,3672 Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a...
A method for patterning a substrate including multiple layers using a sulfur-based mask includes providing a substrate including a first layer and a second...
US-1,004,3671 Transistor and fabrication method thereof
A junction-less transistor structure and fabrication method thereof are provided. The method includes providing a semiconductor substrate; and forming an...
US-1,004,3670 Systems and methods for low resistivity physical vapor deposition of a tungsten film
Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more...
US-1,004,3669 Method for fabricating metal gate structure
A method for fabricating a metal gate structure includes following steps. A substrate is provided and followed by forming a high-K dielectric layer on the...
US-1,004,3668 Selective dry etch for directed self assembly of block copolymers
Methods for preparing a patterned directed self-assembly layer generally include providing a substrate having a block copolymer layer including a first...
US-1,004,3667 Integrated method for wafer outgassing reduction
Implementations disclosed herein relate to methods for controlling substrate outgassing. In one implementation, the method includes removing oxides from an...
US-1,004,3666 Method for inter-chamber process
Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a method of processing a...
US-1,004,3665 Formation method of semiconductor device structure with semiconductor nanowire
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate, a first source...
US-1,004,3664 Multilayer structure, method for manufacturing same, semiconductor device, and crystalline film
A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer...
US-1,004,3663 Enhanced defect reduction for heteroepitaxy by seed shape engineering
A heteroepitaxially grown structure includes a substrate and a mask including a high aspect ratio trench formed on the substrate. A cavity is formed in the...
US-1,004,3662 Method of forming semiconductor substrate
A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a...
US-1,004,3661 Method for protecting layer by forming hydrocarbon-based extremely thin film
A method for protecting a layer includes: providing a substrate having a target layer; depositing a protective layer on the target layer, which protective layer...
US-1,004,3660 Semiconductor device or display device including the same
To provide a novel method for manufacturing a semiconductor device. To provide a method for manufacturing a highly reliable semiconductor device at relatively...
US-1,004,3659 Semiconductor device or display device including the same
A method for manufacturing a novel semiconductor device is provided. The method includes a first step of forming a first oxide semiconductor film over a...
US-1,004,3658 Precursors for silicon dioxide gap fill
A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon...
US-1,004,3657 Plasma assisted atomic layer deposition metal oxide for patterning applications
The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The...
US-1,004,3656 Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective...
US-1,004,3655 Plasma activated conformal dielectric film deposition
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption...
US-1,004,3654 Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as...
A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or...
US-1,004,3653 Maranagoni dry with low spin speed for charging release
A method of cleaning and drying a semiconductor wafer including inserting a semiconductor wafer into a chamber of a cleaning tool, spinning the semiconductor...
US-1,004,3652 Substrate cleaning method, substrate cleaning system, and memory medium
A method for cleaning a substrate, includes supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile...
US-1,004,3651 Semiconductor cleaner systems and methods
In an embodiment, the present invention discloses a EUV cleaner system and process for cleaning a EUV carrier. The euv cleaner system comprises separate dirty...
US-1,004,3650 Method and system for wet chemical bath process
A method for performing a wet chemical process over a semiconductor wafer is provided. The method includes moving the semiconductor wafer into a chemical...
US-1,004,3649 Shaped cathode for a field emission arrangement
The present invention relates to a field emission lighting arrangement, comprising an anode and a cathode, where the shape of the cathode is selected based on...
US-1,004,3648 High duty cycle ion spectrometer
An ion spectrometer is provided, comprising: an ion source, arranged to generate ions continuously with a first range of mass to charge ratios; and an ion trap,...
US-1,004,3647 Deposition aid for the manual deposition of mass spectrometric samples
The invention concerns the reduction of the risk of an incorrect assignment of samples to sample sites during the manual deposition of samples for ionization by...
US-1,004,3646 Method of generating ions of high mass to charge ratio by charge reduction
A method of charge stripping analyte ions is disclosed. The method comprises reacting the analyte ions with reagent ions or charged particles; and then urging...
US-1,004,3645 Method of localizing lipid double bonds
A method of mass spectrometry for analyzing lipids and similar biological molecules is disclosed. The lipid molecules may be ionized to form a plurality of...
US-1,004,3644 De-convolution of overlapping ion mobility spectrometer or separator data
A method of mass spectrometry is disclosed comprising separating first ions according to a first physico-chemical property in a first separator wherein at least...
US-1,004,3643 End block assembly, bearing assembly, and method for manufacturing a bearing assembly
In various embodiments, an end block assembly for rotatably mounting a tubular electrode in a processing chamber is provided. The end block assembly includes a...
US-1,004,3642 Magnetron sputtering source and arrangement with adjustable secondary magnet arrangement
The magnetron sputtering source comprises a target mount for mounting a target arrangement comprising a sputtering target having a sputtering surface; a primary...
US-1,004,3641 Methods and apparatus for processing chamber cleaning end point detection
Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments...
US-1,004,3640 Process tools and methods of forming devices using process tools
In accordance with an embodiment of the present invention, a process tool includes a chuck configured to hold a substrate. The chuck is disposed in a chamber....
US-1,004,3639 Substrate processing apparatus and substrate processing method
A substrate processing method includes an etching step of mounting a substrate on a surface of a rotatory table arranged in a vacuum chamber and supplying an...
US-1,004,3638 Compact configurable modular radio frequency matching network assembly for plasma processing systems
A compact configurable radio frequency (RF) matching network for matching RF energy output from an RF generator to a variable impedance load is disclosed. The...
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