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Patent # Description
US-1,005,0184 Quantum dots with reduced saturation quenching
The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to...
US-1,005,0183 Light emitting device
A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an...
US-1,005,0182 Method of manufacturing light emitting device
A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a...
US-1,005,0181 Light emitting diode and fabrication method thereof
A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a...
US-1,005,0180 LED with stress-buffer layer under metallization layer
Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers...
US-1,005,0179 LED module
An LED module 101 is provided with an LED chip 200 that includes a sub-mount substrate 210 made of Si and a semiconductor layer 220 laminated on the sub-mount...
US-1,005,0178 Light-emitting device and manufacturing method thereof
The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a...
US-1,005,0177 GaN based semiconductor light-emitting device and method for producing same
A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an...
US-1,005,0176 Light emitting diode die and manufacturing method thereof
An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer...
US-1,005,0175 Patterned layer design for group III nitride layer growth
A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a...
US-1,005,0173 Light emitting device comprising micro-structures
A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper...
US-1,005,0172 Substrate structure removal
Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be...
US-1,005,0171 Photodiode structures
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further...
US-1,005,0170 Method of manufacturing solar cell
A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to...
US-1,005,0169 Stacked optocoupler component
A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped...
US-1,005,0168 Back side illuminated image sensor with guard ring region reflecting structure
An imaging sensor system includes a pixel array having a plurality of pixel cells disposed in a first semiconductor layer, where each one of the plurality of...
US-1,005,0167 Light sensitive switch for semiconductor package tamper detection
Embodiments relate to the detection of semiconductor tampering with a light-sensitive circuit. A tamper detection device for an integrated circuit includes a...
US-1,005,0166 Silicon heterojunction photovoltaic device with wide band gap emitter
A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity,...
US-1,005,0165 Photovoltaic system with non-uniformly cooled photovoltaic cells
One or more embodiments of the present invention are directed to a photovoltaic system. The system comprises photovoltaic cells, arranged side-by-side to form...
US-1,005,0164 Photovoltaic modules having a polyvinylidene fluoride backsheet
The invention relates to a photovoltaic module for capturing and using solar radiation having as a backsheet a composition containing polyvinylidene fluoride....
US-1,005,0163 Solar cell apparatus and method for manufacturing same
A solar cell apparatus in which contamination of solar cells is suppressed and a power generation quantity of the solar cells is maintained for a long period of...
US-1,005,0162 Artificial tree for generating hybrid energy
An artificial tree for generating hybrid energy is described, having an elevated structure connected to and supported by a base structure integral with the...
US-1,005,0161 Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film...
A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the...
US-1,005,0160 Cu--Ga target, method of producing same, light-absorbing layer formed from Cu--Ga based alloy film, and CIGS...
A Cu--Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering...
US-1,005,0159 Lens structure
A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a...
US-1,005,0158 Method and apparatus for manufacturing optical device
An optical device manufacturing apparatus includes an encapsulating device for encapsulating an optical semiconductor element mounted on a substrate by a liquid...
US-1,005,0157 Spike implanted Schottky diode
A rectifying diode. The diode comprises a first conductor region and a second conductor region. The diode further comprises a diode conductive path between the...
US-1,005,0156 Resistive memory element
A resistive memory element includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type...
US-1,005,0155 Micromachined monolithic 3-axis gyroscope with single drive
This document discusses, among other things, a cap wafer and a via wafer configured to encapsulate a single proof-mass 3-axis gyroscope formed in an x-y plane...
US-1,005,0154 Trench vertical JFET with ladder termination
A vertical JFET with a ladder termination may be made by a method using a limited number of masks. A first mask is used to form mesas and trenches in active...
US-1,005,0153 Method for manufacturing semiconductor device
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device...
US-1,005,0152 Transistor, semiconductor device, and electronic device
To provide a transistor with favorable electrical characteristics, a transistor with stable electrical characteristics, or a highly integrated semiconductor...
US-1,005,0151 Dual-gate TFT array substrate and manufacturing method thereof, and display device
A dual-gate TFT array substrate and manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a common...
US-1,005,0150 Thin-film transistor, method of fabricating thin-film transistor, and display device
A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed...
US-1,005,0149 Gate structure for semiconductor device
A method of forming a semiconductor device includes forming a source/drain region and spacers on a substrate. The method further includes forming an etch stop...
US-1,005,0148 Semiconductor device and method of forming the same
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the...
US-1,005,0147 Semiconductor device and manufacturing method thereof
A method of semiconductor fabrication includes forming a dielectric layer over a substrate. A dummy gate structure is formed on the dielectric layer, which...
US-1,005,0146 Semiconductor device and method of forming the same
A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second...
US-1,005,0145 Methods for forming semiconductor device structures
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. A structure includes a relaxed...
US-1,005,0144 Fabrication of a strained region on a substrate
A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the...
US-1,005,0143 Integrated ferroelectric capacitor/ field effect transistor structure
A replacement gate structure (i.e., functional gate structure) is formed and recessed to provide a capacitor cavity located above the recessed functional gate...
US-1,005,0142 Semiconductor device and a method for manufacturing a semiconductor device
The characteristics of a semiconductor device are improved. A semiconductor device has a potential fixed layer containing a p type impurity, a channel layer,...
US-1,005,0141 Precise control of vertical transistor gate length
A transistor includes a vertical channel fin directly on a bottom source/drain region. A gate stack is formed on sidewalls of the vertical channel fin. Spacers...
US-1,005,0140 Rectifier diode
A pseudo-Schottky diode has an n-channel trench MOSFET which includes: a cathode, an anode, and located between the cathode and the anode, the following...
US-1,005,0139 Semiconductor device including a LDMOS transistor and method
In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization...
US-1,005,0138 Nitride semiconductor device
A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate,...
US-1,005,0137 Enhanced normally-off high electron mobility heterojunction transistor
A high electron mobility field-effect transistor of normally-off type, including a first layer of GaN with P-type doping; a second layer of GaN with N-type...
US-1,005,0136 High-power and high-frequency heterostructure field-effect transistor
In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source...
US-1,005,0135 Semiconductor device and method for driving same
A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second...
US-1,005,0134 Methods for fabricating anode shorted field stop insulated gate bipolar transistor
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor...
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