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Patent # Description
US-1,005,0202 Polycylc aromatic hydrocarbon copolymers and their use as organic semiconductors
The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising...
US-1,005,0201 Polymers of benzodithiophene and their use as organic semiconductors
The invention relates to novel polymers of benzodithiophene, methods and materials for their preparation, their use as semiconductors in organic electronic (OE)...
US-1,005,0200 Organic thin film transistor and manufacturing method thereof, array substrate
An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor...
US-1,005,0199 Organic light-emitting display apparatus and method of manufacturing the same
An organic light-emitting display apparatus, including: a first electrode disposed on the substrate; a pixel defining layer covering an edge of the first...
US-1,005,0198 Functional layer forming composition, method for producing functional layer forming composition, method for...
A functional layer forming composition is capable of obtaining a stable film forming property when a liquid phase process is used. A method produces a...
US-1,005,0197 Resistance variable memory structure
A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a...
US-1,005,0196 Dielectric doped, Sb-rich GST phase change memory
Phase change memory materials in a dielectric-doped, antimony-rich GST family of materials which are antimony rich relative to GST-225, are described that have...
US-1,005,0195 Resistive random access memory device having nano-scale tip and nanowire, memory array using the same and...
A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication...
US-1,005,0194 Resistive memory device including a lateral air gap around a memory element and method of making thereof
First electrically conductive lines can be formed over a substrate. A two-dimensional array of vertical stacks can be formed, each of which includes a first...
US-1,005,0193 Magnetoresistance structure patterning
In one aspect, a magnetoresistance structure includes a magnetoresistance stack that includes a plurality of layers that includes a first set of one or more...
US-1,005,0192 Magnetic memory device having buffer layer
The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM)...
US-1,005,0191 Oxide particles, piezoelectric element, and method for producing oxide particles
The present invention provides oxide particles having a compositional formula of Pb(Zr.sub.xTi.sub.1-x)O.sub.3, wherein x is 0.46.ltoreq.x.ltoreq.0.6; wherein a...
US-1,005,0190 Silicon integrated, out-of-plane heat flux thermoelectric generator
An enhanced electrical yield is achieved with an integrated thermoelectric generator (iTEG) of out-of-plane heat flux configuration on a substrate wafer having...
US-1,005,0189 Method of synthesizing bismuth-antimony seleno-telluride nanocrystals
A first aspect of the disclosure provides for method of synthesizing bismuth-antimony seleno-telluride thermoelectric nanocrystals. The method may comprise:...
US-1,005,0188 Light emitting diode chip and display composed of light emitting diode chips
A light emitting diode chip comprises a light emitting diode chip core and a coating layer. The coating layer covers side surfaces of the light emitting diode...
US-1,005,0187 Light-emitting device and manufacturing method of light-emitting device
The light-emitting device includes a base plate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulation layer, a first ohmic contact...
US-1,005,0186 Light emitting device
A light emitting device includes a molded package and one or more light emitting components. The molded package includes a recess, two leads, and a molded resin...
US-1,005,0185 Hermetically sealed illumination device with luminescent material and manufacturing method therefor
An illumination device is manufactured by providing (101) a substrate (1) having a first side (1a), sealingly coupling (106) an at least partially light...
US-1,005,0184 Quantum dots with reduced saturation quenching
The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to...
US-1,005,0183 Light emitting device
A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an...
US-1,005,0182 Method of manufacturing light emitting device
A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a...
US-1,005,0181 Light emitting diode and fabrication method thereof
A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a...
US-1,005,0180 LED with stress-buffer layer under metallization layer
Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers...
US-1,005,0179 LED module
An LED module 101 is provided with an LED chip 200 that includes a sub-mount substrate 210 made of Si and a semiconductor layer 220 laminated on the sub-mount...
US-1,005,0178 Light-emitting device and manufacturing method thereof
The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a...
US-1,005,0177 GaN based semiconductor light-emitting device and method for producing same
A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an...
US-1,005,0176 Light emitting diode die and manufacturing method thereof
An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer...
US-1,005,0175 Patterned layer design for group III nitride layer growth
A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a...
US-1,005,0174 Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions...
US-1,005,0173 Light emitting device comprising micro-structures
A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper...
US-1,005,0172 Substrate structure removal
Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be...
US-1,005,0171 Photodiode structures
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further...
US-1,005,0170 Method of manufacturing solar cell
A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to...
US-1,005,0169 Stacked optocoupler component
A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped...
US-1,005,0168 Back side illuminated image sensor with guard ring region reflecting structure
An imaging sensor system includes a pixel array having a plurality of pixel cells disposed in a first semiconductor layer, where each one of the plurality of...
US-1,005,0167 Light sensitive switch for semiconductor package tamper detection
Embodiments relate to the detection of semiconductor tampering with a light-sensitive circuit. A tamper detection device for an integrated circuit includes a...
US-1,005,0166 Silicon heterojunction photovoltaic device with wide band gap emitter
A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity,...
US-1,005,0165 Photovoltaic system with non-uniformly cooled photovoltaic cells
One or more embodiments of the present invention are directed to a photovoltaic system. The system comprises photovoltaic cells, arranged side-by-side to form...
US-1,005,0164 Photovoltaic modules having a polyvinylidene fluoride backsheet
The invention relates to a photovoltaic module for capturing and using solar radiation having as a backsheet a composition containing polyvinylidene fluoride....
US-1,005,0163 Solar cell apparatus and method for manufacturing same
A solar cell apparatus in which contamination of solar cells is suppressed and a power generation quantity of the solar cells is maintained for a long period of...
US-1,005,0162 Artificial tree for generating hybrid energy
An artificial tree for generating hybrid energy is described, having an elevated structure connected to and supported by a base structure integral with the...
US-1,005,0161 Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film...
A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the...
US-1,005,0160 Cu--Ga target, method of producing same, light-absorbing layer formed from Cu--Ga based alloy film, and CIGS...
A Cu--Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering...
US-1,005,0159 Lens structure
A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a...
US-1,005,0158 Method and apparatus for manufacturing optical device
An optical device manufacturing apparatus includes an encapsulating device for encapsulating an optical semiconductor element mounted on a substrate by a liquid...
US-1,005,0157 Spike implanted Schottky diode
A rectifying diode. The diode comprises a first conductor region and a second conductor region. The diode further comprises a diode conductive path between the...
US-1,005,0156 Resistive memory element
A resistive memory element includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type...
US-1,005,0155 Micromachined monolithic 3-axis gyroscope with single drive
This document discusses, among other things, a cap wafer and a via wafer configured to encapsulate a single proof-mass 3-axis gyroscope formed in an x-y plane...
US-1,005,0154 Trench vertical JFET with ladder termination
A vertical JFET with a ladder termination may be made by a method using a limited number of masks. A first mask is used to form mesas and trenches in active...
US-1,005,0153 Method for manufacturing semiconductor device
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device...
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