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Patent # Description
US-1,005,0133 Application of thin insulating film layer in semiconductor device and method of manufacturing semiconductor device
In a pin diode, a new means for a soft recovery other than the means for the soft recovery using an anode layer with a low concentration and a local lifetime...
US-1,005,0132 Method for manufacturing semiconductor device
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved....
US-1,005,0131 Method of forming a polysilicon sidewall oxide region in a memory cell
Methods of fabricating a memory cell of a semiconductor device, e.g., an EEPROM cell, having a sidewall oxide are disclosed. A memory cell structure may be...
US-1,005,0130 Method of fabricating a semiconductor structure by asymmetric oxidation of fin material formed under gate stack
The present disclosure provides semiconductor structures and fabrication methods thereof. An exemplary fabrication method includes providing a semiconductor...
US-1,005,0129 Method of forming fine patterns
A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first...
US-1,005,0128 Gate structure of field effect transistor with footing
In some embodiments, a field effect transistor structure includes a first semiconductor structure and a gate structure. The first semiconductor structure...
US-1,005,0127 Array substrate and display panel including the same
An array substrate for a display device is disclosed. The array substrate includes a substrate comprising a plurality of subpixels, at least one of which is a...
US-1,005,0126 Apparatus and method for power MOS transistor
A method comprises providing a substrate with a second conductivity type, growing a first epitaxial layer having the second conductivity type, growing a second...
US-1,005,0125 Vertical-transport field-effect transistors with an etched-through source/drain cavity
Methods of forming a structure for a vertical-transport field-effect transistor and structures for a vertical-transport field-effect transistor. A semiconductor...
US-1,005,0124 Method for producing a pillar-shaped semiconductor device
A method for producing a semiconductor device includes forming a semiconductor-pillar on a substrate and forming a laminated-structure of at least two composite...
US-1,005,0123 Integrated vertical nanowire memory
A nanowire structure includes successive crystalline nanowire segments formed over a semiconductor substrate. A first crystalline segment formed directly on the...
US-1,005,0122 Semiconductor device and manufacturing method of the same
To enhance reliability and performance of a semiconductor device that has a fully-depleted SOI transistor, while a width of an offset spacer formed on side...
US-1,005,0121 Replacement metal gate structures
Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method...
US-1,005,0119 Method for late differential SOI thinning for improved FDSOI performance and HCI optimization
Methods for selectively thinning a silicon channel area under a gate electrode and resulting devices are disclosed. Embodiments include providing a SOI...
US-1,005,0118 Semiconductor device configured for avoiding electrical shorting
In one aspect a semiconductor device as set forth herein can include a spacer having a first section of a first material and a second section of a second...
US-1,005,0117 Method of forming a high electron mobility transistor
A high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer...
US-1,005,0116 Semiconductor device structure and method for forming the same
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a...
US-1,005,0115 Tapered gate oxide in LDMOS devices
Approaches for LDMOS devices are provided. A method of forming a semiconductor structure includes forming a gate dielectric including a first portion having a...
US-1,005,0114 Semiconductor device and method of manufacturing the same
A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein,...
US-1,005,0113 Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a...
US-1,005,0112 Electron gas confinement heterojunction transistor
A high electron mobility heterojunction transistor, including a first GaN layer; a second, p-doped GaN layer on top of the first layer, including magnesium as a...
US-1,005,0111 Semiconductor device channel system and method
A system and method for a channel region is disclosed. An embodiment comprises a channel region with multiple bi-layers comprising alternating complementary...
US-1,005,0110 Device isolation for III-V substrates
Techniques for device isolation for III-V semiconductor substrates are provided. In one aspect, a method of fabricating a III-V semiconductor device is...
US-1,005,0109 Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and...
A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made...
US-1,005,0108 Semiconductor device
A semiconductor device may include a semiconductor layer, an insulation gate section, and a first conductivity-type semiconductor region; wherein the...
US-1,005,0107 Nanosheet transistors on bulk material
A method of forming a semiconductor device and resulting device. The method may form a first gate on a gate region of a starting substrate. The starting...
US-1,005,0106 Manufacturing method for semiconductor device
A p.sup.+ collector layer is provided in a rear surface of a semiconductor substrate which will be an n.sup.- drift layer and an n.sup.+ field stop layer is...
US-1,005,0105 Semiconductor device
To provide an optimal structure for electrically connecting an MOSFET region, a FWD region, and an IGBT region in parallel within one semiconductor chip by...
US-1,005,0104 Capacitor having a graphene structure, semiconductor device including the capacitor and method of forming the same
A capacitor includes a first graphene structure having a first plurality of graphene layers. The capacitor further includes a dielectric layer over the first...
US-1,005,0103 Method of forming semiconductor structures including metal insulator metal capacitor
A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a...
US-1,005,0102 Semiconductor device and manufacturing method thereof
Semiconductor devices and manufacturing method thereof are disclosed. The semiconductor device includes a substrate, a device layer, first and second conductive...
US-1,005,0101 Apparatus and associated method
A semiconductor arrangement comprising; a die of III-V semiconductor material; a resistor element integrated in the die, the resistor element comprising a track...
US-1,005,0100 Display apparatus
A display apparatus includes a substrate including a display area displaying an image and a peripheral area outside the display area, a main wiring and an...
US-1,005,0099 Organic light-emitting diode display including upper insulation layer and lower insulation layer having...
An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the OLED display includes a pixel disposed...
US-1,005,0098 Organic light-emitting display device including substrate having plurality of trenches and method of...
An organic light-emitting display device and a method of fabricating the same are provided. The organic light-emitting display device includes a substrate...
US-1,005,0097 Organic light-emitting diode display
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate, a plurality of OLEDs provided over the substrate,...
US-1,005,0096 Top emission device and organic light-emitting diode display device
An organic light-emitting diode display device includes a first substrate that includes a display region with a plurality of pixels and a non-display region in...
US-1,005,0095 Transparent organic light-emitting diode display with capacitor overlapping light transmitting region
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate having a main surface and a pixel provided...
US-1,005,0094 Display device
Provided is a display device including a plurality of pixels at least one of which has a first transistor and a light-emitting element. The first transistor...
US-1,005,0093 Organic light-emitting diode display with interconnect lines connected to four corners of the unit pixel
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a unit pixel over the stretchable...
US-1,005,0092 Array substrate, manufacturing method thereof and display device
An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate includes a substrate (10) and first thin-film...
US-1,005,0091 Display device capable of generating electricity
A display device includes a display panel displaying an image. A light source unit provides light to the display panel. A cover member covers a portion of an...
US-1,005,0090 Display device having a suppression
An organic EL display device provided with a display portion includes a flexible base material (substrate) in which the display portion is provided, an...
US-1,005,0089 Organic light-emitting display panel
An organic light-emitting display panel may prevent current leakage to an adjacent sub-pixel through a common layer having high hole mobility via the...
US-1,005,0088 Organic light-emitting diode display panel having the hole transport units corresponding to the light emitting...
An organic light-emitting diode (OLED) display panel and an OLED display device are provided. The OLED display panel comprises a first substrate; a first...
US-1,005,0087 Semiconductor memory device
A semiconductor memory device according to an embodiment includes: a substrate having a surface extending in a first direction and a second direction...
US-1,005,0086 Vertical cross-point memory arrays
A method of manufacturing a memory structure includes forming a plurality of vertically-stacked horizontal line layers, interleaving a plurality of electrically...
US-1,005,0085 Block architecture for vertical memory array
Three-dimensional memory structures that are configured to use area efficiently, and methods for providing three-dimensional memory structures that use area...
US-1,005,0084 Replacement materials processes for forming cross point memory
Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line...
US-1,005,0083 Magnetic structure with multilayered seed
The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that...
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