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Patent # Description
US-1,005,0082 Hall element for 3-D sensing using integrated planar and vertical elements and method for producing the same
A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a shallow trench isolation (STI) region and a...
US-1,005,0081 Light-emitting device and method for manufacturing the same
A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first...
US-1,005,0080 Optoelectronic device and method for manufacturing same
The invention relates to an optoelectronic device (50) including: a semiconductor substrate (14) doped with a first conductivity type; semiconductor contact...
US-1,005,0078 Light sensor
A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the...
US-1,005,0077 Back surface radiation type image sensor, imaging device, and electronic apparatus
A device including a substrate and an imaging element layer having a plurality of imaging elements is provided, where the imaging element layer is located...
US-1,005,0076 3D high resolution X-ray sensor with integrated scintillator grid
Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array...
US-1,005,0075 Multi-layer extraordinary optical transmission filter systems, devices, and methods
Systems, devices, and methods for an extraordinary optical transmission (EOT) image capture system comprising optical components to capture light corresponding...
US-1,005,0074 Semiconductor device and method of manufacturing the same
A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and...
US-1,005,0073 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels...
US-1,005,0072 Solid-state image pickup device and method of driving the same
Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a...
US-1,005,0071 Imaging unit, lens barrel, and portable terminal
To obtain an imaging unit, a lens barrel, and a portable terminal which can effectively suppress spring-back of solid-state imaging elements, while facilitating...
US-1,005,0070 Semiconductor device and electronic apparatus
A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric...
US-1,005,0069 Photodiode array
A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected...
US-1,005,0068 Fabrication method of array substrate, array substrate and display device
A fabrication method of an array substrate, an array substrate, and a display device are provided, the array substrate comprising a pixel region, an alignment...
US-1,005,0065 Semiconductor element and display device using the same
A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating...
US-1,005,0064 Transistor substrate and display device
In a transistor substrate of a display device, a plurality of signal lines to which any one of drive signals of a gate signal and a video signal is supplied...
US-1,005,0063 Display apparatus
A display apparatus includes a substrate, a circuit, and a pixel electrode. The substrate includes a display area and a peripheral area outside the display...
US-1,005,0062 Semiconductor device and method for manufacturing the same
A semiconductor device that occupies a small area and has a high degree of integration is provided. The semiconductor device includes a first insulating layer,...
US-1,005,0061 Array substrate and manufacturing method thereof, display device
An array substrate, a manufacturing method of the array substrate and a display device including the array substrate are disclosed. The array substrate includes...
US-1,005,0060 Semiconductor device and electronic device
To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor...
US-1,005,0059 Thin film transistor substrate and method for manufacturing the same
A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively...
US-1,005,0058 Semiconductor device
A semiconductor device includes a substrate including a first active region and a second active region, the first active region having a conductivity type that...
US-1,005,0057 Semiconductor device and manufacturing method thereof
A semiconductor device includes bit lines extending along a first direction, the bit lines being arranged along a second direction intersecting the first...
US-1,005,0056 Semiconductor device and manufacturing method thereof
Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer;...
US-1,005,0055 Semiconductor device
According to one embodiment, a semiconductor device includes: a substrate; a stacked body; a columnar portion; and a plate portion. The substrate has a major...
US-1,005,0054 Three-dimensional memory device having drain select level isolation structure and method of making thereof
A layer stack including an alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of memory stack...
US-1,005,0053 Carbon and fluorine concentration of electrodes for a semiconductor device
According to one embodiment, a semiconductor device includes a substrate and a multilayer body provided on the substrate. The multilayer body has electrode...
US-1,005,0052 Semiconductor device and manufacturing method for the same
A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit...
US-1,005,0051 Memory device and method for fabricating the same
A memory device includes memory includes a multi-layers stack includes a plurality of insulating layers and a plurality conductive layers alternatively stacked...
US-1,005,0050 Semiconductor device with metal gate memory device and metal gate logic device and method for manufacturing the...
A semiconductor device includes a substrate, at least one split gate memory device, and at least one logic device. The split gate memory device is disposed on...
US-1,005,0049 Apparatuses including memory arrays with source contacts adjacent edges of sources
Various apparatuses, including three-dimensional (3D) memory devices and systems including the same, are described herein. In one embodiment, a 3D memory device...
US-1,005,0048 Semiconductor memory device and method of manufacturing semiconductor memory device
A semiconductor memory device includes a substrate having a memory region and a peripheral region that are adjacent to each other, and a plurality of insulating...
US-1,005,0047 Method to improve floating gate uniformity for non-volatile memory device
The present disclosure relates a method for manufacturing an integrated circuit. In some embodiments, a semiconductor substrate is provided and made up of a...
US-1,005,0046 Static random-access memory (SRAM) cell array and forming method thereof
A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein...
US-1,005,0045 SRAM cell with balanced write port
An SRAM cell includes first through fifth active regions. The first through fourth active regions comprise channel regions and source/drain (S/D) regions of...
US-1,005,0044 Static random-access memory device
The present invention proposes a static random-access memory device (SRAM). The static random-access memory device is composed of two P-channel gates of loading...
US-1,005,0043 Static random access memory (SRAM) using FinFETs with varying widths of fin structures
In a method of manufacturing a semiconductor device, a first FinFET including a first fin structure, a first gate electrode structure disposed over the first...
US-1,005,0042 SRAM cell and logic cell design
An embodiment is an integrated circuit structure including a static random access memory (SRAM) cell having a first number of semiconductor fins, the SRAM cell...
US-1,005,0041 Semiconductor device and method of manufacturing the same
A semiconductor device includes a substrate having an active region defined by a device isolation layer and at least a gate trench linearly extending in a first...
US-1,005,0040 Semiconductor non-volatile DRAM (NVDRAM) device
A semiconductor device that can evacuate the information in a DRAM automatically at the time of power supply cutoff is provided. A memory cell includes a DRAM...
US-1,005,0039 Semiconductor structures with deep trench capacitor and methods of manufacture
An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench...
US-1,005,0038 Semiconductor devices including a gate structure in a substrate
Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device...
US-1,005,0037 Method and circuit for integrated circuit body biasing
The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices...
US-1,005,0036 Semiconductor structure having common gate
Various embodiments provide a semiconductor structure having a common gate and fabrication method of the semiconductor structure. In an exemplary method, after...
US-1,005,0035 Method of making protective layer over polysilicon structure
A method includes forming a first polysilicon structure over a first portion of a substrate. A second polysilicon structure is formed over a second portion of...
US-1,005,0034 Semiconductor device and associated methods
A semiconductor device comprising: a die-source-terminal, a die-drain-terminal and a die-gate-terminal; a semiconductor-die; an ...
US-1,005,0033 High voltage integration for HKMG technology
The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a first oxide component is disposed on a substrate...
US-1,005,0032 System on chip
Systems on chips are provided. A system on chip (SoC) includes a first gate line, a second gate line and a third gate line extending in a first direction, a...
US-1,005,0031 Power conventer and semiconductor device
A power converter includes a semiconductor element disposed on a substrate, a thermistor element for detecting the temperature of the substrate, the thermistor...
US-1,005,0030 Semiconductor device and fabricating method thereof
A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET...
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