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Patent # | Description |
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US-1,005,6451 |
Semiconductor device and method for producing semiconductor device Hydrogen atoms and crystal defects are introduced into an n- semiconductor substrate by proton implantation. The crystal defects are generated in the n-... |
US-1,005,6450 |
Semiconductor device A semiconductor device includes a semiconductor substrate with: a drift layer; a base layer; and a collector layer and a cathode layer. In the semiconductor... |
US-1,005,6449 |
Semiconductor device and method for producing semiconductor device Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n.sup.- drift layer, forming an n-type... |
US-1,005,6448 |
Coplanar metal-insulator-metal capacitive structure A method of fabricating a metal-insulator-metal (MIM) capacitor structure on a substrate includes forming a patterned metal layer over the substrate; forming an... |
US-1,005,6447 |
Organic light emitting display device Embodiments relate to an organic light emitting display device according to the present disclosure including: a plurality of pixels which includes red, white,... |
US-1,005,6446 |
Display apparatus A display apparatus includes a substrate having a bending region between a first region and a second region, the bending region being configured to be bent... |
US-1,005,6445 |
Manufacture method of AMOLED pixel drive circuit The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be... |
US-1,005,6444 |
Flexible display device and method of manufacturing the same A flexible display device includes a substrate, a light emitting layer, a first insulating layer, and a conductive layer. The substrate includes a bent region... |
US-1,005,6443 |
Electronic devices with displays An electronic device may have a flexible portion that allows the device to be folded. The device may have a flexible display. The flexible display may have edge... |
US-1,005,6442 |
Organic light emitting diode array substrate, method for manufacturing the
same and display device An organic light emitting diode array substrate, a method for manufacturing the same and a display device are provided. The organic light emitting diode array... |
US-1,005,6441 |
Method of manufacturing organic light emitting display device having
cathode electrode connected with an... A method of manufacturing an organic light emitting display (OLED) device can include providing an anode electrode and an auxiliary electrode on a substrate;... |
US-1,005,6440 |
Organic light emitting display device and method of manufacturing the same Discussed is an organic light emitting display device that may include an active area and a pad area on a substrate, wherein the active area includes an anode... |
US-1,005,6439 |
Image capturing apparatus An image capturing apparatus including a sensor, an organic light emitting diode (OLED) display panel, and a collimator is provided. The OLED display panel is... |
US-1,005,6438 |
Display device and method of manufacturing the same A stacked body including an organic film stacked on and in contact with an inorganic substrate, a wiring pattern, a first resin layer, a light-emitting element... |
US-1,005,6437 |
Stereoscopic imaging apparatus and user terminal The present invention provides a stereoscopic imaging apparatus (100), including: a display module (130), including a display pixel layer (131) and a first... |
US-1,005,6436 |
Organic light emitting display device comprising color filters and method
of manufacturing the same An organic light emitting display device includes a substrate, first electrodes disposed on the substrate; an organic light emitting layer formed on the first... |
US-1,005,6435 |
Organic light emitting diode display An organic light emitting diode display includes a stretchable substrate, a plurality of pixel forming plates, first and second pixels, and a cut-out groove.... |
US-1,005,6434 |
Organic light emitting display panel and method of manufacturing the same An exemplary embodiment discloses an organic light emitting display panel including a base substrate comprising first pixels configured to emit a light having a... |
US-1,005,6433 |
Semiconductor memory and method of manufacturing the same A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers... |
US-1,005,6432 |
Self-rectifying RRAM cell structure having two resistive switching layers
with different bandgaps and RRAM 3D... The present disclosure provides a self-rectifying RRAM cell structure including a first electrode layer formed of a nitride of a first metal element, a second... |
US-1,005,6431 |
Variable resistance memory device A variable resistance memory device may include a word line extending in a first direction, a bit line extending in a second direction crossing the first... |
US-1,005,6430 |
MRAM with voltage dependent in-plane magnetic anisotropy Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a fixed... |
US-1,005,6429 |
Electrode structure of optoelectronic device An optoelectronic device includes a first optoelectronic unit; a second optoelectronic unit; a third optoelectronic unit formed between the first optoelectronic... |
US-1,005,6428 |
Semiconductor device and method of forming curved image sensor region
robust against buckling A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular,... |
US-1,005,6427 |
Front side illuminated image sensor device structure and method for
forming the same An FSI image sensor device structure is provided. The FSI image sensor device structure includes a substrate and a barrier structure formed in the substrate.... |
US-1,005,6426 |
Apparatus and method for fabricating a light guiding grid A light guide grid can include a grid structure having a plurality of intersecting grid lines, each grid line having a width w, and a plurality of openings for... |
US-1,005,6425 |
Methods of making semiconductor X-ray detector Disclosed herein is a method of making an apparatus suitable for detecting x-ray, the method comprising: attaching a chip comprising an X-ray absorption layer... |
US-1,005,6424 |
Semiconductor device, electrical device system, and method of producing
semiconductor device A semiconductor device includes an SOI substrate formed of a first semiconductor layer having a first conductive type, an embedded oxide film, and a circuit... |
US-1,005,6423 |
Multispectral imaging device A multispectral imaging device, comprising a pixel array, each said pixel comprises at least a first subpixel and a second subpixel, each subpixel comprises at... |
US-1,005,6422 |
Stacked semiconductor chip RGBZ sensor An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The... |
US-1,005,6421 |
Imaging device and imaging method An imaging device, comprising: a pixel group in which unit pixels including a plurality of pixels receiving light fluxes having passed through different pupil... |
US-1,005,6420 |
Semiconductor device and manufacturing method thereof Provided is a semiconductor device with improved performance. The semiconductor device includes a photodiode having a charge storage layer (n-type semiconductor... |
US-1,005,6419 |
Chip package having chip connected to sensing device with redistribution
layer in insulator layer A chip package is provided. The chip package includes a sensing device. The chip package also includes a first conductive structure disposed on the sensing... |
US-1,005,6418 |
Imaging element for generating a pixel signal corresponding to light
receiving elements An imaging element includes: a first substrate; first light receiving elements regularly disposed on the first substrate; first color filters each of which is... |
US-1,005,6417 |
Image-sensor structures An image-sensor structure is provided. The image-sensor structure includes a substrate with a plurality of photoelectric conversion units formed therein, a... |
US-1,005,6416 |
Majority current assisted radiation detector device The invention relates to a majority current assisted detector device, comprising a semiconductor layer of a first conductivity type epitaxially grown on a... |
US-1,005,6415 |
Germanium-silicon light sensing apparatus A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for... |
US-1,005,6414 |
Thin film transistor array substrate having black matrix formed in
non-display zone and common electrode formed... A thin film transistor array substrate, a manufacturing method thereof and a display device are provided. The array substrate includes a substrate and a... |
US-1,005,6413 |
Semiconductor device A semiconductor device that is less influenced by variations in characteristics between transistors or variations in a load, and is efficient even for... |
US-1,005,6411 |
Array substrate, preparation and driving method thereof, liquid crystal
display panel and display device The present invention discloses an array substrate, preparation and driving methods thereof, a liquid crystal display panel and a display device, for reducing... |
US-1,005,6410 |
Method for manufacturing array substrate, and array substrate, display
panel and display device A method for manufacturing an array substrate, and an array substrate, a display panel and a display device are provided. The method may include: forming, on... |
US-1,005,6408 |
Structure and method to form a FinFET device A method for fabricating a FinFET device includes forming a silicon-on-insulator (SOI) substrate having a semiconductor layer overlaying a buried oxide (BOX)... |
US-1,005,6407 |
Semiconductor device and a method for fabricating the same A semiconductor device includes a first gate structure disposed on a substrate. The first gate structure includes a first gate electrode, a first cap insulating... |
US-1,005,6406 |
Semiconductor integrated circuit device comprising MISFETs in SOI and bulk
subtrate regions The semiconductor integrated circuit device has a hybrid substrate structure which includes both of an SOI structure and a bulk structure on the side of the... |
US-1,005,6405 |
Semiconductor device and manufacturing method thereof In the case where a signal delay is found in a circuit operation in a semiconductor chip, when a repeater for delay reduction is additionally formed as a result... |
US-1,005,6404 |
Semiconductor memory devices having closely spaced bit lines The inventive concepts relate to a semiconductor memory device. The semiconductor memory device includes a substrate including a circuit region and first and... |
US-1,005,6403 |
Semiconductor memory A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions... |
US-1,005,6402 |
Semiconductor device Improvements are achieved in the characteristics of a nonvolatile memory. In plan view, in a first isolation region which is an element isolation region... |
US-1,005,6400 |
Stacked semiconductor device According to one embodiment, a semiconductor device includes a semiconductor substrate, a stacked body, and a first insulating film. The stacked body is... |
US-1,005,6399 |
Three-dimensional memory devices containing inter-tier dummy memory cells
and methods of making the same A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers, a first memory opening... |