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Patent # Description
US-1,005,6278 Apparatus and method for transferring electronic devices
The present invention relates to an apparatus for transferring electronic devices from a holding unit to a processing station. The apparatus comprises first and...
US-1,005,6277 Polishing method
A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing...
US-1,005,6276 Fluid monitoring system and method for semiconductor fabrication tools
A system and method provide for monitoring and controlling fluid flow in semiconductor manufacturing apparatuses. The method and system include a vortex flow...
US-1,005,6275 Immersion de-taping
Embodiments using immersion de-taping are described. A substrate having a substrate tape attached thereto is provided. The substrate includes electrically...
US-1,005,6274 System and method for forming a sealed chamber
According to an embodiment of the invention, there is provided a system, comprising: a first chamber; a second chamber; a chuck; a movement system; wherein the...
US-1,005,6273 Heating apparatus, substrate heating apparatus, and method of manufacturing semiconductor device
A heating apparatus includes a heater, an electron reflection plate, a filament arranged between the heater and the electron reflection plate, a heating power...
US-1,005,6272 Gas-controlled bonding platform for edge defect reduction during wafer bonding
A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding...
US-1,005,6271 Metal etch system
Embodiments of systems and methods of etching material from the surface of a wafer are provided. In one representative embodiment, an apparatus comprises a...
US-1,005,6270 Substrate treating apparatus and substrate treating method
Disclosed is a substrate treating apparatus including a substrate holder, a rotating drive unit, a treatment liquid supplying unit, an exterior cup, and an...
US-1,005,6269 Substrate liquid processing apparatus
Gas-liquid separation of an exhaust gas from a liquid processing unit can be improved. A substrate liquid processing apparatus includes a liquid processing...
US-1,005,6268 Limiting electronic package warpage
An electronic package includes a carrier, semiconductor chip, a lid, and a lid-ring. The carrier includes a top surface and a bottom surface configured to be...
US-1,005,6267 Substrate design for semiconductor packages and method of forming same
An embodiment device includes a first die, a second die, one or more redistribution layers (RDLs) electrically connected to the first die, a plurality of...
US-1,005,6266 Method for manufacturing a resistive device for a memory or logic circuit
A method for manufacturing a resistive device, includes depositing a first electrically conductive layer on a substrate; forming an etching mask on the first...
US-1,005,6265 Directed self-assembly process with size-restricted guiding patterns
A method includes providing a substrate; forming mandrel patterns over the substrate; and forming spacers on sidewalls of the mandrel patterns. The method...
US-1,005,6264 Atomic layer etching of GaN and other III-V materials
Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN) and related apparatus. In some embodiments, the methods involve...
US-1,005,6263 Method of processing SiC wafer
A SiC wafer is processed by a laser beam having a wavelength that transmits SiC to form a peeling plane in a region of the wafer which corresponds to a device...
US-1,005,6262 Non-volatile memory having individually optimized silicide contacts and process therefor
In an integrated-circuit memory, performance is increased by reducing an electrical contact resistance between a metal layer and an upper poly layer (a control...
US-1,005,6261 P type MOSFET
Provided are P type MOSFETs and methods for manufacturing the same. The method may include forming source/drain regions in a semiconductor substrate; forming an...
US-1,005,6260 Schottky diode with dielectrically isolated diffusions, and method of manufacturing the same
A method for manufacturing a semiconductor device includes forming a first well region in a semiconductor substrate, forming isolation structures on the...
US-1,005,6259 Single conductor alloy as diffusion barrier system and simulataneous OHMIC contact to N- and P-type silicon carbide
Use of a single alloy conductor to form simultaneous ohmic contacts (SOC) to n- and p-type 4H-SiC. The single alloy conductor also is an effective diffusion...
US-1,005,6258 Self-aligned double spacer patterning process
A method includes forming a mask layer over a target layer. A merge cut feature is formed in the mask layer. A first mandrel layer is formed over the mask layer...
US-1,005,6257 Methods for forming fine patterns using spacers
There is provided a method for forming fine patterns. The method includes forming a pattern divider on an underlying layer, forming a mask layer on the...
US-1,005,6256 Method of priming photoresist before application of a shrink material in a lithography process
A photoresist layer is formed over a patternable layer. The photoresist layer containing a negative tone photoresist material. An exposure process is performed...
US-1,005,6255 Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy
Described herein is a FinFET device in which epitaxial layers of semiconductor material are formed in the source/drain regions on dielectrically isolated fin...
US-1,005,6254 Methods for removal of selected nanowires in stacked gate all around architecture
A method forms first and second sets of fins. The first set includes a first stack of layer pairs where each layer pair contains a layer of Si having a first...
US-1,005,6253 Method for forming a vertical hetero-stack and a device including a vertical hetero-stack
Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to...
US-1,005,6252 Process of forming nitride semiconductor layers
A process of forming a semiconductor device by use of a MOCVD technique is disclosed. The semiconductor device, which is made of primarily nitride semiconductor...
US-1,005,6251 Hetero-integration of III-N material on silicon
A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench....
US-1,005,6249 Atomic layer deposition of antimony oxide films
Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony...
US-1,005,6248 Method for measuring overall concentration of oxidizing substances, substrate cleaning method, and substrate...
To allow online monitoring of the overall concentration of oxidizing substances in electrolyzed sulfuric acid, for example, in a cleaning system, absorbance...
US-1,005,6247 Method of manufacturing silicon carbide semiconductor device
In accordance with the following step of a method of manufacturing a MOSFET, a first cutting step of cutting a silicon carbide wafer along a plane substantially...
US-1,005,6246 Semiconductor wafer
A semiconductor wafer which is disk-shaped as a whole, and which has a substantially flat face, a back substantially flat in at least a main portion thereof and...
US-1,005,6245 DC gas discharge lamp having a thorium-free cathode
A DC gas discharge lamp includes an anode and a cathode having a first cathode segment, which forms the surface of the cathode at least in a region of the...
US-1,005,6244 Tuning multipole RF amplitude for ions not present in calibrant
A mass spectrometry apparatus includes an ion source configured to generate ions; an ion guide configured to guide ions from the ion source towards a detector;...
US-1,005,6243 Apparatus and method for rapid chemical analysis using differential desorption
The present invention is directed to a method and device to generate a chemical signature for a mixture of analytes. The present invention involves using a SPME...
US-1,005,6242 Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary...
US-1,005,6241 Addition of reactive species to ICP source in a mass spectrometer
Disclosed is a method of inductively coupled plasma mass spectrometry (ICP-MS), comprising steps of introducing at least one sample comprising at least one...
US-1,005,6240 Systems and methods for scaling injection waveform amplitude during ion isolation
This disclosure describes a method of adjusting the amplitude of broadband waveforms for isolation, especially during injection to a multipole trapping device....
US-1,005,6239 Electrical vacuum-compatible feedthrough structure and detector assembly using such feedthrough structure
An ultra-high vacuum (UHV) compatible feedthrough structure and a detector assembly using such feedthrough structure, the feedthrough structure comprising a...
US-1,005,6238 Adjustable return path magnet assembly and methods
The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly...
US-1,005,6237 Low pressure arc plasma immersion coating vapor deposition and ion treatment
A coating system includes a vacuum chamber and a coating assembly. The coating assembly includes a vapor source, a substrate holder, a remote anode electrically...
US-1,005,6236 Plasma processing method
A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the...
US-1,005,6235 Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device includes the steps of: (a) placing a semiconductor wafer over a stage provided in a chamber, the pressure in...
US-1,005,6234 Plasma equipment for treating powder
A powder plasma processing apparatus is disclosed. The powder plasma processing apparatus includes: a chamber configured to perform plasma processing on a...
US-1,005,6233 RPS assisted RF plasma source for semiconductor processing
Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled...
US-1,005,6232 Charged particle beam apparatus and plasma ignition method
A charged particle beam apparatus according to this invention includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation...
US-1,005,6231 TCCT match circuit for plasma etch chambers
A match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and...
US-1,005,6230 Power supply system, plasma processing apparatus and power supply control method
A power supply system includes a high frequency power supply which supplies a high frequency power; a DC power supply which supplies a first negative DC voltage...
US-1,005,6229 Charged-particle beam exposure method and charged-particle beam correction method
A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to...
US-1,005,6228 Charged particle beam specimen inspection system and method for operation thereof
A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen...
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