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Patent # Description
US-1,005,6175 Thermistor mounting apparatus and thermistor component
In order to realize a thermistor on a base substrate without restricting the layout of a wiring layer, a thermistor mounting apparatus is provided, the...
US-1,005,6174 Thermistor material for a short range of low temperature use and method of manufacturing the same
A thermistor material for a short range of low temperature use includes a matrix material composed of nitride-based and/or oxide-based insulating ceramics,...
US-1,005,6173 Apparatus for extruding a coating around an electric conductor
Apparatus for the production of an electric conductor provided with at least a layer of coating plastic material. The apparatus comprises: a head for the...
US-1,005,6172 Method for producing a coaxial cable
The invention relates to a method for producing a stranded inner conductor (1), and to a coaxial cable (9). In a first step, a stranded inner conductor (2) is...
US-1,005,6171 Submarine cable and multilayer tape for impermeable layer of same
Protrusion portions and recess portions are formed on a metal layer. The protrusion portions are repeatedly formed in a lattice shape at a pitch of P....
US-1,005,6170 High density shielded electrical cable and other shielded cables, systems, and methods
A shielded cable includes adjacent first and second conductor sets, each conductor set includes a pair of insulated conductors. At least 90% of a periphery of...
US-1,005,6168 Electrically conductive polyamide/polyphenylene ether resin composition and molded article for vehicle using...
An electrically conductive polyamide/polyphenylene ether resin composition and a molded article for vehicles using the same. The resin composition includes a...
US-1,005,6167 High-conductivity two-dimensional polyaniline nanosheets and method for fabricating the same
The present invention relates to a new method of synthesizing two-dimensional polyaniline (PANI) nanosheets using ice as a removable hard template. The method...
US-1,005,6166 Copper-cobalt-silicon alloy for electrode material
Disclosed is a copper-cobalt-silicon (Cu--Co--Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend...
US-1,005,6165 Copper alloy for electronic device, method for producing copper alloy for electronic device, and copper alloy...
This copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which is composed of Mg at a content of 3.3 to 6.9 atomic %, and a...
US-1,005,6164 Translating x-ray beam transmission profile shaper
An imaging system (300) includes a radiation source (308) that emits radiation that traverses in a direction of an examination region (306) during a scan and a...
US-1,005,6163 Method for dissolving an oxide layer
The invention relates to a method for dissolving an oxide layer containing chromium, iron, nickel, and radionuclides by means of an aqueous oxidative...
US-1,005,6162 X-ray shielding system for use with an X-ray producing gantry
Disclosed is a shielding system for customized shielding of a patient or an operator from X-rays generated from a gantry. The shielding system is mounted on the...
US-1,005,6161 CRDM with separate scram latch engagement and locking
A control rod drive mechanism (CRDM) configured to latch onto the lifting rod of a control rod assembly and including separate latch engagement and latch...
US-1,005,6160 Integral molten salt reactor
The present relates to the integration of the primary functional elements of graphite moderator and reactor vessel and/or primary heat exchangers and/or control...
US-1,005,6159 System and method for medical resource utilization management
A gateway, a server, and a method are provided. The method includes receiving at least one message from a corresponding number of gateways, wherein each...
US-1,005,6158 Determination of enhancing structures in an anatomical body part
A data processing method for determining an enhancing structure of interest within an anatomical body part, wherein the structure of interest exhibits an...
US-1,005,6157 Memory apparatus with post package repair
Apparatuses for memory repair for a memory device are described. An example apparatus includes: a non-volatile storage element that stores information; a...
US-1,005,6156 Information processing apparatus and method of controlling arithmetic processing apparatus
An information processing apparatus includes an arithmetic processing apparatus, a main memory and an auxiliary memory configured to store a program for...
US-1,005,6155 Systems, methods, and apparatuses for implementing testing of a far memory subsystem within two-level memory...
A stacked semiconductor package includes a functional silicon die, and a test controller having signature accumulation logic embedded therein. A fabric to route...
US-1,005,6154 Apparatuses and methods for flexible fuse transmission
Apparatuses and methods for transmitting fuse data from fuse arrays to latches are described. An example apparatus includes: a plurality of fuse arrays, each...
US-1,005,6153 Semiconductor device and operating method of same
A semiconductor device according to an embodiment includes first and second memory cells, a first word line, and first and second bit lines. The first memory...
US-1,005,6152 Methods of reading data in nonvolatile memory devices and nonvolatile memory devices
In a method of reading data in a nonvolatile memory device including a plurality of memory cells arranged at intersections of a plurality of word-lines and a...
US-1,005,6151 Multi-read only memory finite state machine
A multi-read only memory (ROM) state machine circuit includes first and second ROMs (or other memory types), each ROM addressable as a plurality of rows. Each...
US-1,005,6150 Non-volatile semiconductor memory device
According to one embodiment, a non-volatile semiconductor memory device is disclosed. The device includes a semiconductor substrate, and a memory cell array...
US-1,005,6149 Semiconductor memory column decoder device and method
Semiconductor memory devices and methods include a flash memory cell array fabricated in a well, with memory cells in the same column connected to each other in...
US-1,005,6148 Nonvolatile memory device including multi-plane structure
A nonvolatile memory device includes a memory cell array having a first plane and a second plane and an address decoder connected to the first plane through...
US-1,005,6147 Two-level storage device with faster front end
A data storage device includes a first data storage medium having a first capacity and a first speed, a second data storage medium having a second capacity and...
US-1,005,6146 Electric field storage device
The system includes a data storage medium comprising cells, an excitation circuit, and an emitter. The cells arranged in a three dimensional space. The...
US-1,005,6145 Resistive memory transition monitoring
A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a...
US-1,005,6144 Nonvolatile semiconductor memory device and its operation program
According to one embodiment, an operation program of a nonvolatile semiconductor memory device includes: a first step for determining whether data has been...
US-1,005,6143 Correlated electron switch programmable fabric
Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
US-1,005,6142 Generating a representative logic indicator of grouped memristors
A device for generating a representative logic indicator of grouped memristors is described. The device includes a memristor array. The memristor array includes...
US-1,005,6141 Current behavior of elements
An example device in accordance with an aspect of the present disclosure includes a first module, a second module, and a third module. The first module is...
US-1,005,6140 Memristor memory with volatile and non-volatile states
In an example, a method of controlling a memristor memory includes operating the memristor memory in a volatile mode, wherein switching a state of a memristor...
US-1,005,6139 Managing threshold voltage shift in nonvolatile memory
Apparatus, systems, and methods to correct for threshold voltage drift in non-volatile memory devices are disclosed and described. In one example, a compensated...
US-1,005,6138 Electronic device
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include a memory region comprising a plurality of memory cells...
US-1,005,6137 Apparatuses and methods for accessing memory cells
Apparatuses and methods for accessing a memory cell are described. An example apparatus includes a first voltage circuit coupled to a node and is configured to...
US-1,005,6136 Cross-point memory single-selection write technique
A system and technique is disclosed for writing data in a cross-point memory. The state of one or more memory cells of the cross-point memory are sensed and...
US-1,005,6135 Programming schemes for multi-level analog memory cells
A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume...
US-1,005,6134 Ternary 2-9 line address decoder realized by CNFET
The present invention discloses a ternary 2-9 line address decoder realized by CNFET, comprising two ternary 1-3 line address decoders of the same structure,...
US-1,005,6133 Semiconductor memory device
A semiconductor memory device includes a cell array including memory cells. A potential generation circuit applies a first potential to the memory cells. A...
US-1,005,6132 Assignable registers on a preamp chip
Amplifiers, preamplifiers, and other circuits may have registers that are assigned to store data corresponding to certain functions. When the data stored in the...
US-1,005,6131 Semiconductor memory device including first memory cell and second memory cell over first memory cell
The semiconductor device includes a first memory cell, and a second memory cell thereover. The first memory cell includes first and second transistors, and a...
US-1,005,6130 Strobe-offset control circuit
A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first...
US-1,005,6129 Cell bottom node reset in a memory array
Methods, systems, and devices for cell bottom node reset in a memory array are described. The memory array may include a plurality of ferroelectric memory cells...
US-1,005,6128 Semiconductor storage device
A semiconductor storage device includes a first memory area; a first selection circuit which selectively connects one of first lines to one of first bit lines...
US-1,005,6127 Supply-switched dual cell memory bitcell
In one embodiment, a bit state in a supply-switched dual cell memory bitcell in accordance with the present description, may be read by coupling a supply line...
US-1,005,6126 Magnetic tunnel junction based memory device
A magnetic tunnel junction based memory device comprising a magnetic tunnel junction element and writing circuitry. The magnetic tunnel junction element...
US-1,005,6125 Data storage device and operating method thereof
A data storage device includes a memory device suitable for storing and outputting data in synchronization with a strobe signal; and a controller suitable for...
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