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Patent # Description
US-1,006,2761 Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes steps of forming a trench in a surface of a semiconductor substrate of a first conductivity type in a...
US-1,006,2760 Semiconductor device
A semiconductor device according to the present invention includes a semiconductor layer of SiC of a first conductivity type, a plurality of body regions of a...
US-1,006,2759 Silicon carbide semiconductor device and method for manufacturing same
A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation...
US-1,006,2758 Semiconductor device
A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a...
US-1,006,2757 Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device
A semiconductor device includes: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding...
US-1,006,2756 Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same
A semiconductor structure can include a substrate, a high-voltage blocking layer overlying the substrate, a doped buffer layer overlying the high-voltage layer,...
US-1,006,2755 Nanotube termination structure for power semiconductor devices
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a termination...
US-1,006,2754 Semiconductor devices and methods of fabricating the same
A semiconductor device includes a substrate provided with an active pattern; a gate structure provided on the active pattern to cross the active pattern; and...
US-1,006,2753 Semiconductor device
A semiconductor device includes a semiconductor substrate having a drift layer, a base layer, a collector layer and a cathode layer. The semiconductor substrate...
US-1,006,2752 Fabrication of nanowire vertical gate devices
A method of forming a nanowire heterostructure, including, forming a dummy nanowire on a substrate, forming a sacrificial cover layer on the dummy nanowire,...
US-1,006,2751 Semiconductor device
A semiconductor device comprises a fin shaped structure, a shallow trench isolation, a diffusion break structure and a gate electrode. The fin shaped structure...
US-1,006,2750 Semiconductor device and method of manufacturing semiconductor device
An active region through which current flows in a semiconductor device includes an n.sup.--type silicon carbide epitaxial layer formed on a front surface of an...
US-1,006,2749 High voltage semiconductor devices and methods of making the devices
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The...
US-1,006,2748 Segmented guard-ring and chip edge seals
The present disclosure relates to semiconductor structures and, more particularly, to segmented guard-ring and chip edge seals and methods of manufacture. The...
US-1,006,2747 Semiconductor device
In a semiconductor device, an AlGaN layer includes a first AlGaN layer and a second AlGaN layer. The second AlGaN layer is positioned between a gate structure...
US-1,006,2746 Semiconductor rectifier and manufacturing method thereof
A semiconductor rectifying device includes a substrate of a first conductivity type, an epitaxial layer of the first conductivity type, a filling structure, an...
US-1,006,2745 Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising...
A method of forming an array of capacitors comprises forming elevationally-extending and longitudinally-elongated capacitor electrode lines over a substrate....
US-1,006,2744 Display module
An organic display device includes a pixel driving circuit having a thin film transistor connected to a current supply line and a capacitor. A first insulation...
US-1,006,2743 Display device
A display device includes: a plurality of pixels each including a driving thin film transistor and a storage capacitor, wherein each of the pixels further...
US-1,006,2742 Semiconductor device
Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a...
US-1,006,2741 Method for manufacturing bonded body
A method of manufacturing joined body including: firstly, putting sheet material in intimate contact with first substrate to cover, with resin layer of sheet...
US-1,006,2740 Display device with a buffer layer filled with bubbles and packaging method
A display device and a display device packing method are provided. The display device comprises a display panel having a display region and a non-display...
US-1,006,2739 Flexible display device
A flexible display device includes display panel, a touch panel including a touch sensor and a second touch sensor intersecting the first touch sensor, in which...
US-1,006,2738 Devices combining thin film inorganic LEDs with organic LEDs and fabrication thereof
Devices including organic and inorganic LEDs are provided. Techniques for fabricating the devices include fabricating an inorganic LED on a parent substrate and...
US-1,006,2737 OLED pixel arrangement structure and display device
An OLED pixel arrangement structure includes multiple first sub-pixels, multiple second sub-pixels and multiple third sub-pixels. Four adjacent ones of the...
US-1,006,2736 Display device having varying distances between reflecting layers
A reflecting layer is provided for each of a white pixel PW and a plurality of chromatic color pixels PR, PG and PB. A semitransparent reflecting layer is...
US-1,006,2735 Innovative approach of 4F.sup.2 driver formation for high-density RRAM and MRAM
Some embodiments of the present disclosure relate to an integrated chip having a vertical transistor device. The integrated chip may have a semiconductor body...
US-1,006,2734 Method for fabricating a semiconductor device
A method for fabricating a semiconductor device includes the steps of: forming a channel layer on a substrate; forming a gate dielectric layer on the channel...
US-1,006,2733 Integrated circuits with magnetic tunnel junction memory cells and methods for producing the same
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method for producing an integrated circuit includes forming a...
US-1,006,2732 DMTJ structure for sub-25NM designs with cancelled flowering field effects
A magnetic memory device comprises a first reference magnetic layer, a first tunnel barrier layer, a second tunnel barrier layer, and a free magnetic layer...
US-1,006,2731 Spin-orbit logic with charge interconnects and magnetoelectric nodes
An apparatus including a spin to charge conversion node; and a charge to spin conversion node, wherein an input to the spin to charge conversion node produces...
US-1,006,2730 Light-emitting structure
Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit,...
US-1,006,2729 Light-emitting diode chip
A light-emitting diode (LED) chip includes a substrate, a light-emitting component, an electrical static discharge (ESD) protection component, and a conductive...
US-1,006,2728 Image sensor device and method
A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first ...
US-1,006,2727 Strain relieving die for curved image sensors
Techniques for fabricating a semiconductor die having a curved surface can include placing a substantially flat semiconductor die in a recess surface of a...
US-1,006,2726 Imaging device
An imaging device including a unit pixel cell including a semiconductor substrate having a surface including a first area and a second area surrounded by the...
US-1,006,2725 Image sensor with anti-blooming gate
The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer (12) and maintained...
US-1,006,2724 Image sensor and sensing pixel array for reading out charge of sensing signal and charge of reset signal of one...
A sensing pixel array used in an image sensor includes sensing pixel units each including a photodiode, a row reset transistor, a buffer transistor, and a...
US-1,006,2723 Semiconductor device including a solid state imaging device
A semiconductor device is reduced in power consumption, the semiconductor device including a solid-state imaging device that includes pixels each having a...
US-1,006,2722 Stacked image sensor with shield bumps between interconnects
An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first...
US-1,006,2721 Elevated photodiode with a stacked scheme
A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The...
US-1,006,2720 Deep trench isolation fabrication for BSI image sensor
The present disclosure relates to an integrated circuit, and an associated method of formation. In some embodiments, the integrated circuit comprises a deep...
US-1,006,2719 Solid-state imaging device, manufacturing method thereof, and camera with arranged pixel combinations alternatively
A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel...
US-1,006,2718 Imaging device
In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first...
US-1,006,2717 Semiconductor device
Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device...
US-1,006,2716 Display device
By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case...
US-1,006,2715 TFT array substrate and manufacturing method thereof
A TFT array substrate and its manufacturing method are disclosed. The TFT array substrate includes a substrate having a display area and a non-display area, and...
US-1,006,2714 FinFET device having a high germanium content fin structure and method of making same
A fin of silicon-germanium material is formed and covered with an epitaxially grown layer of silicon material. A dummy transistor gate is then formed to extend...
US-1,006,2713 Devices and methods for fully depleted silicon-on-insulator back biasing
An integrated circuit includes a first device having a first threshold voltage (Vt) adjusting implant extension region having a first conductivity type and...
US-1,006,2712 Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuit
Methods for fabricating both PD-SOI devices and FD-SOI devices on the same semiconductor substrate are provided. The methods begin with a SOI wafer having a top...
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