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Patent # Description
US-1,006,2595 Systems and methods for wafer alignment
Various embodiments of aligning wafers are described herein. In one embodiment, a photolithography system aligns a wafer by averaging individual via locations....
US-1,006,2594 End effector device
An end effector device is provided with a hand; a plurality of holding portions that are provided to the hand, and that hold a plurality of semiconductor wafers...
US-1,006,2593 Substrate processing apparatus and substrate processing method
During a teaching operation regarding a transport mechanism, a hand of the transport mechanism is moved to a tentative target position in a substrate supporter,...
US-1,006,2592 Substrate processing apparatus
A substrate processing apparatus includes a substrate retaining mechanism; a detecting unit detecting a placed state of the substrate retained by the substrate...
US-1,006,2591 Equipment platform system and wafer transfer method thereof
An equipment platform system and a wafer transfer method used to a wafer processing is provided. The equipment platform system comprises: a working platform,...
US-1,006,2590 Front opening ring pod
A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first...
US-1,006,2589 Front opening ring pod
A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first...
US-1,006,2588 Flexible support substrate for transfer of semiconductor devices
An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer...
US-1,006,2587 Pedestal with multi-zone temperature control and multiple purge capabilities
Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal....
US-1,006,2586 Chemical fluid processing apparatus and chemical fluid processing method
A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that...
US-1,006,2585 Oxygen compatible plasma source
Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber...
US-1,006,2584 Method for forming semiconductor structure
A method for forming a semiconductor structure is disclosed. The method includes the following steps. A first pattern structure and a second pattern structure...
US-1,006,2583 Microelectronics package with inductive element and magnetically enhanced mold compound component
The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for...
US-1,006,2582 Fabrication method of package having ESD and EMI preventing functions
A package having ESD (electrostatic discharge) and EMI (electromagnetic interference) preventing functions includes: a substrate unit having a ground structure...
US-1,006,2581 Methods of forming an isolation structure and methods of manufacturing a semiconductor device including the same
A method of forming an isolation structure, wherein a hard mask is formed on a first region and a second region of a substrate; the substrate is etched using...
US-1,006,2580 Etchant, etching method using same, and method for manufacturing semiconductor substrate product
Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation,...
US-1,006,2579 Selective SiN lateral recess
Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote...
US-1,006,2578 Methods for etch of metal and metal-oxide films
A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a...
US-1,006,2577 Method of fabricating III-V fin structures and semiconductor device with III-V fin structures
A method of fabricating III-V fin structures includes providing numerous fins. Then, a group III-V material layer is formed to encapsulate an upper portion of...
US-1,006,2576 Method for plasma etching a workpiece
A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step...
US-1,006,2575 Poly directional etch by oxidation
Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a...
US-1,006,2574 Wafer polishing apparatus and method
A wafer polishing apparatus capable of maintaining a drive ring in a flat state and a wafer polishing method are provided. In the wafer polishing apparatus and...
US-1,006,2573 Embedded SONOS with triple gate oxide and manufacturing method of the same
A method to integrate silicon-oxide-nitride-oxide-silicon (SONOS) transistors into a complementary metal-oxide-semiconductor (CMOS) flow including a triple gate...
US-1,006,2572 Semiconductor structure and fabrication method thereof
A method is provided for fabricating a semiconductor structure. The method includes providing a substrate having a dielectric layer formed on the substrate,...
US-1,006,2571 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first...
US-1,006,2570 Semiconductor device and method for manufacturing the same
An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for...
US-1,006,2569 Epitaxial wafer manufacturing method and epitaxial wafer
Provided is a method of manufacturing an epitaxial wafer having an excellent gettering capability while suppressing formation of epitaxial defects. The method...
US-1,006,2568 Chemical vapor deposition method for fabricating two-dimensional materials
A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe.sub.2 and MoSe.sub.2, is based on a chemical vapor deposition approach that...
US-1,006,2567 Reducing autodoping of III-V semiconductors by atomic layer epitaxy (ALE)
In one aspect, a method for forming a doped III-V semiconductor material on a substrate includes the steps of: (a) forming a first monolayer on the substrate,...
US-1,006,2566 Semiconductor device, display substrate, display device, and method for manufacturing polysilicon film
A semiconductor device, comprising a base substrate, a buffer layer and a polysilicon layer film, wherein the base substrate, the buffer layer and the...
US-1,006,2565 Nitride semiconductor element and nitride semiconductor package
A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device...
US-1,006,2564 Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
According to one embodiment of the invention, a method is provided for selective surface deposition. In one example, the method includes providing a substrate...
US-1,006,2563 Selective atomic layer deposition with post-dose treatment
Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are...
US-1,006,2562 Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of...
US-1,006,2561 High-pressure annealing and reducing wet etch rates
Methods are described for reducing the wet etch rate of dielectric films formed on a patterned substrate by flowing the material into gaps during deposition....
US-1,006,2560 Method of cleaning semiconductor device
Aspects of the present disclosure provide a method of cleaning a semiconductor device. The method includes providing a semiconductor wafer having an exposed...
US-1,006,2559 Laser desorption electrospray ionization source
A laser desorption electrospray ionization source includes a sample platform configured to support a sample material to be analyzed, an ion transfer tube having...
US-1,006,2558 Mass spectrometer
A technique for improving the efficiency of injecting ions into the electrode unit of a funnel structure having high ion-transport efficiency is provided to...
US-1,006,2557 Mass spectrometer with interleaved acquisition
A method of mass spectrometry is disclosed comprising passing ions through a first stage and a second stage of a mass spectrometer and monitoring a first ion...
US-1,006,2556 Electron induced dissociation devices and methods
A method and apparatus for conducting reactions between precursor ions and reagent ions, for example, a reaction between a precursor cation and an electron,...
US-1,006,2555 Digital electron amplifier with anode readout devices and methods of fabrication
Scalable electron amplifier devices and methods of fabricating the devices an atomic layer deposition ("ALD") fabrication process are described. The ALD...
US-1,006,2554 Metamaterial photocathode for detection and imaging of infrared radiation
Exemplary metamaterial photocathodes enable detection of light from visible through long wave infrared wavelengths. Metamaterial stacks, comprising gold,...
US-1,006,2553 Sputtering apparatus and processing apparatus
A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a...
US-1,006,2552 Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm...
US-1,006,2551 Sputtering apparatus and substrate processing apparatus
A sputtering apparatus includes a chamber, a substrate holder, first to fourth target holders, a shutter unit, and a gate valve through which the substrate is...
US-1,006,2550 Substrate processing apparatus
Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a...
US-1,006,2548 Gas injection system for ion beam device
A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for...
US-1,006,2547 Plasma processing apparatus
In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which...
US-1,006,2546 Sample holder and focused-ion-beam machining device provided therewith
To realize a focused-ion-beam machining apparatus capable of machining a thin sample with a wide area and a uniform film thickness and a needle-like sample with...
US-1,006,2545 Apparatus and method for processing substrate using ion beam
A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder...
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