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Patent # Description
US-1,006,9046 Bluish green phosphor and light emitting device package including the same
Embodiments of the present invention provide a bluish green phosphor represented by Formula 1 below. In particular, the bluish green phosphor and a light...
US-1,006,9045 Method of manufacturing light emitting device
A method of manufacturing a light emitting device including: forming a supporting body on a mounting surface of each of semiconductor light emitting elements;...
US-1,006,9044 Microcapsular quantum dot-polymer composite, method for producing the composite, optical elements, and method...
There are provided a microcapsular quantum dot-polymer composite, a method for producing the composite, optical elements, and a method for producing the optical...
US-1,006,9043 LED light emitting device for display device, and display device
Some embodiments of the disclosure provide an LED light emitting device for a display device, and a display device, relate to the field of display technologies....
US-1,006,9042 Light-emitting components containing body, manufacturing method of light-emitting components containing body,...
A light-emitting components containing body includes plural light-emitting components, a containing body which contains the plural light-emitting components....
US-1,006,9041 Display apparatus and manufacturing method thereof
A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed...
US-1,006,9040 Light emitting diode and method of fabricating the same
Exemplary embodiments provide a light emitting diode that includes: at least one lower electrode providing a passage for electric current; a light emitting...
US-1,006,9039 Light-emitting device
The present invention provides a light-emitting device suppressing the reduction in the light output while improving the response speed. As shown in FIG. 1, the...
US-1,006,9037 Light-emitting device and manufacturing method thereof
A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein...
US-1,006,9036 Resonant optical cavity light emitting device
Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a...
US-1,006,9035 Light-emitting device and lighting system
One embodiment relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system....
US-1,006,9034 Optoelectronic device with modulation doping
An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type...
US-1,006,9033 Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method
There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with...
US-1,006,9032 Method of forming an infrared photodetector
A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity...
US-1,006,9031 Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing...
One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a...
US-1,006,9030 Load lock solar cell transfer system
Systems and methods for transferring solar cells while maintaining a controlled micro-environment are provided. In particular, such systems provide automated...
US-1,006,9029 Transfer-printed photonics
A device such as a photo sensor, an optical isolator, and an optical damper is formed via a first process. The device is transfer printed to a waveguide of a...
US-1,006,9028 Multi-wavelength detector array incorporating two dimensional and one dimensional materials
A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and...
US-1,006,9027 Cytometer sperm sex sensing apparatus with an avalanche photodiode
A cytometer includes an avalanche photodiode, a switching power supply, a filter, and voltage adjustment circuitry. The switching power supply includes a...
US-1,006,9026 Reduced band gap absorber for solar cells
Methods and apparatuses for a dual heterojunction multijunction solar cell are disclosed. A method in accordance with the present invention comprises growing a...
US-1,006,9025 Optoelectronic device
The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one...
US-1,006,9024 Photoconductive antenna
A PCA is provided including: a semiconductor substrate; a metallic antenna, formed on one surface of the semiconductor substrate; and a first pattern structure,...
US-1,006,9023 Optical sensor with integrated pinhole
An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the...
US-1,006,9022 Solar cell and method for manufacturing same
The present invention comprises: a supporting substrate; a rear electrode layer disposed on the supporting substrate; a light absorption layer disposed on the...
US-1,006,9021 Electro-conductive pastes with salts with an anion consisting of halogen and oxygen in solar cell applications
In general, the present invention relates to electro-conductive pastes with salt additives with anions consisting of halogen and oxygen, and solar cells with...
US-1,006,9020 Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste...
US-1,006,9019 Solar cell unit, solar cell array, solar cell module and manufacturing method thereof
A solar cell unit comprises a cell. The cell includes a cell substrate and a plurality of secondary grid lines disposed on a front surface of the cell...
US-1,006,9018 Camera assembly with embedded components and redistribution layer interconnects
Systems and methods of manufacturing compact camera assemblies for use in electronic device are provided. The camera assemblies include an image sensor and a...
US-1,006,9017 Diode
A diode includes an n type semiconductor layer including an n type cathode layer and an n type drift layer that has an impurity concentration lower than the n...
US-1,006,9016 Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity...
A semiconductor diode includes a semiconductor body and trench structures extending from a surface of the semiconductor body into the semiconductor body. The...
US-1,006,9015 Width adjustment of stacked nanowires
In one aspect, a method of forming a semiconductor device includes the steps of: forming an alternating series of sacrificial/active layers on a wafer and...
US-1,006,9014 Semiconductor device and manufacturing method thereof
A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is...
US-1,006,9013 Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a...
US-1,006,9012 Pixel array substrate
A pixel array substrate including a substrate having at least one via, at least one conductor disposed in the at least one via, pixel units, scan lines...
US-1,006,9011 Method for fabricating a FinFET metallization architecture using a self-aligned contact etch
A method of fabricating a FinFET device includes a self-aligned contact etch where a source/drain contact module is performed prior to a replacement metal gate...
US-1,006,9010 Semiconductor device having compressively strained channel region and method of making same
A semiconductor device and method making it utilize a three-dimensional channel region comprising a core of a first semiconductor material and an epitaxial...
US-1,006,9009 Method for forming recess within epitaxial layer
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first recess adjacent to two sides of...
US-1,006,9008 Vertical transistor pass gate device
A semiconductor device including a fin structure present on a supporting substrate to provide a vertically orientated channel region. A first source/drain...
US-1,006,9007 Vertical FETs with high density capacitor
A technique relates to semiconductors. A bottom terminal of a transistor and bottom plate of a capacitor are positioned on the substrate. A spacer is arranged...
US-1,006,9006 Semiconductor device with vertical field floating rings and methods of fabrication thereof
A semiconductor device includes a semiconductor substrate having a first conductivity type. A gate structure is supported by a surface of the semiconductor...
US-1,006,9005 Termination design for high voltage device
The present disclosure describes a termination structure for a high voltage semiconductor transistor device. The termination structure is composed of at least...
US-1,006,9004 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device of an embodiment includes a p.sup.+-type region selectively disposed in a surface of an n-type silicon carbide epitaxial layer disposed...
US-1,006,9003 MOSFET
When a channel formation region is formed of GaN in a MOSFET, there are cases where the actual threshold voltage (V.sub.th) is lower than the setting value...
US-1,006,9002 Bond-over-active circuity gallium nitride devices
Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring;...
US-1,006,9001 Power component protected against overheating
A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first...
US-1,006,9000 Bipolar non-punch-through power semiconductor device
The invention relates to a bipolar non-punch-through power semiconductor device and a corresponding manufacturing method. The device comprises a semiconductor...
US-1,006,8999 Vertical power component
A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity...
US-1,006,8998 Semiconductor device and method of producing the same
A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by...
US-1,006,8997 SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer
A thin Ge layer is formed between an SiGe intrinsic base and single-crystal Si extrinsic base structures to greatly simplify the fabrication of raised-base SiGe...
US-1,006,8996 Array substrate, fabrication method, and display panel
An array substrate, a fabrication method thereof, and a display panel are provided. The array substrate comprises a substrate, and a plurality of ...
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