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Patent # Description
US-1,007,4740 Semiconductor device
To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain...
US-1,007,4739 Semiconductor device having electric field near drain electrode alleviated
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer containing aluminum located on the first nitride...
US-1,007,4737 Flexible device including two-dimensional material and method of manufacturing the same
A method of manufacturing a flexible device including a two-dimensional (2D) material, e.g., graphene, includes forming a dielectric layer on a first substrate,...
US-1,007,4736 Semiconductor device
According to one embodiment, a semiconductor device includes a semiconductor layer, an electrode, and an insulating portion. The semiconductor layer has a first...
US-1,007,4735 Surface devices within a vertical power device
A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises...
US-1,007,4734 Germanium lateral bipolar transistor with silicon passivation
Semiconductor structure including germanium-on-insulator lateral bipolar junction transistors and methods of fabricating the same generally include formation of...
US-1,007,4733 Semiconductor device and method for manufacturing semiconductor device
A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first...
US-1,007,4732 Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages
One illustrative method disclosed herein includes, among other things, forming first and second fins for a short channel FinFET device ("SCD") and a long...
US-1,007,4730 Forming stacked nanowire semiconductor device
A semiconductor device comprises a nanowire arranged over a substrate, a gate stack arranged around the nanowire, a spacer arranged along a sidewall of the gate...
US-1,007,4729 Forming highly conductive source/drain contacts in III-Nitride transistors
In one embodiment, a method for fabricating a III-Nitride transistor on a III-Nitride semiconductor body is disclosed. The method comprises etching dielectric...
US-1,007,4728 Semiconductor device
A semiconductor device comprises: a gate insulating film 190 stacked on a semiconductor layer 130; and a gate electrode layer 230 stacked on the gate insulating...
US-1,007,4727 Low resistivity wrap-around contacts
Low resistivity, wrap-around contact structures are provided in nanosheet devices, vertical FETs, and FinFETs. Such contact structures are obtained by...
US-1,007,4726 Fin semiconductor device including dummy gate on isolation layer
A semiconductor device and a method of manufacturing a semiconductor device, the device including an active fin protruding from a substrate and extending in a...
US-1,007,4725 Semiconductor structure and manufacturing method thereof
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a...
US-1,007,4724 Apparatus including gettering agents in memory charge storage structures
Apparatus having a processor and a memory device in communication with the processor, the memory device including an array of memory cells and a control logic...
US-1,007,4723 Field plate trench FET and a semiconductor component
A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and...
US-1,007,4722 Transistor, thin-film transistor substrate, and liquid crystal display
The present technique relates to a transistor that uses an oxide semiconductor as its channel layer and that is capable of suppressing fluctuations in threshold...
US-1,007,4721 Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa...
In an embodiment, a method of planarizing a surface includes applying a first layer to a surface including a protruding region such that the first layer covers...
US-1,007,4720 Digital alloy vertical lamellae finfet with current flow in alloy layer direction
After forming semiconductor fins including vertically oriented alternating first digital alloy sublayer portions comprised of SiGe and second digital alloy...
US-1,007,4719 Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed...
The present application discloses a semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate. The IGBT region...
US-1,007,4718 Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
Non-planar semiconductor devices having group III-V material active regions with multi-dielectric gate stacks are described. For example, a semiconductor device...
US-1,007,4717 Semiconductor devices and methods of manufacturing the same
A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation...
US-1,007,4716 Saucer-shaped isolation structures for semiconductor devices
An isolation structure formed in a semiconductor substrate of a first conductivity type includes a region of a second conductivity type opposite to the first...
US-1,007,4715 Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor device
A method for forming a semiconductor device includes determining at least one electrical parameter for each semiconductor device of a plurality of semiconductor...
US-1,007,4713 Signal isolator integrated circuit package
A signal isolator integrated circuit package includes a first die in a first voltage domain and a second die in a second voltage domain. The integrated circuit...
US-1,007,4712 Display device
A display device includes, on a substrate, light emitting elements each formed by sequentially stacking a first electrode layer, an organic layer including a...
US-1,007,4711 AMOLED display device
The present invention provides an AMOLED display device, which includes a cathode connection layer formed on a backing plate and provides connection between the...
US-1,007,4710 Organic light emitting diode display
An organic light emitting diode display includes a substrate, a plurality of pixels disposed on the substrate, and a plurality of transmitting windows...
US-1,007,4709 Display device
A display device includes a driving transistor and an organic EL element. The driving transistor includes an oxide semiconductor layer; a first gate electrode...
US-1,007,4708 Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a...
A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer...
US-1,007,4707 Thin film transistor array for organic light-emitting display
A thin-film transistor array substrate includes a substrate; a first active layer of a first transistor, which is on the substrate and includes a source region,...
US-1,007,4706 Organic light emitting diode display
An organic light emitting diode display includes a substrate, a semiconductor disposed on the substrate that includes a channel for each of a plurality of...
US-1,007,4705 Transparent display device and method of manufacturing a transparent display device
In a method of manufacturing a transparent display device, a substrate including a pixel region and a transmission region may be provided. A first electrode may...
US-1,007,4704 Organic light-emitting display apparatus
An organic light-emitting display apparatus includes: a first substrate; an insulating layer on the first substrate; a signal wiring on the insulating layer; an...
US-1,007,4703 Light-emitting device and method for fabricating the same
To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to...
US-1,007,4702 Organic light emitting diode display panel
An organic light emitting diode display panel is disclosed, which comprises: a substrate having a light emitting region and a non-light emitting region, wherein...
US-1,007,4701 Foldable, flexible display apparatus and method of manufacturing the same
A foldable, flexible display apparatus includes a flexible display panel which displays an image and includes a display side on which the image is displayed and...
US-1,007,4700 Display device and head mounted display device
A display device includes a low-definition display section and a high-definition display section. An area of pixels of the high-definition display section is...
US-1,007,4698 Display substrate, display device thereof, and manufacturing method therefor
A display substrate, an Organic Light Emitting Diode (OLED) display device and a manufacturing method for the display substrate. The display substrate includes...
US-1,007,4697 Solid-state image pickup unit and electronic apparatus
A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion...
US-1,007,4696 Imaging device, manufacturing device, and manufacturing method
The present technology relates to an imaging device, a manufacturing device, and a manufacturing method capable of preventing a substance such as hydrogen from...
US-1,007,4695 Negative differential resistance (NDR) device based on fast diffusive metal atoms
A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a...
US-1,007,4694 Memory device and method for manufacturing the same
According to one embodiment, a memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction crossing...
US-1,007,4693 Connections for memory electrode lines
Subject matter disclosed herein relates to an integrated circuit device having a socket interconnect region for connecting a plurality of conductive lines at a...
US-1,007,4692 Resistive memory and method for manufacturing the same
A semiconductor structure includes a memory unit structure. The memory unit structure includes a transistor, a first electrode, two second electrode, and two...
US-1,007,4691 Display panel
In a display panel, a first substrate has an active area and a peripheral area outside the active area. A plurality of first traces are located at the...
US-1,007,4690 Semiconductor device and method of manufacturing the same
A semiconductor device including: a first member including a selection transistor on a front surface side of a first substrate; and a second member including a...
US-1,007,4688 Magnetoresistive effect device with first and second magnetoresistive effect elements having opposite current...
A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a...
US-1,007,4687 Semiconductor device and electronic device
A semiconductor device including pixels arranged in a matrix of n rows and m columns, in which the pixels in the m-th column are shielded from light, is provided.
US-1,007,4686 Method of manufacturing semiconductor unit and the semiconductor unit
In a solid-state imaging device including a plurality of pixels each pixel including a plurality of photodiodes, it is prevented that an incidence angle of...
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