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Patent # Description
US-1,012,1941 Light source device
A light source device having: a blue light emitting element that emits blue light having an emission peak in a wavelength region of 440 nm to 460 nm; a green...
US-1,012,1940 Vehicle lamp using semiconductor light emitting device
Disclosed is a semiconductor light emitting device, wherein the semiconductor light emitting device includes: a first conductive electrode and a second...
US-1,012,1939 Semiconductor light-emitting devices and methods of manufacturing the same
A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an...
US-1,012,1938 Light source module
A light source module is provided. The light source module includes a flexible printed circuit board, plural light-emitting diodes and plural first...
US-1,012,1937 Light extraction using feature size and shape control in LED surface roughening
The structural characteristics of the light-exiting surface of a light emitting device are controlled so as to increase the light extraction efficiency of that...
US-1,012,1936 Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer
An optoelectronic semiconductor chip including a multi-quantum well including at least one high barrier layer is disclosed. In an embodiment, the chip includes...
US-1,012,1935 Three-dimensional semiconductor nanoheterostructure and method of making same
A method for fabrication of three-dimensional nanostructures on top of the surface of a first solid state material is disclosed, which includes steps of (i)...
US-1,012,1934 Method for manufacturing semiconductor light emitting device package
There is provided a method for manufacturing a semiconductor light emitting device package including steps of disposing a plurality of light emitting structures...
US-1,012,1933 Semiconductor device and the manufacturing method thereof
The present disclosure discloses a method forming a semiconductor light-emitting unit, comprising the steps of providing a semiconductor substrate; epitaxially...
US-1,012,1932 Tunable graphene light-emitting device
A device includes a substrate with a tunnel barrier disposed on active region defined on the substrate, a monolayer of graphene disposed on the tunnel barrier,...
US-1,012,1931 Film formation device
The present invention includes a mist generator that generates a mist of a raw material of a film to be formed, and a mist jet nozzle that jets the mist...
US-1,012,1930 Light receiving and emitting element module and sensor device using same
A light receiving and emitting element module includes a substrate; a light emitting element and a light receiving element on an upper surface of the substrate;...
US-1,012,1928 Semiconductor photomultiplier and a process of manufacturing a photomultiplier microcell
The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active...
US-1,012,1927 Semiconductor device and method of manufacturing the same
A provided semiconductor device includes a Ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a...
US-1,012,1926 Graphene-based detector for W-band and terahertz radiations
A method for detecting W-band and terahertz radiations is disclosed. The method provides a graphene-Si Schottky diode that includes a graphene monolayer having...
US-1,012,1925 Thin film photovoltaic devices with microlens arrays
Textured transparent layers are formed on the incident light receiving surface of thin film solar cells to increase their efficiency by altering the incident...
US-1,012,1924 Solar cell having rear buffer layer and method of manufacturing the same
The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption...
US-1,012,1923 Laminate and thin-film solar cell comprising same
The present invention relates to a laminate including an alkali metal-doped layer. The laminate is processable at high temperatures of at least 550.degree. C....
US-1,012,1922 Tunneling barrier infrared detector devices
Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector...
US-1,012,1921 Tunneling barrier infrared detector devices
Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector...
US-1,012,1920 Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
A photovoltaic device includes a substrate, a first electrode formed on the substrate and a p-type absorber layer including a chalcogenide compound. An n-type...
US-1,012,1919 Control of surface properties by deposition of particle monolayers
The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic...
US-1,012,1918 Optical module for preventing cross talk due to undesirable refection light, manufacturing process thereof and...
The present disclosure relates to an optical module. In an embodiment, the optical module includes a carrier, a light source, a light detector, and a first...
US-1,012,1917 Solar cell and solar cell module
A solar cell includes: a base substrate that has a principle surface; a first semiconductor layer provided in a first region on the principle surface; a second...
US-1,012,1916 Solar cell
A solar cell according to an embodiment comprises: a support substrate; a rear electrode layer formed on the support substrate; a first through groove formed on...
US-1,012,1915 Solar cell and manufacturing method thereof
A method for manufacturing a solar cell includes forming a passivation layer on a rear surface of a substrate of a first conductivity type; forming connecting...
US-1,012,1914 Back-illuminated sensor with boron layer
An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from...
US-1,012,1913 Solar photovoltaic module safety shutdown system
A solar photovoltaic module safety shutdown system includes a module-on switch coupled with a first circuit having a photovoltaic module and a System-Monitor...
US-1,012,1912 High density capacitor integrated into focal plane array processing flow
Methods and structures of photodetectors are described. The structure may include a readout integrated circuit substrate having an internally integrated...
US-1,012,1911 Photovoltaic device assembly and method
The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV arrays and/or locate these...
US-1,012,1910 Formed photovoltaic module busbars
A photovoltaic system including a cell connection piece coupled to a plurality of photovoltaic cells and a terminal of a junction box. The cell connection piece...
US-1,012,1909 Power semiconductor rectifier with controllable on-state voltage
It is the object of the invention to provide a power semiconductor rectifier with a low on-state-voltage and high blocking capability. The object is attained by...
US-1,012,1908 High withstand voltage diode and power conversion device
It is an object of the present invention to provide a semiconductor device capable of adjusting a V.sub.F-E.sub.REC trade-off characteristic without a life-time...
US-1,012,1907 Planar triple-implanted JFET
A JFET is formed with vertical and horizontal elements made from a high band-gap semiconductor material such as silicon carbide via triple implantation of a...
US-1,012,1906 Vertical memory strings, and vertically-stacked structures
Some embodiments include methods of forming vertical memory strings. A trench is formed to extend through a stack of alternating electrically conductive levels...
US-1,012,1905 Semiconductor device
Provided is a semiconductor device including a transistor in which a first gate and a second gate are provided with a channel formation region provided...
US-1,012,1904 Semiconductor device
An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved...
US-1,012,1903 Semiconductor device
A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable...
US-1,012,1902 Semiconductor integrated circuit device including nano-wire selector and method of manufacturing the same
In a method of manufacturing a semiconductor integrated circuit device, an active region including a nano-wire may be formed on a bulk insulating layer. A hard...
US-1,012,1901 Pixel structure with isolator and method for fabricating the same
A pixel structure including an active device, a first protection layer, a first electrode, an isolator, a second protection layer and a second electrode is...
US-1,012,1900 Thin-film transistor, liquid crystal display panel, and thin-film transistor manufacturing method
A thin-film transistor, a liquid crystal display panel, and a thin-film transistor manufacturing method are provided. The thin-film transistor includes a base...
US-1,012,1899 Thin film transistor substrate and display using the same
A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the...
US-1,012,1898 Thin-film transistor substrate and method of manufacturing the same
A method of manufacturing a TFT substrate includes the steps of forming an oxide semiconductor layer above a substrate, forming a first oxide film on the oxide...
US-1,012,1897 Field effect transistor with narrow bandgap source and drain regions and method of fabrication
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer...
US-1,012,1896 FinFet with heterojunction and improved channel control
Roughly described, a computer program product describes a transistor with a fin, a fin support, a gate, and a gate dielectric. The fin includes a first...
US-1,012,1895 Method for producing semiconductor device and semiconductor device
A semiconductor device having a memory cell includes: a first gate electrode formed on a semiconductor substrate via a first insulating film; a second gate...
US-1,012,1894 Semiconductor device and method of manufacturing the same
In an LDMOS having an element isolation region of an STI structure, there is prevented an occurrence of insulation breakdown which might be caused when...
US-1,012,1893 Integrated circuit structure without gate contact and method of forming same
One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a gate structure between a pair of gate...
US-1,012,1892 Semiconductor device
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the...
US-1,012,1891 P-N bimodal transistors
RESURF-based dual-gate p-n bimodal conduction laterally diffused metal oxide semiconductors (LDMOS). In an illustrative embodiment, a p-type source is...
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