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Patent # Description
US-1,012,1686 Vacuum processing apparatus
The present invention provides a vacuum processing apparatus that includes gas supply means having a hard interlock of a pair of gas valves. The present...
US-1,012,1685 Treatment solution supply method, non-transitory computer-readable storage medium, and treatment solution...
A treatment solution supply method includes: a degassed treatment solution generating step of degassing a treatment solution by a degassing mechanism to...
US-1,012,1684 Manufacturing method, pickup method, equipment and EMI (electromagnetic interference) electromagnetic shielding...
The invention discloses, pickup method, equipment and EMI electromagnetic shielding layer manufacturing method of SiP module. The method for picking up the SiP...
US-1,012,1683 Light-irradiation heat treatment method and heat treatment apparatus
Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer,...
US-1,012,1682 Purging of porogen from UV cure chamber
A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall...
US-1,012,1681 Semiconductor processing device
Embodiments of a semiconductor processing apparatus are disclosed. The semiconductor processing apparatus includes a micro chamber for tightly accommodating and...
US-1,012,1680 Substrate processing apparatus
In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas...
US-1,012,1679 Package substrate first-level-interconnect architecture
Embodiments of the present disclosure may relate to a package substrate that may include a layer having a layer surface that is planarized and a via within the...
US-1,012,1678 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming a reference pattern in an inspection pattern formation region, forming a first mask layer over...
US-1,012,1677 Manufacturing method of semiconductor device
In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on the...
US-1,012,1676 Interconnects fabricated by hydrofluorocarbon gas-assisted plasma etch
In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and...
US-1,012,1675 Semiconductor device and a method for fabricating the same
In a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure...
US-1,012,1674 Method for etching silicon layer and plasma processing apparatus
Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the...
US-1,012,1673 Miniaturize particulate matter detector and manufacturing method of a filter
In an embodiment, a miniaturize particulate matter detector includes a filter having a plurality of holes, and a concentration detector correspondingly disposed...
US-1,012,1672 Cutting method for cutting processing-target object and cutting apparatus that cuts processing-target object
There is provided a cutting method for cutting a processing-target object by a cutting blade. The cutting method includes a holding step of holding the...
US-1,012,1670 Methods of fabricating semiconductor structures
Methods of fabricating a semiconductor structure comprise forming an opening through a stack of alternating tier dielectric materials and tier control gate...
US-1,012,1669 Flash memory fabrication method
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate comprising an active...
US-1,012,1668 Method of forming closed cell lateral MOSFET using silicide source
A closed cell lateral MOSFET device includes minimally sized source/body contacts formed in source cells with silicided source and body diffusion regions formed...
US-1,012,1667 Creation of hyperdoped semiconductors with concurrent high crystallinity and high sub-bandgap absorptance using...
In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so...
US-1,012,1666 Ion implantation method and ion implantation apparatus
An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the...
US-1,012,1665 Short-channel NFET device
A semiconductor device has an active region that includes a semiconductor layer. A transistor is formed in and above the active region, wherein the transistor...
US-1,012,1664 Dopant introduction method and heat treatment method
A thin film containing a dopant is deposited on a surface of a semiconductor wafer. The semiconductor wafer on which the thin film containing the dopant is...
US-1,012,1663 Semiconductor device and method for producing same
A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including...
US-1,012,1662 Methods of forming structures and methods of decreasing defect density
A method of forming a structure comprises forming a pattern of self-assembled nucleic acids over a material. The pattern of self-assembled nucleic acids is...
US-1,012,1661 Self aligned pattern formation post spacer etchback in tight pitch configurations
A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming...
US-1,012,1660 Method for fabricating semiconductor device
A method of fabricating a semiconductor device includes forming a metal film including Cu on a substrate, forming a protective film on the metal film, forming a...
US-1,012,1659 Pattern forming method and heating apparatus
The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the...
US-1,012,1658 Method of fabricating black phosphorus ultrathin film and black phosphorus ultrathin film thereof
The present invention relates to a method of fabricating a black phosphorus thin film and a black phosphorus thin film thereof and, more particularly, to a...
US-1,012,1657 Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a...
US-1,012,1656 Buffer layers having composite structures
Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a...
US-1,012,1655 Lateral plasma/radical source
Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face...
US-1,012,1654 Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium
There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof;...
US-1,012,1653 Bottom-up PEALD proces
The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The...
US-1,012,1652 Formation of metal oxide layer
A method for forming a metal oxide layer on a wafer. In some embodiments, the method includes forming a layer of a metal oxyhalide on a wafer followed by an...
US-1,012,1651 Method of manufacturing semiconductor device
A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing...
US-1,012,1650 Method of manufacturing semiconductor device
A technique capable of forming a film at the bottom of a deep hole having a high aspect ratio. A method of manufacturing a semiconductor device, including: (a)...
US-1,012,1649 Cleaning method of semiconductor wafer
A wax removal method uniformly removes wax adhering to a wafer surface and reduces the problems of re-adhesion of particles and filter clogging of a cleaning...
US-1,012,1648 Substrate processing method and substrate processing apparatus
A maximum height, that corresponds to a width of a pattern formed on a front surface of a substrate to be processed, is searched among a plurality of maximum...
US-1,012,1647 Method for removing adhering matter and dry etching method
An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an...
US-1,012,1646 Substrate processing apparatus and substrate processing method
In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the...
US-1,012,1645 Sheathless interface for capillary electrophoresis/electrospray ionization-mass spectrometry
Provided herein are capillaries for use in an electrophoretic separations. The capillaries can comprise an elongated tubular wall defining a path for fluid flow...
US-1,012,1644 Mass spectrometer and mass spectrometry method
A mass spectrometer including an ionization source including an ESI probe (201), an ESI power source (24), a corona needle (202) and an APCI power source (24);...
US-1,012,1643 Chromatography/mass spectrometry data processing device
Using the intensity ratio of peaks on a standard mass spectrum of the target compound and peaks with the same m/z on the measured mass spectrum near the...
US-1,012,1642 Digital electron amplifier with anode readout devices and methods of fabrication
Scalable electron amplifier devices and methods of fabricating the devices an atomic layer deposition ("ALD") fabrication process are described. The ALD...
US-1,012,1641 Large dynamic range RF voltage sensor and method for voltage mode RF bias application of plasma processing systems
A voltage sensor of a substrate processing system including a multi-divider circuit, a clamping circuit and first and second outputs. The multi-divider circuit...
US-1,012,1640 Method and apparatus for plasma processing
The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is...
US-1,012,1639 Mixed mode pulsing etching in plasma processing systems
A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the...
US-1,012,1638 Atmospheric-pressure plasma jet generating device
An atmospheric-pressure plasma jet generating device is disclosed, which comprises a housing, a discharge tube, an air inlet, and an outlet. The air inlet is...
US-1,012,1637 Multi-platen ion implanter and method for implanting multiple substrates simultaneously
An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on...
US-1,012,1636 Systems and methods for using multimodal imaging to determine structure and atomic composition of specimens
An imaging system that selectively alternates a first, non-destructive imaging mode and a second, destructive imaging mode to analyze a specimen so as to...
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